Carbon Nanotubes for High-Performance Electronics-Progress and Prospect von Appenzeller, J.

Volltext

Exfoliated multilayer MoTe2 field-effect transistors von Fathipour, S., Ma, N., Hwang, W. S., Protasenko, V., Vishwanath, S., Xing, H. G., Xu, H., Jena, D., Appenzeller, J., Seabaugh, A.

Volltext

Band-to-band tunneling in carbon nanotube field-effect transistors von APPENZELLER, J, LIN, Y.-M, KNOCH, J, AVOURIS, Ph

Volltext

Ambipolar electrical transport in semiconducting single-wall carbon nanotubes von Martel, R, Derycke, V, Lavoie, C, Appenzeller, J, Chan, K K, Tersoff, J, Avouris, P

Volltext

Carbon Nanotube Inter- and Intramolecular Logic Gates von Derycke, V, Martel, R, Appenzeller, J, Avouris, Ph

Volltext

Controlling doping and carrier injection in carbon nanotube transistors von Derycke, V., Martel, R., Appenzeller, J., Avouris, Ph

Volltext

Toward Nanowire Electronics von Appenzeller, J., Knoch, J., Bjork, M.T., Riel, H., Schmid, H., Riess, W.

Volltext

Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes von Wind, S. J., Appenzeller, J., Martel, R., Derycke, V., Avouris, Ph

Volltext

Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices von Knoch, J., Mantl, S., Appenzeller, J.

Volltext

Comparing carbon nanotube transistors - the ideal choice: a novel tunneling device design von Appenzeller, J., Yu-Ming Lin, Knoch, J., Zhihong Chen, Avouris, P.

Volltext

Carbon nanotube electronics von Avouris, P., Appenzeller, J., Martel, R., Wind, S.J.

Volltext

Field-modulated carrier transport in carbon nanotube transistors von Appenzeller, J, Knoch, J, Derycke, V, Martel, R, Wind, S, Avouris, Ph

Volltext

Carbon nanotubes as schottky barrier transistors von Heinze, S, Tersoff, J, Martel, R, Derycke, V, Appenzeller, J, Avouris, Ph

Volltext

Outperforming the Conventional Scaling Rules in the Quantum-Capacitance Limit von Knoch, J., Riess, W., Appenzeller, J.

Volltext

High-performance carbon nanotube field-effect transistor with tunable polarities von Yu-Ming Lin, Appenzeller, J., Knoch, J., Avouris, P.

Volltext

Tunneling versus thermionic emission in one-dimensional semiconductors von Appenzeller, J, Radosavljević, M, Knoch, J, Avouris, Ph

Volltext

Lateral scaling in carbon-nanotube field-effect transistors von Wind, S J, Appenzeller, J, Avouris, Ph

Volltext

Conductance Asymmetry of Graphene p-n Junction von Low, T., Seokmin Hong, Appenzeller, J., Datta, S., Lundstrom, M.S.

Volltext

Externally Assembled Gate-All-Around Carbon Nanotube Field-Effect Transistor von Zhihong Chen, Farmer, D., Sheng Xu, Gordon, R., Avouris, P., Appenzeller, J.

Volltext

Frequency dependent characterization of transport properties in carbon nanotube transistors von Appenzeller, J., Frank, D. J.

Volltext