Бутылочный затвор von ALPEROVICH A.S, SVESHNIKOV B.P

Volltext bestellen

Складная безопасная бритва von YAKHNIN E.S, ALPEROVICH A.S

Volltext bestellen

Thermal roughening of GaAs surface by unwinding dislocation-induced spiral atomic steps during sublimation von Kazantsev, D.M., Akhundov, I.O., Rudaya, N.S., Kozhukhov, A.S., Alperovich, V.L., Latyshev, A.V.

Volltext

Monte Carlo simulation of GaAs(001) surface smoothing in equilibrium conditions von Kazantsev, D.M., Akhundov, I.O., Karpov, A.N., Shwartz, N.L., Alperovich, V.L., Terekhov, A.S., Latyshev, A.V.

Volltext

Local monitoring of atomic steps on GaAs(001) surface under oxidation, wet removal of oxides and thermal smoothing von Akhundov, I.O., Kazantsev, D.M., Alperovich, V.L., Sheglov, D.V., Kozhukhov, A.S., Latyshev, A.V.

Volltext

Kinetics of atomic smoothing GaAs(001) surface in equilibrium conditions von Akhundov, I.O., Alperovich, V.L., Latyshev, A.V., Terekhov, A.S.

Volltext

Surface passivation and morphology of GaAs(1 0 0) treated in HCl-isopropanol solution von Alperovich, V.L., Tereshchenko, O.E., Rudaya, N.S., Sheglov, D.V., Latyshev, A.V., Terekhov, A.S.

Volltext

Thermal Smoothing and Roughening of GaAs Surfaces: Experiment and Monte Carlo Simulation von Kazantsev, D. M., Akhundov, I. O., Alperovich, V. L., Shwartz, N. L., Kozhukhov, A. S., Latyshev, A. V.

Volltext

Composition and structure of chemically prepared GaAs(1 1 1)A and (1 1 1)B surfaces von Tereshchenko, O.E., Alperovich, V.L., Terekhov, A.S.

Volltext

Structural and electronic transformations at the Cs/GaAs [formula omitted] interface von Tereshchenko, O.E., Voronin, V.S., Scheibler, H.E., Alperovich, V.L., Terekhov, A.S.

Volltext

Polarized cathodoluminescence induced by low-energy spin-polarized electrons injected in p-GaAs(Cs,O) von Alperovich, V.L., Terekhov, A.S., Jaroshevich, A.S., Lampel, G., Lassailly, Y., Peretti, J., Rougemaille, N., Wirth, T.

Volltext

Evolution of interface excitations under phase transition in two-dimensional layer of Cs on GaAs(1 0 0) and (1 1 1) von Alperovich, V.L, Tereshchenko, O.E, Litvinov, A.N, Terekhov, A.S

Volltext

Safety assessment of the contact electropulse lithotripsy for the biliary tract in choledocholithiasis von Semichev, E.V., Podgornov, V.F., Kokorin, A.S.

Volltext

Determination of built-in electric fields in delta-doped GaAs structures by phase-sensitive photoreflectance von Alperovich, V.L., Jaroshevich, A.S., Scheibler, H.E., Terekhov, A.S.

Volltext

Unpinned behavior of the electronic properties of a p-GaAs(Cs,O) surface at room temperature von Alperovich, V.L., Paulish, A.G., Terekhov, A.S.

Volltext

New material for photoemission electron source: semiconductor alloy InGaAsP grown on GaAs substrate von Alperovich, V.L., Bolkhovityanov, Yu.B., Paulish, A.G., Terekhov, A.S.

Volltext

Emission of spin-polarized electrons from strained InGaP and InGaAsP photocathodes von Drescher, P., Plützer, S., Reichert, E., Schemies, M., Alperovich, V.L., Bolkhovityanov, Yu.B., Jaroshevich, A.S., Paulish, A.G., Scheibler, H.E., Terekhov, A.S.

Volltext

Unpinned behavior of the Fermi level and photovoltage on p-(100) GaAs surface facilitated by deposition of cesium von Alperovich, V.L., Paulish, A.G., Scheibler, H.E., Tynnyi, V.I., Terekhov, A.S.

Volltext

Liquid phase epitaxial growth of elastically strained InGaAsP layers for spin-polarized electron sources von Bolkhovityanov, Yu.B., Alperovich, V.L., Jaroshevich, A.S., Nomerotsky, N.V., Paulish, A.G., Terekhov, A.S., Trukhanov, E.M.

Volltext

Tunneling-assisted optical transitions in GaAs delta-doped superlattices von Alperovich, V.L., Jaroshevich, A.S., Lubyshev, D.I., Migal, V.P.

Volltext