Impact of Surface Recombination on Single-Event Charge Collection in an SOI Technology von Tonigan, Andrew M., Ball, Dennis, Vizkelethy, Gyorgy, Black, Jeffrey, Black, Dolores, Trippe, James, Bielejec, Edward, Alles, Michael L., Reed, Robert, Schrimpf, Ronald D.

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The Impact of Delta-Rays on Single-Event Upsets in Highly Scaled SOI SRAMs von King, M P, Reed, R A, Weller, R A, Mendenhall, M H, Schrimpf, R D, Alles, M L, Auden, E C, Armstrong, S E, Asai, M

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Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors von Simoen, E., Gaillardin, M., Paillet, P., Reed, R. A., Schrimpf, R. D., Alles, M. L., El-Mamouni, F., Fleetwood, D. M., Griffoni, A., Claeys, C.

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Total-Ionizing-Dose Effects on 3-D Sequentially Integrated FDSOI Ring Oscillators von Toguchi, Shintaro, Zhang, En Xia, Fleetwood, Daniel M., Schrimpf, Ronald D., Moreau, Stephane, Batude, Perrine, Brunet, Laurent, Andrieu, Francois, Alles, Michael L.

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On-Chip Emulation and Measurement of Variable-Length Photocurrents in Sub-50nm ICs von D'Amico, Joseph V., Vibbert, Sean T., Cadena, Rick M., Alles, Michael L., Ball, Dennis R., Sternberg, Andrew L., Zhang, En Xia, Holman, W. Timothy, Kauppila, Jeffrey S., Massengill, Lloyd W.

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Single-Event Effects in Heavy-Ion Irradiated 3-kV SiC Charge-Balanced Power Devices von Sengupta, Arijit, Ball, Dennis R., Islam, Sajal, Senarath, Aditha S., Sternberg, Andrew L., Zhang, En Xia, Alles, Michael L., Osheroff, Jason M., Ghandi, Reza, Jacob, Biju, Goswami, Shubhodeep, Hitchcock, Collin W., Hutson, John M., Reed, Robert A., Galloway, Kenneth F., Schrimpf, Ronald D., Witulski, Arthur F.

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Total-Ionizing-Dose Effects on 3D Sequentially Integrated, Fully Depleted Silicon-on-Insulator MOSFETs von Toguchi, Shintaro, Zhang, En Xia, Gorchichko, Mariia, Fleetwood, Daniel M., Schrimpf, Ronald D., Reed, Robert A., Moreau, Stephane, Cheramy, Severine, Batude, Perrine, Brunet, Laurent, Andrieu, Francois, Alles, Michael L.

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Effects of Layer-to-Layer Coupling on the Total-Ionizing-Dose Response of 3-D-Sequentially Integrated FD-SOI MOSFETs von Toguchi, Shintaro, Zhang, En Xia, Rony, Mohammed W., Luo, Xuyi, Fleetwood, Daniel M., Schrimpf, Ronald D., Moreau, Stephane, Cheramy, Severine, Batude, Perrine, Brunet, Laurent, Andrieu, Francois, Alles, Michael L.

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Impact of Heavy-Ion Range on Single-Event Effects in Silicon Carbide Power Junction Barrier Schottky Diodes von Sengupta, Arijit, Ball, Dennis R., Witulski, Arthur F., Zhang, En Xia, Schrimpf, Ronald D., Galloway, Kenneth F., Reed, Robert A., Alles, Michael L., McCurdy, Michael W., Sternberg, Andrew L., Johnson III, Robert A., Howell, Mick E., Osheroff, Jason M., Hutson, John M.

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Total-Ionizing-Dose Effects and Low-Frequency Noise in N-type Carbon Nanotube Field-Effect Transistors with HfO2 Gate Dielectrics von Darmawi-Iskandar, Patrick K., Aaron, Andrew M., Zhang, En Xia, Bhuva, Bharat L., Kauppila, Jeffery S., Davidson, Jim L., Alles, Michael L., Fleetwood, Daniel M., Massengill, Lloyd W.

