Facilitation of GaN-Based RF- and HV-Circuit Designs Using MVS-GaN HEMT Compact Model von Radhakrishna, Ujwal, Choi, Pilsoon, Antoniadis, Dimitri A.

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Negative Capacitance Behavior in a Leaky Ferroelectric von Khan, Asif Islam, Radhakrishna, Ujwal, Chatterjee, Korok, Salahuddin, Sayeef, Antoniadis, Dimitri A.

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Compact Models and the Physics of Nanoscale FETs von Lundstrom, Mark S., Antoniadis, Dimitri A.

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Trap Assisted Tunneling and Its Effect on Subthreshold Swing of Tunnel FETs von Sajjad, Redwan N., Chern, Winston, Hoyt, Judy L., Antoniadis, Dimitri A.

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Work Function Engineering for Performance Improvement in Leaky Negative Capacitance FETs von Khan, Asif Islam, Radhakrishna, Ujwal, Salahuddin, Sayeef, Antoniadis, Dimitri

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Analysis of Carrier Transport in Short-Channel MOSFETs von Majumdar, Amlan, Antoniadis, Dimitri A.

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Switching Dynamics in Metal-Ferroelectric HfZrO2-Metal Structures von Kim, Taekyong, del Alamo, Jesus A., Antoniadis, Dimitri A.

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Antiferroelectric negative capacitance from a structural phase transition in zirconia von Hoffmann, Michael, Wang, Zheng, Tasneem, Nujhat, Zubair, Ahmad, Ravindran, Prasanna Venkatesan, Tian, Mengkun, Gaskell, Anthony Arthur, Triyoso, Dina, Consiglio, Steven, Tapily, Kandabara, Clark, Robert, Hur, Jae, Pentapati, Sai Surya Kiran, Lim, Sung Kyu, Dopita, Milan, Yu, Shimeng, Chern, Winston, Kacher, Josh, Reyes-Lillo, Sebastian E., Antoniadis, Dimitri, Ravichandran, Jayakanth, Slesazeck, Stefan, Mikolajick, Thomas, Khan, Asif Islam

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Design of Tunneling Field-Effect Transistors Using Strained-Silicon/Strained-Germanium Type-II Staggered Heterojunctions von Nayfeh, O.M., Chleirigh, C.N., Hennessy, J., Gomez, L., Hoyt, J.L., Antoniadis, D.A.

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MOSFET Performance Scaling-Part I: Historical Trends von Khakifirooz, Ali, Antoniadis, Dimitri A.

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Virtual-Source-Based Self-Consistent Current and Charge FET Models: From Ballistic to Drift-Diffusion Velocity-Saturation Operation von Lan Wei, Mysore, O., Antoniadis, D.

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Engineering the Electron-Hole Bilayer Tunneling Field-Effect Transistor von Agarwal, Sapan, Teherani, James T., Hoyt, Judy L., Antoniadis, Dimitri A., Yablonovitch, Eli

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A Novel Digital Etch Technique for Deeply Scaled III-V MOSFETs von Jianqiang Lin, Xin Zhao, Antoniadis, Dimitri A., del Alamo, Jesus A.

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Impact of Intrinsic Channel Scaling on InGaAs Quantum-Well MOSFETs von Jianqiang Lin, Antoniadis, Dimitri A., del Alamo, Jesus A.

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Investigation of Source Starvation in High-Transconductance III-V Quantum-Well MOSFETs von Rau, Martin, Lin, Jianqiang, Antoniadis, Dimitri A., del Alamo, Jesus A., Luisier, Mathieu

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Fabrication, Characterization, and Analysis of Ge/GeSn Heterojunction p-Type Tunnel Transistors von Schulte-Braucks, Christian, Pandey, Rahul, Sajjad, Redwan Noor, Barth, Mike, Ghosh, Ram Krishna, Grisafe, Ben, Sharma, Pankaj, von den Driesch, Nils, Vohra, Anurag, Rayner, Gilbert Bruce, Loo, Roger, Mantl, Siegfried, Buca, Dan, Chih-Chieh Yeh, Cheng-Hsien Wu, Tsai, Wilman, Antoniadis, Dimitri A., Datta, Suman

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An Ambipolar Virtual-Source-Based Charge-Current Compact Model for Nanoscale Graphene Transistors von Rakheja, Shaloo, Yanqing Wu, Han Wang, Palacios, Tomas, Avouris, Phaedon, Antoniadis, Dimitri A.

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MOSFET Performance Scaling-Part II: Future Directions von Khakifirooz, A., Antoniadis, D.A.

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DISC-FETs: Dual Independent Stacked Channel Field-Effect Transistors von Kanhaiya, Pritpal S., Hills, Gage, Antoniadis, Dimitri A., Shulaker, Max M.

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Compact Model for Carbon Nanotube Field-Effect Transistors Including Nonidealities and Calibrated With Experimental Data Down to 9-nm Gate Length von Jieying Luo, Lan Wei, Chi-Shuen Lee, Franklin, A. D., Ximeng Guan, Pop, E., Antoniadis, D. A., Wong, H. P.

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