MOSFET Performance Scaling-Part I: Historical Trends von Khakifirooz, Ali, Antoniadis, Dimitri A.

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Introduction to the Special Section on the 2019 IEEE S3S Conference von Khakifirooz, Ali, Sugii, Nobuyuki

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Introduction to the Special Section on the 2018 IEEE S3S Conference von Khakifirooz, Ali, Sugii, Nobuyuki

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Scalability of Extremely Thin SOI (ETSOI) MOSFETs to Sub-20-nm Gate Length von Khakifirooz, A., Kangguo Cheng, Reznicek, A., Adam, T., Loubet, N., Hong He, Kuss, J., Juntao Li, Kulkarni, P., Ponoth, S., Sreenivasan, R., Qing Liu, Doris, B., Shahidi, G.

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Fully depleted SOI (FDSOI) technology von Cheng, Kangguo, Khakifirooz, Ali

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Aggressively Scaled Strained-Silicon-on-Insulator Undoped-Body High- \kappa/Metal-Gate nFinFETs for High-Performance Logic Applications von Maitra, K, Khakifirooz, A, Kulkarni, P, Basker, V S, Faltermeier, J, Jagannathan, H, Adhikari, H, Chun-Chen Yeh, Klymko, N R, Saenger, K, Standaert, T, Miller, R J, Doris, B, Paruchuri, V K, McHerron, D, O'Neil, J, Leobundung, E, Huiming Bu

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A Simple Semiempirical Short-Channel MOSFET Current-Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters von Khakifirooz, A., Nayfeh, O.M., Antoniadis, D.

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Introduction to the Special Section on the 2017 IEEE S3S Conference von Khakifirooz, Ali, Sugii, Nobuyuki

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Fully depleted SOI （FDSOI） technology von Kangguo CHENG Ali KHAKIFIROOZ

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MOSFET Performance Scaling-Part II: Future Directions von Khakifirooz, A., Antoniadis, D.A.

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A review of the mechanical stressors efficiency applied to the ultra-thin body & buried oxide fully depleted silicon on insulator technology von Morin, Pierre, Maitrejean, Sylvain, Allibert, Frederic, Augendre, Emmanuel, Liu, Qing, Loubet, Nicolas, Grenouillet, Laurent, Pofelski, Alexandre, Chen, Kangguo, Khakifirooz, Ali, Wacquez, Romain, Reboh, Shay, Bonnevialle, Aurore, le Royer, Cyrille, Morand, Yves, Kanyandekwe, Joel, Chanemougamme, Daniel, Mignot, Yann, Escarabajal, Yann, Lherron, Benoit, Chafik, Fadoua, Pilorget, Sonia, Caubet, Pierre, Vinet, Maud, Clement, Laurent, Desalvo, Barbara, Doris, Bruce, Kleemeier, Walter

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A 1.67Tb, 5b/Cell Flash Memory Fabricated in 192-Layer Floating Gate 3D-nand Technology and Featuring a 23.3 Gb/mm 2 Bit Density von Khakifirooz, Ali, Anaya, Eduardo, Balasubrahmanyam, Sriram, Bennett, Geoff, Castro, Daniel, Egler, John, Fan, Kuangchan, Ferdous, Rifat, Ganapathi, Kartik, Guzman, Omar, Ha, Chang Wan, Haque, Rezaul, Harish, Vinaya, Jalalifar, Majid, Jungroth, Owen W., Kang, Sung-Taeg, Karbasian, Golnaz, Kim, Jee-Yeon, Li, Siyue, Madraswala, Aliasgar S., Maddukuri, Srivijay, Mohammed, Amr, Mookiah, Shanmathi, Nagabhushan, Shashi, Ngo, Binh, Patel, Deep, Poosarla, Sai Kumar, Prabhu, Naveen V., Quiroga, Carlos, Rajwade, Shantanu, Rahman, Ahsanur, Shah, Jalpa, Shenoy, Rohit S., Menson, Ebenezer Tachie, Tankasala, Archana, Thirumala, Sandeep Krishna, Upadhyay, Sagar, Upadhyayula, Krishnasree, Velasco, Ashley, Vemula, Nanda Kishore Babu, Venkataramaiah, Bhaskar, Zhou, Jiantao, Pathak, Bharat M., Kalavade, Pranav

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A 1.67Tb, 5b/Cell Flash Memory Fabricated in 192-Layer Floating Gate 3D-NAND Technology and Featuring a 23.3 Gb/mm2 Bit Density von Khakifirooz, Ali, Anaya, Eduardo, Balasubrahmanyam, Sriram, Bennett, Geoff, Castro, Daniel, Egler, John, Fan, Kuangchan, Ferdous, Rifat, Ganapathi, Kartik, Guzman, Omar, Ha, Chang Wan, Haque, Rezaul, Harish, Vinaya, Jalalifar, Majid, Jungroth, Owen W., Kang, Sung-Taeg, Karbasian, Golnaz, Kim, Jee-Yeon, Li, Siyue, Madraswala, Aliasgar S., Maddukuri, Srivijay, Mohammed, Amr, Mookiah, Shanmathi, Nagabhushan, Shashi, Ngo, Binh, Patel, Deep, Poosarla, Sai Kumar, Prabhu, Naveen V., Quiroga, Carlos, Rajwade, Shantanu, Rahman, Ahsanur, Shah, Jalpa, Shenoy, Rohit S., Menson, Ebenezer Tachie, Tankasala, Archana, Thirumala, Sandeep Krishna, Upadhyay, Sagar, Upadhyayula, Krishnasree, Velasco, Ashley, Vemula, Nanda Kishore Babu, Venkataramaiah, Bhaskar, Zhou, Jiantao, Pathak, Bharat M., Kalavade, Pranav

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High-Performance Partially Depleted SOI PFETs With In Situ Doped SiGe Raised Source/Drain and Implant-Free Extension von Khakifirooz, Ali, Kangguo Cheng, Jin Cai, Kimball, Anne, Kulkarni, Pranita, Reznicek, Alexander, Adam, Thomas, Edge, Lisa, Huiming Bu, Doris, Bruce, Shahidi, Ghavam

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Transistor Performance Scaling: The Role of Virtual Source Velocity and Its Mobility Dependence von Khakifirooz, A., Antoniadis, D.A.

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Hole Transport in Strained and Relaxed SiGe Channel Extremely Thin SOI MOSFETs von Khakifirooz, Ali, Kangguo Cheng, Loubet, Nicolas, Nagumo, Toshiharu, Reznicek, Alexander, Qing Liu, Levin, Theodore M., Edge, Lisa F., Hong He, Kuss, James, Allibert, Frederic, Bich-Yen Nguyen, Doris, Bruce, Shahidi, Ghavam

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(Invited) Silicon Germanium FinFET Device Physics, Process Integration and Modeling Considerations von Lu, Darsen, Morin, Pierre, Sahu, Bhagawan, Hook, Terence B, Hashemi, Pouya, Scholze, Andreas, Kim, Bomsoo, Kerber, Pranita, Khakifirooz, Ali, Oldiges, Philip, Rim, Ken, Doris, Bruce

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On the electron mobility in ultrathin SOI and GOI von Khakifirooz, A., Antoniadis, D.A.

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Preparation, characterization and photocatalytic activity of a novel nanostructure ZnO composite film derived sol-gel process using organic binder materials von Nasr-Esfahani, Mojtaba, Khakifiroz, Ali, Tavakoli, Nahid, Soleimani, Mohammad Hassan

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Scalability of hole mobility enhancement in biaxially strained ultrathin body SOI von Khakifirooz, A., Antoniadis, D.A.

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