Manganese Oxide-Surface Modified Titanium (IV) Dioxide as Environmental Catalyst von Jin, Qiliang, Arimoto, Hiroshi, Fujishima, Musashi, Tada, Hiroaki

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Effects of hydrogenation on electronic properties of P dopant near a Si surface von Park, Sung Jin, Uchida, Noriyuki, Arimoto, Hiroshi, Tada, Tetsuya

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Mechanical Stress Evaluation of Si Metal–Oxide–Semiconductor Field-Effect Transistor Structure Using Polarized Ultraviolet Raman Spectroscopy Measurements and Calibrated Technology... von Satoh, Akira, Tada, Tetsuya, Poborchii, Vladimir, Kanayama, Toshihiko, Satoh, Shigeo, Arimoto, Hiroshi

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Mechanical Stress Evaluation of Si Metal–Oxide–Semiconductor Field-Effect Transistor Structure Using Polarized Ultraviolet Raman Spectroscopy Measurements and Calibrated Technology... von Satoh, Akira, Tada, Tetsuya, Poborchii, Vladimir, Kanayama, Toshihiko, Satoh, Shigeo, Arimoto, Hiroshi

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Meta-analysis of short-term outcomes after laparoscopy-assisted distal gastrectomy von Hosono, Shunsuke, Arimoto, Yuichi, Ohtani, Hiroshi, Kanamiya, Yoshitetsu

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Full-Chip Lithography Verification for Multilayer Structure in Electron-Beam Lithography von Ogino, Kozo, Hoshino, Hiromi, Arimoto, Hiroshi, Machida, Yasuhide

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Built-in Potential Mapping of Silicon Field Effect Transistor Cross Sections by Multimode Scanning Probe Microscopy von Bolotov, Leonid, Tada, Tetsuya, Arimoto, Hiroshi, Fukuda, Koichi, Nishizawa, Masayasu, Kanayama, Toshihiko

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Highly Accurate Proximity Effect Correction for 100 kV Electron Projection Lithography von Koba, Fumihiro, Yamashita, Hiroshi, Arimoto, Hiroshi

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Study of Gate Length Dependence of Two-dimensional Carrier Profile in N-FET by Scanning Tunneling Microscopy von Fukutome, Hidenobu, Aoyama, Takayuki, Arimoto, Hiroshi

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Precise line-and-space monitoring results by ellipsometry von ARIMOTO, H

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Microprocesses and Nanotechnology

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Microprocesses and Nanotechnology FOREWORD von Nishiguchi, Katsuhiko, Akita, Seiji, Arimoto, Hiroshi, Asakawa, Koji, Furukawa, Kazuaki, Hasegawa, Yoshihiro, Ishikawa, Fumitaro, Kano, Jun, Kobayashi, Sachiko, Kondo, Daiyu, Kumagai, Shinya, Masuhara, Akito, Miura, Atsushi, Miyauchi, Akihiro, Nagahara, Seiji, Nagai, Tomoki, Nagasawa, Sumito, Okada, Susumu, Sakakibara, Makoto, Shingubara, Shoso, Sugano, Koji, Takase, Kouichi, Takigawa, Ryo, Tanaka, Hirofumi, Taniguchi, Jun, Taniguchi, Takaaki, Tsuchiya, Takashi, Yanagi, Kazuhiro, Yanagida, Takeshi

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Quantitative Evaluation of Dopant Concentration in Shallow Silicon p--n Junctions by Tunneling Current Mapping with Multimode Scanning Probe Microscopy von Bolotov, Leonid, Fukuda, Koichi, Arimoto, Hiroshi, Tada, Tetsuya, Kanayama, Toshihiko

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Characterization of Plasma Nitridation Impact on Lateral Extension Profile in 50 nm N-MOSFET by Scanning Tunneling Microscopy von Fukutome, Hidenobu, Saiki, Takashi, Hori, Mitsuaki, Tanaka, Takuji, Nakamura, Ryou, Arimoto, Hiroshi

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Numerical simulation of electron diffraction through a narrow constriction von Endoh, Akira, Sasa, Shigehiko, Arimoto, Hiroshi, Muto, Shunichi

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Evaluation of Performance of Proximity Effect Correction in Electron Projection Lithography von Osawa, Morimi, Ogino, Kozo, Hoshino, Hiromi, Machida, Yasuhide, Koba, Fumihiro, Yamashita, Hiroshi, Arimoto, Hiroshi

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Three-Dimensional Proximity Effect Correction for Multilayer Structures in Electron Beam Lithography von Ogino, Kozo, Hoshino, Hiromi, Machida, Yasuhide, Osawa, Morimi, Arimoto, Hiroshi, Maruyama, Takashi, Kawamura, Eiichi

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BORON DIFFUSION IN SiO2 INVOLVING HIGH-CONCENTRATION EFFECTS von Aoyama, T, Arimoto, H, Horiuchi, K

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Numerical study of effect of fabrication damage on carrier dynamics in MQW narrow wires von ENDOH, A, ARIMOTO, H, MUTO, S

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Direct Evaluation of Gate Line Edge Roughness Impact on Extension Profiles in Sub-50-nm n-MOSFETs von Fukutome, H., Momiyama, Y., Kubo, T., Tagawa, Y., Aoyama, T., Arimoto, H.

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