Role of Trench Bottom Shielding Region on Switching Characteristics of 4H-SiC Double-Trench Mosfets von Kobayashi, Yusuke, Iijima, Ryosuke, Kyogoku, Shinya, Harada, Shinsuke, Tanaka, Katsuhisa, Ariyoshi, Keiko

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Self-aligned formation of the trench bottom shielding region in 4H-SiC trench gate MOSFET von Kojima, Takahito, Harada, Shinsuke, Kobayashi, Yusuke, Sometani, Mitsuru, Ariyoshi, Keiko, Senzaki, Junji, Takei, Manabu, Tanaka, Yasunori, Okumura, Hajime

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Threshold Voltage Instability of SiC-MOSFETs on Various Crystal Faces von Okumura, Hajime, Ariyoshi, Keiko, Kojima, Takahito, Senzaki, Junji, Kojima, Kazutoshi, Shimozato, Atsushi, Harada, Shinsuke, Tanaka, Yasunori

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Comparative Study of Characteristics of Lateral MOSFETs Fabricated on 4H-SiC (11-20) and (1-100) Faces von Iijima, Ryosuke, Shinohe, Takashi, Senzaki, Junji, Tanaka, Yasunori, Harada, Shinsuke, Ariyoshi, Keiko, Kojima, Takahito, Kobayashi, Yusuke

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Determination of optimum structure of 4H-SiC Trench MOSFET von Harada, S., Kato, M., Kojima, T., Ariyoshi, K., Tanaka, Y., Okumura, H.

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Nitridation Effects of Gate Oxide on Channel Properties of SiC Trench MOSFETs von Kojima, Kazutoshi, Shinohe, Takashi, Senzaki, Junji, Tanaka, Yasunori, Harada, Shinsuke, Ariyoshi, Keiko, Kojima, Takahito

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Reliability Improvement and Optimization of Trench Orientation of 4H-SiC Trench-Gate Oxide von Takei, Manabu, Okumura, Hajime, Senzaki, Junji, Tanaka, Yasunori, Harada, Shinsuke, Ariyoshi, Keiko, Yonezawa, Yoshiyuki, Kojima, Takahito

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3.3-kV-Class 4H-SiC MeV-Implanted UMOSFET With Reduced Gate Oxide Field von Harada, Shinsuke, Kobayashi, Yusuke, Ariyoshi, Keiko, Kojima, Takahito, Senzaki, Junji, Tanaka, Yasunori, Okumura, Hajime

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Gate Capacitance Reduction Due to the Inversion Layer in High- k/Metal Gate Stacks Within a Subnanometer EOT Regime von Iijima, R, Edge, L F, Ariyoshi, K, Bruley, J, Paruchuri, V, Takayanagi, M

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1200 V SiC IE-UMOSFET with low on-resistance and high threshold voltage von Harada, S., Kobayashi, Y., Kinoshita, A., Ohse, N., Kojima, T., Iwaya, M., Shiomi, H., Kitai, H., Kyogoku, S., Ariyoshi, K., Onishi, Y., Kimura, H.

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Film Structures and Electrical Properties of Pr Silicate Formed by Pulsed Laser Deposition von Ariyoshi, Keiko, Sakashita, Mitsuo, Sakai, Akira, Ogawa, Masaki, Zaima, Shigeaki

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Study on gate insulator process for reducing on-resistance in SiC trench MOSFET von Ariyoshi, Keiko

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Low Rons in 3kV 4H-SiC UMOSFET with MeV Implanted Buried P-Base Region von Shinozaki, Megumi, Sometani, Mitsuru, Senzaki, Junji, Kato, Makoto, Ariyoshi, Keiko, Okumura, Hajime, Harada, Shinsuke, Tanaka, Yasunori, Kobayashi, Yusuke, Kojima, Takahito

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3.3 kV-Class 4H-SiC UMOSFET by Double-Trench with Tilt Angle Ion Implantation von Kobayashi, Yusuke, Harada, Shinsuke, Tanaka, Yasunori, Takasu, Shinji, Senzaki, Junji, Takei, Manabu, Okumura, Hajime, Sometani, Mitsuru, Kojima, Takahito, Ishimori, Hiroshi, Ariyoshi, Keiko

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Low R sub(ons) in 3kV 4H-SiC UMOSFET with MeV Implanted Buried P-Base Region von Harada, Shinsuke, Kato, Makoto, Shinozaki, Megumi, Kobayashi, Yusuke, Ariyoshi, Keiko, Kojima, Takahito, Sometani, Mitsuru, Senzaki, Junji, Tanaka, Yasunori, Okumura, Hajime

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14.6 mΩcm2 3.3 kV DIMOSFET on 4H-SiC (000-1) von Furukawa, Masaru, Kono, Hiroshi, Ariyoshi, Keiko, Tanaka, Yasunori, Shinohe, Takashi, Suzuki, Takuma

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14.6 mohmcm super(2) 3.3 kV DIMOSFET on 4H-SiC (000-1) von Kono, Hiroshi, Furukawa, Masaru, Ariyoshi, Keiko, Suzuki, Takuma, Tanaka, Yasunori, Shinohe, Takashi

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Gate Capacitance Reduction Due to the Inversion Layer in High- [Formula Omitted]/Metal Gate Stacks Within a Subnanometer EOT Regime von Iijima, Ryosuke, Edge, Lisa F, Ariyoshi, Keiko, Bruley, John, Paruchuri, Vamsi, Takayanagi, Mariko

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Electrical Properties of MOS Structures on 4H-SiC (11-20) Face von Aryoshi, Keiko, Harada, Shinsuke, Himi, Hiroaki, Kajima, Kozutoshi, Tanaka, Yasunori, Okumura, Hajime, Kojima, Takahito, Shimozato, Atsushi, Senzaki, Junji

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Transient response characteristic of SiC-MOSFETs von Senzaki, Junji, Yoshioka, Hironori, Shimozato, Atsushi, Kobayashi, Yusuke, Ariyoshi, Keiko, Kojima, Takahito, Harada, Shinsuke, Tanaka, Yasunori, Okumura, Hajime

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