β-Gallium oxide power electronics von Green, Andrew J., Speck, James, Xing, Grace, Moens, Peter, Allerstam, Fredrik, Gumaelius, Krister, Neyer, Thomas, Arias-Purdue, Andrea, Mehrotra, Vivek, Kuramata, Akito, Sasaki, Kohei, Watanabe, Shinya, Koshi, Kimiyoshi, Blevins, John, Bierwagen, Oliver, Krishnamoorthy, Sriram, Leedy, Kevin, Arehart, Aaron R., Neal, Adam T., Mou, Shin, Ringel, Steven A., Kumar, Avinash, Sharma, Ankit, Ghosh, Krishnendu, Singisetti, Uttam, Li, Wenshen, Chabak, Kelson, Liddy, Kyle, Islam, Ahmad, Rajan, Siddharth, Graham, Samuel, Choi, Sukwon, Cheng, Zhe, Higashiwaki, Masataka

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Complications of Charge Pumping Analysis for Silicon Carbide MOSFETs von Moens, Peter, Lettens, Jan, Goovaerts, Etienne, Allerstam, Fredrik, Franchi, Jimmy, Cambré, Sofie, Vrielinck, Henk

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Gate Oxide Reliability and VTH Stability of Planar SiC MOS Technology von Moens, Peter, Maslougkas, Sotirios, Allerstam, Fredrik, Domeij, Martin, Franchi, Jimmy, Choi, Jake, Lettens, Jan

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Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure cap... von Fagerlind, M., Allerstam, F., Sveinbjörnsson, E. Ö., Rorsman, N., Kakanakova-Georgieva, A., Lundskog, A., Forsberg, U., Janzén, E.

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High Channel Mobility 4H-SiC MOSFETs von Gudjónsson, G., Jos, R., Nilsson, Per Åke, Allerstam, Fredrik, Sveinbjörnsson, E.Ö., Rödle, T., Ólafsson, H.Ö., Zirath, Herbert

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SiC Diode with Vertical Superjunction Realized Using Channeled Implant and Multi-Step Epitaxial Growth von Wada, Ryota, Kuroi, Takashi, Maloušek, Roman, Sunkari, Swapna, Allerstam, Fredrik, Justice, Joshua, Chochol, Jan, Franchi, Jimmy, Domeij, Martin, Das, Hrishikesh, Gumaelius, Krister

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H3TRB Test on 650 V SiC JBS Diodes von Zorn, Christian, Hanf, Michael, Neyer, Thomas, Hoffmann, Felix, Allerstam, Fredrik, Kaminski, Nando, Konstantinov, Andrei

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Effect of Phosphorus Doped Poly Annealing on Threshold Voltage Stability and Thermal Oxide Reliability in 4H-SiC MOSFET von Park, Kyeong Seok, Seo, Young Ho, Allerstam, Fredrik, Domeij, Martin, Neyer, Thomas, Lee, Taeseop, Lee, Kwang Won

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Detection of Crystal Defects in High Doped Epitaxial Layers and Substrates by Photoluminescence von Allerstam, Fredrik, Das, Hrishikesh, Domeij, Martin, Sunkari, Swapna, Neyer, Thomas, Konstantinov, Andrei, Naas, Hans

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Time Resolved Gate Oxide Stress of 4H-SiC Planar MOSFETs and NMOS Capacitors von Allerstam, Fredrik, Domeij, Martin, Buono, Benedetto, Gumaelius, Krister

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Analysis of interface trap density and channel mobility in 4H-SiC NMOS capacitors and lateral MOSFETs von Domeij, M., Franchi, J., Gumaelius, K., Lee, K., Allerstam, F.

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Evaluation of the Effect of Ultraviolet Light Excitation during Characterization of Silicon Carbide Epitaxial Layers von Allerstam, Fredrik, Akdik, Oener, Sunkari, Swapna, Konstantinov, Andrei, Gumaelius, Krister, Das, Hrishikesh, Svedberg, Jan Olov

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Silicon Carbide Schottky Rectifiers with Improved Avalanche Ruggedness von Young, Sungmo, Allerstam, Fredrik, Lee, Brian, Neyer, Thomas, Konstantinov, Andrei, Jinman, Song, Akram, Sal

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A strong reduction in the density of near-interface traps at the SiO2∕4H-SiC interface by sodium enhanced oxidation von Allerstam, F., Ólafsson, H. Ö., Gudjónsson, G., Dochev, D., Sveinbjörnsson, E. Ö., Rödle, T., Jos, R.

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(Invited) Characterization of UV Excitation Accelerated Material Changes on as-Grown SiC Epitaxial Layers and Their Impact on Defect Detection von Das, Hrishikesh, Sunkari, Swapna, Justice, Joshua, Konstantinov, Andrei, Gumaelius, Krister, Svedberg, Jan-Olov, Allerstam, Fredrik

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Trap and Inversion Layer Mobility Characterization Using Hall Effect in Silicon Carbide-Based MOSFETs With Gate Oxides Grown by Sodium Enhanced Oxidation von Tilak, V., Matocha, K., Dunne, G., Allerstam, F., Sveinbjornsson, E.O.

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(Invited) Enabling SiC Yield and Reliability through Epitaxy and Characterization von Das, Hrishikesh, Sunkari, Swapna, Domeij, Martin, Konstantinov, Andrei, Allerstam, Fredrik, Neyer, Thomas

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1200-V 5.2-m Omega center dot cm(2) 4H-SiC BJTs with a high common-emitter current gain von Lee, Hyung-Seok, Domeij, Martin, Zetterling, Carl-Mikael, Östling, Mikael, Allerstam, Fredrik, Sveinbjörnsson, Einar Ö.

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Sodium Enhanced Oxidation: Absence of Shallow Interface Traps after Removal of Sodium Ions from the SiO sub(2)/4H-SiC Interface von Hermannsson, Petur Gordon, Allerstam, Fredrik, Hauksson, Sigtryggur, Sveinbjornsson, Einar O

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Stability of Current Gain in SiC BJTs von Allerstam, Fredrik, Das, Hrishikesh, Buono, Benedetto, Domeij, Martin, Gumaelius, Krister, Neyer, Thomas, Konstantinov, Andrei

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