Analysis of Macrostep Formation during Top Seeded Solution Growth of 4H-SiC von Ariyawong, Kanaparin, Shin, Yun Ji, Dedulle, Jean-Marc, Chaussende, Didier

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Electromagnetic Enhancement of Carbon Transport in SiC Solution Growth Process: A Numerical Modeling Approach von Dedulle, Jean Marc, Chaussende, Didier, Ariyawong, Kanaparin

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Experimental Investigation of the Seeding Stage during SiC Solution Growth Using Si and Al-Si Solvents von Doisneau, Beatrice, Ariyawong, Kanaparin, Dedulle, Jean Marc, Shin, Yun Ji, Chaussende, Didier, Brosselard, Pierre

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Open Issues in SiC Bulk Growth von Chaussende, Didier, Sarigiannidou, Eirini, Seiss, Martin, Ouisse, Thierry, Ariyawong, Kanaparin, La Manna, Joseph, Dedulle, Jean Marc, Madar, Roland, Tsavdaris, Nikolaos, Shin, Yun Ji, Chaix-Pluchery, Odette

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A first step toward bridging silicon carbide crystal properties and physical chemistry of crystal growth von Ariyawong, Kanaparin, Chatillon, Christian, Blanquet, Elisabeth, Dedulle, Jean-Marc, Chaussende, Didier

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Macroscopic Approach to the Nucleation and Propagation of Foreign Polytype Inclusions during Seeded Sublimation Growth of Silicon Carbide von Tsavdaris, Nikolaos, Ariyawong, Kanaparin, Dedulle, Jean-Marc, Sarigiannidou, Eirini, Chaussende, Didier

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Macroscopic Approach to the Nucleation and Propagation of Foreign Polytype Inclusions during Seeded Sublimation Growth of Silicon Carbide von Tsavdaris, Nikolaos, Ariyawong, Kanaparin, Dedulle, Jean-Marc, Sarigiannidou, Eirini, Chaussende, Didier

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Assessment of SiC Crystal Chemistry during the PVT Growth Process: Coupled Numerical Modeling and Thermodynamics Approach von Dedulle, Jean Marc, Blanquet, Elisabeth, Ariyawong, Kanaparin, Chatillon, Christian, Chaussende, Didier

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Modélisation des procédes de croissance de SiC en phase gazeuse (PVT) et en phase liquide (TSSG) von Ariyawong, Kanaparin

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Nitrogen Incorporation during Seeded Sublimation Growth of 4H-SiC and 6H-SiC von Ariyawong, Kanaparin, Chaussende, Didier, Juillaguet, Sandrine, Sarigiannidou, Eirini, Peyre, Hervé, Tsavdaris, Nikolaos, Kwasnicki, Pawel, Valle, Nathalie

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Interface Shape: A Possible Cause of Polytypes Destabilization during Seeded Sublimation Growth of 15R-SiC von Dedulle, Jean Marc, Chaussende, Didier, Sarigiannidou, Eirini, Tsavdaris, Nikolaos, Chaix-Pluchery, Odette, Ariyawong, Kanaparin

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Fluorescent SiC as a new material for white LEDs von Syväjärvi, M, Müller, J, Sun, JW, Grivickas, V, Ou, Y, Jokubavicius, V, Hens, P, Kaisr, M, Ariyawong, K, Gulbinas, K, Liljedahl, R, Linnarsson, M K, Kamiyama, S, Wellmann, P, Spiecker, E, Ou, H

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Comparison of Thermodynamic Databases for the Modeling of SiC Growth by PVT von Chaussende, Didier, Ouisse, Thierry, Ariyawong, Kanaparin, Blanquet, Elisabeth, Dedulle, Jean Marc

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Step Instability in Sublimation Epitaxy on Low Off-Axis 6H-SiC von Jokubavicius, Valdas, Liljedahl, Rickard, Syväjärvi, Mikael, Ariyawong, Kanaparin

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Interaction between Vapor Species and Graphite Crucible during the Growth of SiC by PVT von Sarigiannidou, Eirini, Ariyawong, Kanaparin, Chaussende, Didier, Tsavdaris, Nikolaos, Ouisse, Thierry, Dedulle, Jean Marc

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Effect of Facet Occurrence on Polytype Destabilization during Bulk Crystal Growth of SiC by Seeded Sublimation von Chaussende, Didier, Ariyawong, Kanaparin, Dedulle, Jean Marc, Sarigiannidou, Eirini, Tsavdaris, Nikolaos, Chaix-Pluchery, Odette

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METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTALS von ARIYAWONG, Kanaparin, HSIUNG, Chih-Yung, EBNER, Robert, BARBAR, Ghassan

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APPARATUS FOR GROWING CRYSTALS, HAVING A THERMAL CASING UNIT von ARIYAWONG, Kanaparin, HSIUNG, Chih-Yung, EBNER, Robert, BARBAR, Ghassan

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APPARATUS FOR HEATING MULTIPLE CRUCIBLES von ARIYAWONG, Kanaparin, HSIUNG, Chih-Yung, EBNER, Robert, BARBAR, Ghassan

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METHOD FOR GROWING SINGLE CRYSTALS von ARIYAWONG, Kanaparin, HSIUNG, Chih-Yung, EBNER, Robert, BARBAR, Ghassan

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