Lattice compression from conduction electrons in heavily doped Si:As von CARGILL, G. S, ANGILELLO, J, KAVANAGH, K. L

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A Viscous Flow Model to Explain the Appearance of High Density Thermal SiO2 at Low Oxidation Temperatures von Irene, E. A., Tierney, E., Angilello, J.

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Thermal stability of Si1-xCx/Si strained layer superlattices von GOORSKY, M. S, IYER, S. S, EBERL, K, LEGOUES, F, ANGILELLO, J, CARDONE, F

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Disorder in Al-Li-Cu and Al-Mn-Si Icosahedral Alloys von Heiney, P. A., Bancel, P. A., Horn, P. M., Jordan, J. L., LaPlaca, S., Angilello, J., Gayle, F. W.

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Properties of diamond structure SnGe films grown by molecular beam epitaxy von Harwit, Alex, Pukite, P.R., Angilello, J., Iyer, S.S.

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Crystallization kinetics of amorphous NiSix films von THOMPSON, R. D, ANGILELLO, J, TU, K. N

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Stresses and radiation damage in Ar+ and Ti+ ion-implanted silicon von MADAKSON, P, ANGILELLO, J

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Contact reaction between Si and Pd-W alloy films von Olowolafe, J. O., Tu, K. N., Angilello, J.

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Oriented growth of ultrathin tungsten films on sapphire substrates von SOUK, J. H, SEGMULLER, A, ANGILELLO, J

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High-speed X-ray diffraction and in situ resistivity measurements at temperatures of 100 to 1000 K von Angilello, J., Thompson, R. D., Tu, K. N.

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Preparation and some properties of sputtered Co/U-As multilayers von Plaskett, T.S., Fumagalli, P., McGuire, T.R., Gambino, R.J., Bojarczuk, N.A., Angilello, J.

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Epitaxy of (100) Cu on (100) Si by evaporation near room temperatures : in-plane epitaxial relation and channeling analysis von CHIN-AN CHANG, LIU, J. C, ANGILELLO, J

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Precise lattice parameter determination of PtHg4 von Lahiri, S. K., Angilello, J., Natan, M.

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Flash X-ray Microscopy von McCorkle, R., Angilello, J., Coleman, G., Feder, R., La Placa, S. J.

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Etch pits and dislocations in {100} GaAs wafers von Angilello, J., Potemski, R. M., Woolhouse, G. R.

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Thermal stability of Pb-alloy Josephson junction electrode materials. VII: Concentration range of single ε-phase Pb-Bi films used in counterelectrodes von MURAKAMI, M, HUANG, H. C. W, ANGILELLO, J, GILBERT, B. L

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Preparation and Characterization of Ruthenium Dioxide Crystals von Shafer, M. W., Figat, R. A., Olson, B., LaPlaca, S. J., Angilello, J.

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Tantalum silicide films deposited by dc sputtering von Angilello, J., Baglin, J. E. E., Cardone, F., Dempsey, J. J., d'Heurle, F. M., Irene, E. A., Maclnnes, R., Petersson, C. S., Savoy, R., Segmuller, A. P., Tierney, E.

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Crystallization kinetics of amorphous NiSi x films von Thompson, R.D., Angilello, J., Tu, K.N.

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Thermal stability of Si1− x C x /Si strained layer superlattices von Goorsky, M. S., Iyer, S. S., Eberl, K., Legoues, F., Angilello, J., Cardone, F.

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