Polarization-induced electrical conductivity in ultra-wide band gap AlGaN alloys von Armstrong, Andrew M., Allerman, Andrew A.

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Enhancement-mode AlGaN channel high electron mobility transistor enabled by p-AlGaN gate von Douglas, Erica A., Klein, Brianna, Allerman, Andrew A., Baca, Albert G., Fortune, Torben, Armstrong, Andrew M.

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Evolution of AlGaN deep level defects as a function of alloying and compositional grading and resultant impact on electrical conductivity von Armstrong, Andrew M., Allerman, Andrew A.

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Liquid Biopsy: It's the Bloody Truth von Hawkey, Nathan M, Armstrong, Andrew J

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An AlN/Al0.85Ga0.15N high electron mobility transistor von Baca, Albert G., Armstrong, Andrew M., Allerman, Andrew A., Douglas, Erica A., Sanchez, Carlos A., King, Michael P., Coltrin, Michael E., Fortune, Torben R., Kaplar, Robert J.

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Tunnel-injected sub-260 nm ultraviolet light emitting diodes von Zhang, Yuewei, Krishnamoorthy, Sriram, Akyol, Fatih, Bajaj, Sanyam, Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., Rajan, Siddharth

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Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs von Zhang, Yuewei, Krishnamoorthy, Sriram, Akyol, Fatih, Johnson, Jared M., Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., Hwang, Jinwoo, Rajan, Siddharth

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Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions von Zhang, Yuewei, Krishnamoorthy, Sriram, Akyol, Fatih, Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., Rajan, Siddharth

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Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers von Armstrong, Andrew M., Bryant, Benjamin N., Crawford, Mary H., Koleske, Daniel D., Lee, Stephen R., Wierer, Jonathan J.

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Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes von Zhang, Yuewei, Krishnamoorthy, Sriram, Akyol, Fatih, Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., Rajan, Siddharth

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Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al0.7Ga0.3N von Armstrong, Andrew M., Moseley, Michael W., Allerman, Andrew A., Crawford, Mary H., Wierer, Jonathan J.

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Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors von Carey, Patrick H., Pearton, Stephen J., Ren, Fan, Baca, Albert G., Klein, Brianna A., Allerman, Andrew A., Armstrong, Andrew M., Douglas, Erica A., Kaplar, Robert J., Kotula, Paul G.

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Measuring the unmeasurable: automated bone scan index as a quantitative endpoint in prostate cancer clinical trials von Mota, Jose Mauricio, Armstrong, Andrew J., Larson, Steven M., Fox, Josef J., Morris, Michael J.

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High-frequency, high-power performance of AlGaN-channel high-electron-mobility transistors: an RF simulation study von Reza, Shahed, Klein, Brianna A., Baca, Albert. G., Armstrong, Andrew M., Allerman, Andrew A., Douglas, Erica. A., Kaplar, Robert J.

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Ultra-wide band gap AlGaN polarization-doped field effect transistor von Armstrong, Andrew M., Klein, Brianna A., Colon, Albert, Allerman, Andrew A., Douglas, Erica A., Baca, Albert G., Fortune, Torben R., Abate, Vincent M., Bajaj, Sanyam, Rajan, Siddharth

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Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors von Carey, Patrick H., Pearton, Stephen J., Ren, Fan, Baca, Albert G., Klein, Brianna A., Allerman, Andrew A., Armstrong, Andrew M., Douglas, Erica A., Kaplar, Robert J., Kotula, Paul G.

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Influence of trap-assisted and intrinsic Auger–Meitner recombination on efficiency droop in green InGaN/GaN LEDs von Li, Xuefeng, DeJong, Elizabeth, Armitage, Rob, Armstrong, Andrew M., Feezell, Daniel

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Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes von Armstrong, Andrew M., Crawford, Mary H., Jayawardena, Asanka, Ahyi, Ayayi, Dhar, Sarit

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Al-rich AlGaN based transistors von Baca, Albert G., Armstrong, Andrew M., Klein, Brianna A., Allerman, Andrew A., Douglas, Erica A., Kaplar, Robert J.

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Etched-and-Regrown GaN pn-Diodes With 1600 V Blocking Voltage von Armstrong, Andrew M., Allerman, Andrew A., Pickrell, Greg W., Crawford, Mary H., Glaser, Caleb E., Smith, Trevor

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