Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers von Anzalone, Ruggero, Zimbone, Massimo, Calabretta, Cristiano, Mauceri, Marco, Alberti, Alessandra, Reitano, Riccardo, La Via, Francesco

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Impact of Dislocation on Warpage of Thinned 4H-SiC Wafers von Cafra, Brunella, Anzalone, Ruggero, Severino, Andrea

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Structural Characterization of Heteroepitaxial 3C-SiC von Severino, Andrea, Anzalone, Ruggero, La Via, Francesco, Camarda, Massimo, Piluso, Nicolò

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Impact of Nitrogen on the Selective Closure of Stacking Faults in 3C-SiC von Calabretta, Cristiano, Scuderi, Viviana, Bongiorno, Corrado, Cannizzaro, Annalisa, Anzalone, Ruggero, Calcagno, Lucia, Mauceri, Marco, Crippa, Danilo, Boninelli, Simona, La Via, Francesco

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High Temperature Etching for Threading Dislocation Investigation on GaN Epi-Layer von Roccaforte, Fabrizio, Greco, Giuseppe, Anzalone, Ruggero, Piluso, Nicolo, Severino, Andrea, Fiorenza, Patrick

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Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis von Scuderi, Viviana, Calabretta, Cristiano, Anzalone, Ruggero, Mauceri, Marco, La Via, Francesco

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High Quality Single Crystal 3C-SiC(111) Films Grown on Si(111) von Bongiorno, Corrado, La Via, Francesco, Litrico, Grazia, Anzalone, Ruggero, Severino, Andrea, Locke, Christopher, Saddow, Stephen E.

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Multiscale atomistic modelling of CVD: From gas-phase reactions to lattice defects von Raciti, Domenica, Calogero, Gaetano, Ricciarelli, Damiano, Anzalone, Ruggero, Morale, Giuseppe, Murabito, Domenico, Deretzis, Ioannis, Fisicaro, Giuseppe, La Magna, Antonino

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New Approaches and Understandings in the Growth of Cubic Silicon Carbide von La Via, Francesco, Zimbone, Massimo, Bongiorno, Corrado, La Magna, Antonino, Fisicaro, Giuseppe, Deretzis, Ioannis, Scuderi, Viviana, Calabretta, Cristiano, Giannazzo, Filippo, Zielinski, Marcin, Anzalone, Ruggero, Mauceri, Marco, Crippa, Danilo, Scalise, Emilio, Marzegalli, Anna, Sarikov, Andrey, Miglio, Leo, Jokubavicius, Valdas, Syväjärvi, Mikael, Yakimova, Rositsa, Schuh, Philipp, Schöler, Michael, Kollmuss, Manuel, Wellmann, Peter

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Large Area Growth of Cubic Silicon Carbide Using Close Space PVT by Application of Homoepitaxial Seeding von Schöler, Michael, Anzalone, Ruggero, Kollmuss, Manuel, Mauceri, Marco, Wellmann, Peter J., La Via, Francesco

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Impact of N Doping on 3C-SiC Defects von Crippa, Danilo, Boninelli, Simona, Mauceri, Marco, La Via, Francesco, Scuderi, Viviana, Anzalone, Ruggero, Cannizzaro, Annalisa, Calabretta, Cristiano

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Effect of N and Al Doping on 3C-SiC Stacking Faults von Crippa, Danilo, Boninelli, Simona, Mauceri, Marco, La Via, Francesco, Scuderi, Viviana, Anzalone, Ruggero, Cannizzaro, Annalisa, Calabretta, Cristiano

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Dislocations Propagation Study Trough High-Resolution 4H-SiC Substrate Mapping von Lorenti, Simona, Anzalone, Ruggero, Piluso, Nicolo, Severino, Andrea, Arena, Giuseppe, Coffa, Salvo

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Dislocations Analysis on Implanted (p-Type and n-Type) 4H-SiC Epi-Layer by KOH Molten Etching von Anzalone, Ruggero, Piluso, Nicolo, Severino, Andrea, Coffa, Salvo

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Effect of Nitrogen and Aluminum Doping on 3C-SiC Heteroepitaxial Layers Grown on 4° Off-Axis Si (100) von Calabretta, Cristiano, Scuderi, Viviana, Anzalone, Ruggero, Mauceri, Marco, Crippa, Danilo, Cannizzaro, Annalisa, Boninelli, Simona, La Via, Francesco

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3C-SiC Bulk Growth: Effect of Growth Rate and Doping on Defects and Stress von Scuderi, Viviana, Anzalone, Ruggero, Mauceri, Marco, Calabretta, Cristiano, Zimbone, Massimo, La Via, Francesco

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3C-SiC Growth on Inverted Silicon Pyramids Patterned Substrate von Zimbone, Massimo, Zielinski, Marcin, Bongiorno, Corrado, Calabretta, Cristiano, Anzalone, Ruggero, Scalese, Silvia, Fisicaro, Giuseppe, La Magna, Antonino, Mancarella, Fulvio, La Via, Francesco

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Study of microstructure deflections and film/substrate curvature under generalized stress fields and mechanical properties von Camarda, Massimo, Anzalone, Ruggero, La Magna, Antonino, La Via, Francesco

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Impact of Threading Dislocations Detected by KOH Etching on 4H-SiC 650 V MOSFET Device Failure after Reliability Test von Carbone, Beatrice, Severino, Andrea, Piluso, Nicolo, Anzalone, Ruggero, Vitanza, Elisa, Coffa, Salvo, Russo, Alfio

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Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate von Litrico, Grazia, Piluso, Nicolo, Lorenti, Simona, Coffa, Salvo, La Via, Francesco, Anzalone, Ruggero, Arena, Giuseppe

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