Sol–gel matrix for YAG:Ce phosphors in pc-LEDs von Kräuter, Gertrud, Eberhardt, Angela, Peskoller, Florian, Güldal, Nusret Sena, Lell, Alfred, Ritasalo, Riina, Pilvi, Tero, Römer, Manfred, Domann, Gerhard, Löbmann, Peer

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Study of defects and lifetime of green InGaN laser diodes von Strauss, Uwe, Lermer, Teresa, Müller, Jens, Hager, Thomas, Brüderl, Georg, Avramescu, Adrian, Lell, Alfred, Eichler, Christoph

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Measurement and simulation of filamentation in (Al,In)GaN laser diodes von Scholz, Dominik, Braun, Harald, Schwarz, Ulrich T, Brüninghoff, Stefanie, Queren, Désirée, Lell, Alfred, Strauss, Uwe

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Facet degradation of GaN heterostructure laser diodes von Schoedl, Thomas, Schwarz, Ulrich T., Kümmler, Volker, Furitsch, Michael, Leber, Andreas, Miler, Andreas, Lell, Alfred, Härle, Volker

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Substrate Modes of (Al,In)GaN Semiconductor Laser Diodes on SiC and GaN Substrates von Laino, V., Roemer, F., Witzigmann, B., Lauterbach, C., Schwarz, U.T., Rumbolz, C., Schillgalies, M.O., Furitsch, M., Lell, A., Harle, V.

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Beam quality of blue InGaN laser for projection von Strauss, Uwe, Eichler, Christoph, Rumbolz, Christian, Lell, Alfred, Lutgen, Stephan, Tautz, Sönke, Schillgalies, Marc, Brüninghoff, Stefanie

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By-Emitter Analysis of 450-nm Emitting High-Power Diode Laser Bars von Mahler, Felix, Kernke, Robert, Tomm, Jens W., Konig, Harald, Stojetz, Bernhard, Ali, Muhammad, Lell, Alfred

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Influence of ridge geometry on lateral mode stability of (Al,In)GaN laser diodes von Schwarz, Ulrich T., Pindl, Markus, Sturm, Evi, Furitsch, Michael, Leber, Andreas, Miller, Stephan, Lell, Alfred, Härle, Volker

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Back Cover: Study of defects and lifetime of green InGaN laser diodes (Phys. Status Solidi A 3/2012) von Strauss, Uwe, Lermer, Teresa, Müller, Jens, Hager, Thomas, Brüderl, Georg, Avramescu, Adrian, Lell, Alfred, Eichler, Christoph

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8 W single-emitter InGaN laser in pulsed operation von Brüninghoff, Stefanie, Eichler, Christoph, Tautz, Sönke, Lell, Alfred, Sabathil, Matthias, Lutgen, Stephan, Strauß, Uwe

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Revealing the Defect Structure in Laterally Overgrown GaN Stripes Utilizing Photoelectrochemical Etching Techniques von Riedl, Thomas, Hitzel, Frank, Hangleiter, Andreas, Miller, Stephan, Weimar, Andreas, Brüderl, Georg, Lell, Alfred, Härle, Volker

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Multidimensional near- and far-field measurements of broad ridge (Al,In)GaN laser diodes von Rogowsky, Stephan, Braun, Harald, Schwarz, Ulrich T., Brüninghoff, Stefanie, Lell, Alfred, Strauß, Uwe

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Supermodes in Broad Ridge (Al,In)GaN Laser Diodes von Braun, H., Rogowsky, S., Schwarz, U.T., Bruninghoff, S., Lell, A., Lutgen, S., Strauss, U.

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OPTOELECTRONIC SEMICONDUCTOR LASER COMPONENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR LASER COMPONENT von König, Harald, Lell, Alfred

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OPTOELECTRONIC COMPONENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT von LELL, Alfred, GERHARD, Sven

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EDGE-EMITTING SEMICONDUCTOR LASER DIODES AND METHOD FOR PRODUCING A PLURALITY OF EDGE-EMITTING SEMICONDUCTOR LASER DIODES von LELL, Alfred, EICHLER, Christoph, GERHARD, Sven

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METHOD FOR PRODUCING AT LEAST ONE LASER CHIP, AND LASER CHIP von LELL, Alfred, EICHLER, Christoph, GERHARD, Sven

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Observation of temperature-independent longitudinal-mode patterns in violet-blue InGaN-based laser diodes von Eichler, C., Schad, S.-S., Scholz, F., Hofstetter, D., Miller, S., Weimar, A., Lell, A., Harle, V.

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Optoelectronic component having a layer with lateral offset inclined side surfaces von Lell, Alfred, Gerhard, Sven

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Blue Superluminescent Light-Emitting Diodes with Output Power above 100 mW for Picoprojection von Kopp, Fabian, Eichler, Christoph, Lell, Alfred, Tautz, Sönke, Ristić, Jelena, Stojetz, Bernhard, Hö${\ss}$, Christine, Weig, Thomas, Schwarz, Ulrich T, Strauss, Uwe

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