Suppression of the floating-body effect in partially-depleted SOI MOSFETs with SiGe source structure and its mechanism von Nishiyama, A., Arisumi, O., Yoshimi, M.

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Suppression of the floating-body effect in SOI MOSFET's by the bandgap engineering method using a Si/sub 1-x/Ge/sub x/ source structure von Yoshimi, M., Terauchi, M., Nishiyama, A., Arisumi, O., Murakoshi, A., Matsuzawa, K., Shigyo, N., Takeno, S., Tomita, M., Suzuki, K., Ushiku, Y., Tango, H.

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FERROELECTRIC PROPERTIES OF Pb(Zr, Ti)O3 CAPACITOR WITH THIN SrRuO3 FILMS WITHIN BOTH ELECTRODES von Morimoto, T, Hidaka, O, Yamakawa, K, Arisumi, O, Kanaya, H, Iwamoto, T

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Mechanism of the suppression of the floating-body effect for SOI MOSFETs with SiGe source structure von Nishiyama, A., Arisumi, O., Yoshimi, M.

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Novel Pb(Ti, Zr)O 3 (PZT) Crystallization Technique Using Flash Lamp for Ferroelectric RAM (FeRAM) Embedded LSIs and One Transistor Type FeRAM Devices von Yamakawa, Koji, Imai, Keitaro, Arisumi, Osamu, Arikado, Tsunetoshi, Yoshioka, Masaki, Owada, Tatsushi, Okumura, Katsuya

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LEAD CONTENT CONTROL IN (Pb, La)(Zr, Ti)O3 FILMS USING Ar/O2 SEQUENTIAL RAPID THERMAL PROCESS von Arisumi, O, Nakamura, S, Moon, B-K, Yamakawa, K, Imai, K

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Lead Content Control in (Pb, La)(Zr, Ti)O 3 Films Using Ar/O 2 Sequential Rapid Thermal Process von Arisumi, Osamu, Nakamura, Shin-ichi, Moon, Bum-Ki, Yamakawa, Koji, Imai, Keitaro

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NOVEL Pb(Ti, Zr)O3(PZT) CRYSTALLIZATION TECHNIQUE USING FLASH LAMP FOR FERROELECTRIC RAM (FERAM) EMBEDDED LSIs AND ONE TRANSISTOR TYPE FERAM DEVICES von Yamakawa, K, Imai, K, Arisumi, O, Arikado, T, Yoshioka, M, Owada, T

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Formation of SiGe source/drain using Ge implantation for floating-body effect resistant SOI MOSFETs von NISHIYAMA, A, ARISUMI, O, TERAUCHI, M, TAKENO, S, SUZUKI, K, TAKAKUWA, C, YOSHIMI, M

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Suppression of the floating-body effect in SOI MOSFET' s by thebandgap engineering method using a Si(1-x)Ge(x) sourcestructure von Yoshimi, M, Terauchi, M, Nishiyama, A, Arisumi, O, Murakoshi, A, Matsuzawa, K, Shigyo, N, Takeno, S, Tomita, M, Suzuki, K, Ushiku, Y, Tango, H

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Analysis of Si-Ge source structure in 0.15 μm SOI MOSFETs using two-dimensional device simulation von ARISUMI, O, MATSUZAWA, K, SHIGYO, N, TERAUCHI, M, NISHIYAMA, A, YOSHIMI, M

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Development of stable PZT sputtering process using ex-situ crystallization and PZT/Pt interface control technique von Yamakawa, K., Arisumi, O., Okuwada, K., Tsutsumi, K., Katata, T.

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Bandgap engineering technology for suppressing the substrate-floating-effect in 0.15 /spl mu/m SOI-MOSFETs von Yoshimi, M., Nishiyama, A., Terauchi, M., Arisumi, O., Murakoshi, A., Ushiku, Y., Takeno, S., Suzuki, K.

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Mobility of Humanoid Robots: Stepping over Large Obstacles Dynamically von Verrelst, B., Yokoi, K., Stasse, O., Arisumi, H., Vanderborght, B.

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