Consideration of switching mechanism of binary metal oxide resistive junctions using a thermal reaction model von Sato, Yoshihiro, Kinoshita, Kentaro, Aoki, Masaki, Sugiyama, Yoshihiro

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Unipolar resistive switching in CoFeB∕MgO∕CoFeB magnetic tunnel junction von Yoshida, Chikako, Kurasawa, Masaki, Lee, Young Min, Aoki, Masaki, Sugiyama, Yoshihiro

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Magnetic tunnel junctions for magnetic field sensor by using CoFeB sensing layer capped with MgO film von Takenaga, Takashi, Tsuzaki, Yosuke, Yoshida, Chikako, Yamazaki, Yuichi, Hatada, Akiyoshi, Nakabayashi, Masaaki, Iba, Yoshihisa, Takahashi, Atsushi, Noshiro, Hideyuki, Tsunoda, Koji, Aoki, Masaki, Furukawa, Taisuke, Fukumoto, Hiroshi, Sugii, Toshihiro

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I-V measurement of NiO nanoregion during observation by transmission electron microscopy von Fujii, Takashi, Arita, Masashi, Hamada, Kouichi, Kondo, Hirofumi, Kaji, Hiromichi, Takahashi, Yasuo, Moniwa, Masahiro, Fujiwara, Ichiro, Yamaguchi, Takeshi, Aoki, Masaki, Maeno, Yoshinori, Kobayashi, Toshio, Yoshimaru, Masaki

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Lowering the Switching Current of Resistance Random Access Memory Using a Hetero Junction Structure Consisting of Transition Metal Oxides von Kinoshita, Kentaro, Tamura, Tetsuro, Aoki, Masaki, Sugiyama, Yoshihiro, Tanaka, Hitoshi

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A study of dielectric breakdown mechanism in CoFeB/MgO/CoFeB magnetic tunnel junction von Yoshida, C., Kurasawa, M., Young Min Lee, Tsunoda, K., Aoki, M., Sugiyama, Y.

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Dominant Failure Mechanism in Data Retention Characteristics of Resistance Change Memory Consisting of NiO at High Temperature von Kinoshita, Kentaro, Okano, Ayumi, Tsunoda, Koji, Aoki, Masaki, Sugiyama, Yoshihiro

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Sub- \hbox\mu\hbox Reset Current of Nickel Oxide Resistive Memory Through Control of Filamentary Conductance by Current Limit of MOSFET von Sato, Yoshihiro, Tsunoda, Koji, Kinoshita, Kentaro, Noshiro, Hideyuki, Aoki, Masaki, Sugiyama, Yoshihiro

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Sub-100-μA Reset Current of Nickel Oxide Resistive Memory Through Control of Filamentary Conductance by Current Limit of MOSFET von SATO, Yoshihiro, TSUNODA, Koji, KINOSHITA, Kentaro, NOSHIRO, Hideyuki, AOKI, Masaki, SUGIYAMA, Yoshihiro

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Distribution of Fe in an intrinsic gettered silicon wafer after annealing at supersaturation temperature von AOKI, M, HARA, A

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Fundamental properties of intrinsic gettering of iron in a silicon wafer von AOKI, M, HARA, A, OHSAWA, A

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Enhanced Thermal Stability in Perpendicular Top-Pinned Magnetic Tunnel Junction With Synthetic Antiferromagnetic Free Layers von Yoshida, Chikako, Aoki, Masaki, Sugii, Toshihiro, Takenaga, Takashi, Iba, Yoshihisa, Yamazaki, Yuichi, Noshiro, Hideki, Tsunoda, Koji, Hatada, Akiyoshi, Nakabayashi, Masaaki, Takahashi, Atsushi

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Reduction of Offset Field in Top-Pinned MTJ With Synthetic Antiferromagnetic Free Layer von Yoshida, Chikako, Takenaga, Takashi, Yamazaki, Yuichi, Uehara, Haruka, Noshiro, Hideyuki, Tsunoda, Koji, Iba, Yoshihisa, Hatada, Akiyoshi, Nakabayashi, Masaaki, Takahashi, Atsushi, Aoki, Masaki, Sugii, Toshihiro

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Re-emission of iron originally gettered by oxygen precipitates in a silicon wafer von AOKI, M, HARA, A

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Reliability of MgO Tunneling Barrier for MRAM Device von Yoshida, C., Noshiro, H., Yamazaki, Y., Iizuka, T., Stoh, Y., Aoki, M., Umehara, S., Satoh, M., Kobayashi, K.

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Challenge to the New Sightseeing by Link the Story of the Town to the Smartphone by the Sound von Aoki, Masaki

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Model for NL10 thermal donors formed in annealed oxygen-rich silicon crystals von Hara, Akito, Aoki, Masaki, Koizuka, Masaaki, Fukuda, Tetsuo

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Novel Circuitry Configuration with Paired-Cell Erase Operation for High-Density 90-nm Embedded Resistive Random Access Memory von Sato, Yoshihiro, Tsunoda, Koji, Aoki, Masaki, Sugiyama, Yoshihiro

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Unipolar resistive switching in Co Fe B ∕ Mg O ∕ Co Fe B magnetictunnel junction von Yoshida, Chikako, Kurasawa, Masaki, Lee, Young Min, Aoki, Masaki, Sugiyama, Yoshihiro

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Hydrogen effects on oxygen precipitation in Czochralski silicon crystals von HARA, A, AOKI, M, FUKUDA, T, OHSAWA, A

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