An AlN/Al0.85Ga0.15N high electron mobility transistor von Baca, Albert G., Armstrong, Andrew M., Allerman, Andrew A., Douglas, Erica A., Sanchez, Carlos A., King, Michael P., Coltrin, Michael E., Fortune, Torben R., Kaplar, Robert J.

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Polarization-induced electrical conductivity in ultra-wide band gap AlGaN alloys von Armstrong, Andrew M., Allerman, Andrew A.

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Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs von Zhang, Yuewei, Krishnamoorthy, Sriram, Akyol, Fatih, Johnson, Jared M., Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., Hwang, Jinwoo, Rajan, Siddharth

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Tunnel-injected sub-260 nm ultraviolet light emitting diodes von Zhang, Yuewei, Krishnamoorthy, Sriram, Akyol, Fatih, Bajaj, Sanyam, Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., Rajan, Siddharth

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Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions von Zhang, Yuewei, Krishnamoorthy, Sriram, Akyol, Fatih, Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., Rajan, Siddharth

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Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers von Armstrong, Andrew M., Bryant, Benjamin N., Crawford, Mary H., Koleske, Daniel D., Lee, Stephen R., Wierer, Jonathan J.

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Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes von Zhang, Yuewei, Krishnamoorthy, Sriram, Akyol, Fatih, Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., Rajan, Siddharth

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Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al0.7Ga0.3N von Armstrong, Andrew M., Moseley, Michael W., Allerman, Andrew A., Crawford, Mary H., Wierer, Jonathan J.

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Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors von Carey, Patrick H., Pearton, Stephen J., Ren, Fan, Baca, Albert G., Klein, Brianna A., Allerman, Andrew A., Armstrong, Andrew M., Douglas, Erica A., Kaplar, Robert J., Kotula, Paul G.

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Ultra-wide band gap AlGaN polarization-doped field effect transistor von Armstrong, Andrew M., Klein, Brianna A., Colon, Albert, Allerman, Andrew A., Douglas, Erica A., Baca, Albert G., Fortune, Torben R., Abate, Vincent M., Bajaj, Sanyam, Rajan, Siddharth

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High-frequency, high-power performance of AlGaN-channel high-electron-mobility transistors: an RF simulation study von Reza, Shahed, Klein, Brianna A., Baca, Albert. G., Armstrong, Andrew M., Allerman, Andrew A., Douglas, Erica. A., Kaplar, Robert J.

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Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors von Carey, Patrick H., Pearton, Stephen J., Ren, Fan, Baca, Albert G., Klein, Brianna A., Allerman, Andrew A., Armstrong, Andrew M., Douglas, Erica A., Kaplar, Robert J., Kotula, Paul G.

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Influence of trap-assisted and intrinsic Auger–Meitner recombination on efficiency droop in green InGaN/GaN LEDs von Li, Xuefeng, DeJong, Elizabeth, Armitage, Rob, Armstrong, Andrew M., Feezell, Daniel

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Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes von Armstrong, Andrew M., Crawford, Mary H., Jayawardena, Asanka, Ahyi, Ayayi, Dhar, Sarit

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Etched-and-Regrown GaN pn-Diodes With 1600 V Blocking Voltage von Armstrong, Andrew M., Allerman, Andrew A., Pickrell, Greg W., Crawford, Mary H., Glaser, Caleb E., Smith, Trevor

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Etched-And-Regrown GaN P–N Diodes with Low-Defect Interfaces Prepared by In Situ TBCl Etching von Li, Bingjun, Wang, Sizhen, Nami, Mohsen, Armstrong, Andrew M, Han, Jung

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Al-rich AlGaN based transistors von Baca, Albert G., Armstrong, Andrew M., Klein, Brianna A., Allerman, Andrew A., Douglas, Erica A., Kaplar, Robert J.

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Defect suppression in wet-treated etched-and-regrown nonpolar m-plane GaN vertical Schottky diodes: A deep-level optical spectroscopy analysis von Aragon, Andrew, Monavarian, Morteza, Pickrell, Greg, Crawford, Mary, Allerman, Andrew, Feezell, Daniel, Armstrong, Andrew M.

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Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency von Zhang, Yuewei, Jamal-Eddine, Zane, Akyol, Fatih, Bajaj, Sanyam, Johnson, Jared M., Calderon, Gabriel, Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., Hwang, Jinwoo, Rajan, Siddharth

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Interfacial Impurities and Their Electronic Signatures in High‐Voltage Regrown Nonpolar m‐Plane GaN Vertical p–n Diodes von Aragon, Andrew, Monavarian, Morteza, Stricklin, Isaac, Pickrell, Greg, Crawford, Mary, Allerman, Andrew, Armstrong, Andrew M., Feezell, Daniel

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