Al-rich AlGaN high electron mobility transistor gate metallization study up to 600 °C in air von Klein, B. A., Allerman, A. A., Armstrong, A. M.

Volltext

An AlN/Al0.85Ga0.15N high electron mobility transistor von Baca, Albert G., Armstrong, Andrew M., Allerman, Andrew A., Douglas, Erica A., Sanchez, Carlos A., King, Michael P., Coltrin, Michael E., Fortune, Torben R., Kaplar, Robert J.

Volltext

Influence of optical polarization on the improvement of light extraction efficiency from reflective scattering structures in AlGaN ultraviolet light-emitting diodes von Wierer, J. J., Allerman, A. A., Montaño, I., Moseley, M. W.

Volltext

Strain relaxation in AlGaN multilayer structures by inclined dislocations von Follstaedt, D. M., Lee, S. R., Allerman, A. A., Floro, J. A.

Volltext

Strong coupling in the sub-wavelength limit using metamaterial nanocavities von Benz, A., Campione, S., Liu, S., Montaño, I., Klem, J.F., Allerman, A, Wendt, J.R., Sinclair, M.B., Capolino, F., Brener, I.

Volltext

Polarization-induced electrical conductivity in ultra-wide band gap AlGaN alloys von Armstrong, Andrew M., Allerman, Andrew A.

Volltext

Tunnel-injected sub-260 nm ultraviolet light emitting diodes von Zhang, Yuewei, Krishnamoorthy, Sriram, Akyol, Fatih, Bajaj, Sanyam, Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., Rajan, Siddharth

Volltext

Size dictated thermal conductivity of GaN von Beechem, Thomas E., McDonald, Anthony E., Fuller, Elliot J., Talin, A. Alec, Rost, Christina M., Maria, Jon-Paul, Gaskins, John T., Hopkins, Patrick E., Allerman, Andrew A.

Volltext

Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs von Zhang, Yuewei, Krishnamoorthy, Sriram, Akyol, Fatih, Johnson, Jared M., Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., Hwang, Jinwoo, Rajan, Siddharth

Volltext

Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions von Zhang, Yuewei, Krishnamoorthy, Sriram, Akyol, Fatih, Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., Rajan, Siddharth

Volltext

Ohmic contacts to Al‐rich AlGaN heterostructures von Douglas, E. A., Reza, S., Sanchez, C., Koleske, D., Allerman, A., Klein, B., Armstrong, A. M., Kaplar, R. J., Baca, A. G.

Volltext

Electrical characterization of n-type Al0.30Ga0.70N Schottky diodes von Arehart, A. R., Allerman, A. A., Ringel, S. A.

Volltext

High voltage and high current density vertical GaN power diodes von Armstrong, A.M, Allerman, A.A, Fischer, A.J, King, M.P, van Heukelom, M.S, Moseley, M.W, Kaplar, R.J, Wierer, J.J, Crawford, M.H, Dickerson, J.R

Volltext

Effect of thickness and carrier density on the optical polarization of Al0.44Ga0.56N/Al0.55Ga0.45N quantum well layers von Wierer, J. J., Montaño, I., Crawford, M. H., Allerman, A. A.

Volltext

Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers von Lee, S. R., West, A. M., Allerman, A. A., Waldrip, K. E., Follstaedt, D. M., Provencio, P. P., Koleske, D. D., Abernathy, C. R.

Volltext

X-ray topography characterization of gallium nitride substrates for power device development von Raghothamachar, Balaji, Liu, Yafei, Peng, Hongyu, Ailihumaer, Tuerxun, Dudley, Michael, Shahedipour-Sandvik, F. Shadi, Jones, Kenneth A., Armstrong, Andrew, Allerman, Andrew A., Han, Jung, Fu, Houqiang, Fu, Kai, Zhao, Yuji

Volltext

Synchrotron X-ray topography characterization of high quality ammonothermal-grown gallium nitride substrates von Liu, Yafei, Raghothamachar, Balaji, Peng, Hongyu, Ailihumaer, Tuerxun, Dudley, Michael, Collazo, Ramon, Tweedie, James, Sitar, Zlatko, Shadi Shahedipour-Sandvik, F., Jones, Kenneth A., Armstrong, Andrew, Allerman, Andrew A., Grabianska, Karolina, Kucharski, Robert, Bockowski, Michal

Volltext

Investigation of dry-etch-induced defects in >600 V regrown, vertical, GaN, p-n diodes using deep-level optical spectroscopy von Pickrell, G. W., Armstrong, A. M., Allerman, A. A., Crawford, M. H., Glaser, C. E., Kempisty, J., Abate, V. M.

Volltext

Proton irradiation effects on minority carrier diffusion length and defect introduction in homoepitaxial and heteroepitaxial n-GaN von Collins, K. C., Armstrong, A. M., Allerman, A. A., Vizkelethy, G., Van Deusen, S. B., Léonard, F., Talin, A. A.

Volltext

Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes von Zhang, Yuewei, Krishnamoorthy, Sriram, Akyol, Fatih, Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., Rajan, Siddharth

Volltext