Microstructural evolution of extended defects in 25 μm thick GaN homo-epitaxial layers von Liao, Michael E., Mahadik, Nadeemullah A., Gallagher, James C., Gunning, Brendan P., Kaplar, Robert J., Anderson, Travis J.

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12.5 kV GaN Super-Heterojunction Schottky Barrier Diodes von Han, Sang-Woo, Song, Jianan, Sadek, Mansura, Molina, Alex, Ebrish, Mona A., Mohney, Suzanne E., Anderson, Travis J., Chu, Rongming

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Role of Capping Material and GaN Polarity on Mg Ion Implantation Activation von Jacobs, Alan G., Feigelson, Boris N., Hite, Jennifer K., Gorsak, Cameron A., Luna, Lunet E., Anderson, Travis J., Kub, Francis J.

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Patient Satisfaction With Medical Student Participation in a Longitudinal Integrated Clerkship: A Controlled Trial von Beard, Albertine S, Candy, Amy E, Anderson, Travis J, Derrico, Nicholas P, Ishani, Khalid A, Gravely, Amy A, Englander, Robert, Ercan-Fang, Nacide G

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Epitaxial Lift-Off and Transfer of III-N Materials and Devices from SiC Substrates von Meyer, David J., Downey, Brian P., Katzer, D. Scott, Nepal, Neeraj, Wheeler, Virginia D., Hardy, Matthew T., Anderson, Travis J., Storm, David F.

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The Role of Dedicated Musculoskeletal Urgent Care Centers in Reducing Cost and Improving Access to Orthopaedic Care von Anderson, Travis J, Althausen, Peter L

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Polarity dependent implanted p-type dopant activation in GaN von Jacobs, Alan G., Feigelson, Boris N., Hite, Jennifer K., Gorsak, Cameron A., Luna, Lunet E., Anderson, Travis J., Kub, Francis J.

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Characterization of an Mg-implanted GaN p-i-n diode von Greenlee, Jordan D., Anderson, Travis J., Feigelson, Boris N., Hobart, Karl D., Kub, Francis J.

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An FPGA-based hardware accelerator supporting sensitive sequence homology filtering with profile hidden Markov models von Anderson, Tim, Wheeler, Travis J

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Spatial Mapping of Pristine and Irradiated AlGaN/GaN HEMTs With UV Single-Photon Absorption Single-Event Transient Technique von Khachatrian, Ani, Roche, Nicolas J-H, Buchner, Stephen P., Koehler, Andrew D., Greenlee, Jordan D., Anderson, Travis J., Warner, Jeffrey H., McMorrow, Dale

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Investigation of the Reverse Leakage Behavior and Substrate Defects in Vertical GaN Schottky and PIN Diodes von Wang, Yekan, Liao, Michael E, Huynh, Kenny, Olsen, William, Gallagher, James C, Anderson, Travis J, Huang, Xianrong, Wojcik, Michael J, Goorsky, Mark S

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Improvements in the Annealing of Mg Ion Implanted GaN and Related Devices von Anderson, Travis J., Greenlee, Jordan D., Feigelson, Boris N., Hite, Jennifer K., Hobart, Karl D., Kub, Francis J.

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GaN-On-Diamond HEMT Technology With TAVG = 176°C at PDC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging von Tadjer, Marko J., Anderson, Travis J., Ancona, Mario G., Raad, Peter E., Komarov, Pavel, Bai, Tingyu, Gallagher, James C., Koehler, Andrew D., Goorsky, Mark S., Francis, Daniel A., Hobart, Karl D., Kub, Fritz J.

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Characterization of a selective AlN wet etchant von Greenlee, Jordan D., Anderson, Travis J., Feigelson, Boris N., Koehler, Andrew D., Hobart, Karl D., Kub, Francis J.

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High resistivity halide vapor phase homoepitaxial β-Ga2O3 films co-doped by silicon and nitrogen von Tadjer, Marko J., Koehler, Andrew D., Freitas, Jaime A., Gallagher, James C., Specht, Matty C., Glaser, Evan R., Hobart, Karl D., Anderson, Travis J., Kub, Fritz J., Thieu, Quang T., Sasaki, Kohei, Wakimoto, Daiki, Goto, Ken, Watanabe, Shinya, Kuramata, Akito

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Symmetric Multicycle Rapid Thermal Annealing: Enhanced Activation of Implanted Dopants in GaN von Greenlee, Jordan D., Feigelson, Boris N., Anderson, Travis J., Hite, Jennifer K., Hobart, Karl D., Kub, Francis J.

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Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation von Yuhao Zhang, Zhihong Liu, Tadjer, Marko J., Min Sun, Piedra, Daniel, Hatem, Christopher, Anderson, Travis J., Luna, Lunet E., Nath, Anindya, Koehler, Andrew D., Okumura, Hironori, Jie Hu, Xu Zhang, Xiang Gao, Feigelson, Boris N., Hobart, Karl D., Palacios, Tomas

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An optimized FM-index library for nucleotide and amino acid search von Anderson, Tim, Wheeler, Travis J

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Effect of Reduced Extended Defect Density in MOCVD Grown AlGaN/GaN HEMTs on Native GaN Substrates von Anderson, Travis J., Tadjer, Marko J., Hite, Jennifer K., Greenlee, Jordan D., Koehler, Andrew D., Hobart, Karl D., Kub, Fritz J.

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Crystal polarity role in Mg incorporation during GaN solution growth von Freitas, Jaime A., Feigelson, Boris N., Anderson, Travis J.

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