Screening and Interlayer Coupling in Multilayer Graphene Field-Effect Transistors von Sui, Yang, Appenzeller, Joerg

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Bandgap Extraction and Device Analysis of Ionic Liquid Gated WSe2 Schottky Barrier Transistors von Prakash, Abhijith, Appenzeller, Joerg

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Tunability of Short-Channel Effects in MoS2 Field-Effect Devices von Zhang, Feng, Appenzeller, Joerg

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Toward Low-Power Electronics: Tunneling Phenomena in Transition Metal Dichalcogenides von Das, Saptarshi, Prakash, Abhijith, Salazar, Ramon, Appenzeller, Joerg

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Understanding contact gating in Schottky barrier transistors from 2D channels von Prakash, Abhijith, Ilatikhameneh, Hesameddin, Wu, Peng, Appenzeller, Joerg

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Screening and interlayer coupling in multilayer MoS2 von Das, Saptarshi, Appenzeller, Joerg

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Strain Engineering for Transition Metal Dichalcogenides Based Field Effect Transistors von Shen, Tingting, Penumatcha, Ashish V, Appenzeller, Joerg

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Electric-field induced structural transition in vertical MoTe2- and Mo1–xWxTe2-based resistive memories von Zhang, Feng, Zhang, Huairuo, Krylyuk, Sergiy, Milligan, Cory A., Zhu, Yuqi, Zemlyanov, Dmitry Y., Bendersky, Leonid A., Burton, Benjamin P., Davydov, Albert V., Appenzeller, Joerg

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FETRAM. An Organic Ferroelectric Material Based Novel Random Access Memory Cell von Das, Saptarshi, Appenzeller, Joerg

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Tunneling phenomena in carbon nanotube field-effect transistors von Knoch, Joachim, Appenzeller, Joerg

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Transistors based on two-dimensional materials for future integrated circuits von Das, Saptarshi, Sebastian, Amritanand, Pop, Eric, McClellan, Connor J., Franklin, Aaron D., Grasser, Tibor, Knobloch, Theresia, Illarionov, Yury, Penumatcha, Ashish V., Appenzeller, Joerg, Chen, Zhihong, Zhu, Wenjuan, Asselberghs, Inge, Li, Lain-Jong, Avci, Uygar E., Bhat, Navakanta, Anthopoulos, Thomas D., Singh, Rajendra

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Complementary Black Phosphorus Tunneling Field-Effect Transistors von Wu, Peng, Ameen, Tarek, Zhang, Huairuo, Bendersky, Leonid A, Ilatikhameneh, Hesameddin, Klimeck, Gerhard, Rahman, Rajib, Davydov, Albert V, Appenzeller, Joerg

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Demonstration of a pseudo-magnetization based simultaneous write and read operation in a Co60Fe20B20/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 heterostructure von Shen, Tingting, Ostwal, Vaibhav, Camsari, Kerem Y., Appenzeller, Joerg

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Experimental demonstration of an on-chip p-bit core based on stochastic magnetic tunnel junctions and 2D MoS2 transistors von Daniel, John, Sun, Zheng, Zhang, Xuejian, Tan, Yuanqiu, Dilley, Neil, Chen, Zhihong, Appenzeller, Joerg

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From Charge to Spin and Spin to Charge: Stochastic Magnets for Probabilistic Switching von Camsari, Kerem Y., Debashis, Punyashloka, Ostwal, Vaibhav, Pervaiz, Ahmed Zeeshan, Shen, Tingting, Chen, Zhihong, Datta, Supriyo, Appenzeller, Joerg

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Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials von Ilatikhameneh, Hesameddin, Tan, Yaohua, Novakovic, Bozidar, Klimeck, Gerhard, Rahman, Rajib, Appenzeller, Joerg

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Toward CMOS like devices from two-dimensional channel materials von Wu, Peng, Appenzeller, Joerg

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A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations von Salazar, Ramon B., Ilatikhameneh, Hesameddin, Rahman, Rajib, Klimeck, Gerhard, Appenzeller, Joerg

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The Role of Metal−Nanotube Contact in the Performance of Carbon Nanotube Field-Effect Transistors von Chen, Zhihong, Appenzeller, Joerg, Knoch, Joachim, Lin, Yu-ming, Avouris, Phaedon

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WSe2 field effect transistors with enhanced ambipolar characteristics von Das, Saptarshi, Appenzeller, Joerg

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