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Total Ionizing Dose Responses of 22-nm FDSOI and 14-nm Bulk FinFET Charge-Trap Transistors von Brewer, Rachel M., Zhang, En Xia, Gorchichko, Mariia, Wang, Peng Fei, Cox, Jonathan, Moran, Steven L., Ball, Dennis R., Sierawski, Brian D., Fleetwood, Daniel M., Schrimpf, Ronald D., Iyer, Subramanian S., Alles, Michael L.

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Low-Frequency and Random Telegraph Noise in 14-nm Bulk Si Charge-Trap Transistors von Gorchichko, Mariia, Zhang, En Xia, Reaz, Mahmud, Li, Kan, Wang, Peng Fei, Cao, Jingchen, Brewer, Rachel M., Schrimpf, Ronald D., Reed, Robert A., Sierawski, Brian D., Alles, Michael L., Cox, Jonathan, Moran, Steven L., Iyer, Subramanian S., Fleetwood, Daniel M.

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Charge Collection and Charge Sharing in a 130 nm CMOS Technology von Amusan, O.A., Witulski, A.F., Massengill, L.W., Bhuva, B.L., Fleming, P.R., Alles, M.L., Sternberg, A.L., Black, J.D., Schrimpf, R.D.

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Parametric Variability Affecting 45 nm SOI SRAM Single Event Upset Cross-Sections von Loveless, Thomas Daniel, Alles, M L, Ball, D R, Warren, K M, Massengill, L W

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LET and Voltage Dependence of Single-Event Burnout and Single-Event Leakage Current in High-Voltage SiC Power Devices von Sengupta, Arijit, Ball, Dennis R., Sternberg, Andrew L., Islam, Sajal, Senarath, Aditha S., Reed, Robert A., McCurdy, Michael W., Zhang, En Xia, Hutson, John M., Alles, Michael L., Osheroff, Jason M., Jacob, Biju, Hitchcock, Collin W., Goswami, Shubhodeep, Schrimpf, Ronald D., Galloway, Kenneth F., Witulski, Arthur F.

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Analysis of Single-Event Upsets and Transients in 22 nm Fully Depleted Silicon-On-Insulator Logic von D’Amico, Joseph V., Vibbert, Sean T., Watkins, Arthur C., Fahrenkrug, Benjamin C., Haeffner, Tim D., Ball, Dennis R., Sternberg, Andrew L., Alles, Michael L., Kauppila, Jeffrey S., Massengill, Lloyd W.

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Influence of Radiation Environment Variability on Cumulative Heavy-Ion-Induced Leakage Current in SiC Power Devices von Johnson, R. A., Witulski, A. F., Sierawski, B. D., Ball, D. R., Galloway, K. F., Sternberg, A. L., Reed, R. A., Schrimpf, R. D., Alles, M. L., Lauenstein, J. M., Hutson, J.M.

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Low-Frequency Noise and Border Traps in Irradiated nMOS and pMOS Bulk Si FinFETs with SiO2/HfO2 Gate Dielectrics von Li, Kan, Luo, Xuyi, Rony, M. W., Gorchichko, Mariia, Hiblot, Gaspard, Van Huylenbroeck, Stefaan, Jourdain, Anne, Alles, Michael L., Reed, Robert A., Zhang, En Xia, Fleetwood, Daniel M., Schrimpf, Ronald D.

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Analysis of Heavy-Ion-Induced Leakage Current in SiC Power Devices von Johnson, Robert A., Witulski, Arthur F., Ball, Dennis R., Galloway, Kenneth F., Sternberg, Andrew L., Reed, Robert A., Schrimpf, Ronald D., Alles, Michael L., Lauenstein, Jean-Marie, Hutson, John M.

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Charge Trapping and Transconductance Degradation in Irradiated 3-D Sequentially Integrated FDSOI MOSFETs von Toguchi, Shintaro, Zhang, En Xia, Fleetwood, Daniel M., Schrimpf, Ronald D., Reed, Robert A., Moreau, Stephane, Cheramy, Severine, Batude, Perrine, Brunet, Laurent, Andrieu, Francois, Alles, Michael L.

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