Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation von Yuhao Zhang, Zhihong Liu, Tadjer, Marko J., Min Sun, Piedra, Daniel, Hatem, Christopher, Anderson, Travis J., Luna, Lunet E., Nath, Anindya, Koehler, Andrew D., Okumura, Hironori, Jie Hu, Xu Zhang, Xiang Gao, Feigelson, Boris N., Hobart, Karl D., Palacios, Tomas

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Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties von Anaya, Julian, Rossi, Stefano, Alomari, Mohammed, Kohn, Erhard, Tóth, Lajos, Pécz, Béla, Hobart, Karl D., Anderson, Travis J., Feygelson, Tatyana I., Pate, Bradford B., Kuball, Martin

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Detecting defects that reduce breakdown voltage using machine learning and optical profilometry von Gallagher, James C., Mastro, Michael A., Jacobs, Alan G., Kaplar, Robert. J., Hobart, Karl D., Anderson, Travis J.

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Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques von Gallagher, James C., Ebrish, Mona A., Porter, Matthew A., Jacobs, Alan G., Gunning, Brendan P., Kaplar, Robert J., Hobart, Karl D., Anderson, Travis J.

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Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation von Anderson, Travis J., Koehler, Andrew D., Greenlee, Jordan D., Weaver, Bradley D., Mastro, Michael A., Hite, Jennifer K., Eddy, Charles R., Kub, Francis J., Hobart, Karl D.

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Using machine learning with optical profilometry for GaN wafer screening von Gallagher, James C., Mastro, Michael A., Ebrish, Mona A., Jacobs, Alan G., Gunning, Brendan P., Kaplar, Robert J., Hobart, Karl D., Anderson, Travis J.

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Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates von Caldwell, Joshua D, Anderson, Travis J, Culbertson, James C, Jernigan, Glenn G, Hobart, Karl D, Kub, Fritz J, Tadjer, Marko J, Tedesco, Joseph L, Hite, Jennifer K, Mastro, Michael A, Myers-Ward, Rachael L, Eddy, Charles R, Campbell, Paul M, Gaskill, D. Kurt

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Reduced Self-Heating in AlGaN/GaN HEMTs Using Nanocrystalline Diamond Heat-Spreading Films von Tadjer, M. J., Anderson, T. J., Hobart, K. D., Feygelson, T. I., Caldwell, J. D., Eddy, C. R., Kub, F. J., Butler, J. E., Pate, B., Melngailis, J.

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Role of Capping Material and GaN Polarity on Mg Ion Implantation Activation von Jacobs, Alan G., Feigelson, Boris N., Hite, Jennifer K., Gorsak, Cameron A., Luna, Lunet E., Anderson, Travis J., Kub, Francis J.

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Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation von Koehler, Andrew D., Nepal, Neeraj, Anderson, Travis J., Tadjer, Marko J., Hobart, Karl D., Eddy, Charles R., Kub, Francis J.

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Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices von Jacobs, Alan G., Feigelson, Boris N., Spencer, Joseph A., Tadjer, Marko J., Hite, Jennifer K., Hobart, Karl D., Anderson, Travis J.

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Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties von Greenlee, Jordan D., Feigelson, Boris N., Anderson, Travis J., Tadjer, Marko J., Hite, Jennifer K., Mastro, Michael A., Eddy, Charles R., Hobart, Karl D., Kub, Francis J.

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Epitaxial Lift-Off and Transfer of III-N Materials and Devices from SiC Substrates von Meyer, David J., Downey, Brian P., Katzer, D. Scott, Nepal, Neeraj, Wheeler, Virginia D., Hardy, Matthew T., Anderson, Travis J., Storm, David F.

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Improvements in the Annealing of Mg Ion Implanted GaN and Related Devices von Anderson, Travis J., Greenlee, Jordan D., Feigelson, Boris N., Hite, Jennifer K., Hobart, Karl D., Kub, Francis J.

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Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs von Greenlee, Jordan D., Specht, Petra, Anderson, Travis J., Koehler, Andrew D., Weaver, Bradley D., Luysberg, Martina, Dubon, Oscar D., Kub, Francis J., Weatherford, Todd R., Hobart, Karl D.

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Characterization of an Mg-implanted GaN p-i-n diode von Greenlee, Jordan D., Anderson, Travis J., Feigelson, Boris N., Hobart, Karl D., Kub, Francis J.

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A discussion on various experimental methods of impact ionization coefficient measurement in GaN von Ji, Dong, Zeng, Ke, Bian, Zhengliang, Shankar, Bhawani, Gunning, Brendan P., Binder, Andrew, Dickerson, Jeramy R., Aktas, Ozgur, Anderson, Travis J., Kaplar, Robert J., Chowdhury, Srabanti

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Impact of Anode Thickness on Breakdown Mechanisms in Vertical GaN PiN Diodes with Planar Edge Termination von Ebrish, Mona, Porter, Matthew, Jacobs, Alan, Gallagher, James, Kaplar, Robert, Gunning, Brendan, Hobart, Karl, Anderson, Travis

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Epitaxial Growth of III--Nitride/Graphene Heterostructures for Electronic Devices von Nepal, Neeraj, Wheeler, Virginia D, Anderson, Travis J, Kub, Francis J, Mastro, Michael A, Myers-Ward, Rachael L, Qadri, Syed B, Freitas, Jaime A, Hernandez, Sandra C, Nyakiti, Luke O, Walton, Scott G, Gaskill, Kurt, Eddy, Charles R

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Nanocrystalline diamond capped AlGaN/GaN high electron mobility transistors via a sacrificial gate process von Tadjer, Marko J., Anderson, Travis J., Feygelson, Tatyana I., Hobart, Karl D., Hite, Jennifer K., Koehler, Andrew D., Wheeler, Virginia D., Pate, Bradford B., Eddy Jr, Charles R., Kub, Fritz J.

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