Growth of Millimeter-Sized Graphene Single Crystals on Al2O3(0001)/Pt(111) Template Wafers Using Chemical Vapor Deposition von Verguts, Ken, Defossez, Yves, Leonhardt, Alessandra, De Messemaeker, Joke, Schouteden, Koen, Van Haesendonck, Chris, Huyghebaert, Cedric, De Gendt, Stefan, Brems, Steven

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Relation between film thickness and surface doping of MoS2 based field effect transistors von Lockhart de la Rosa, César J., Arutchelvan, Goutham, Leonhardt, Alessandra, Huyghebaert, Cedric, Radu, Iuliana, Heyns, Marc, De Gendt, Stefan

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Understanding ambipolar transport in MoS2 field effect transistors: the substrate is the key von Mootheri, Vivek, Leonhardt, Alessandra, Verreck, Devin, Asselberghs, Inge, Huyghebaert, Cedric, de Gendt, Stefan, Radu, Iuliana, Lin, Dennis, Heyns, Marc

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Material-Selective Doping of 2D TMDC through AlxOy Encapsulation von Leonhardt, Alessandra, Chiappe, Daniele, Afanas'ev, Valeri V, El Kazzi, Salim, Shlyakhov, Ilya, Conard, Thierry, Franquet, Alexis, Huyghebaert, Cedric, de Gendt, Stefan

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Improving MOCVD MoS2 Electrical Performance: Impact of Minimized Water and Air Exposure Conditions von Leonhardt, Alessandra, Chiappe, Daniele, Asselberghs, Inge, Huyghebaert, Cedric, Radu, Iuliana, De Gendt, Stefan

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Multicomponent Covalent Chemical Patterning of Graphene von Rodríguez González, Miriam C, Leonhardt, Alessandra, Stadler, Hartmut, Eyley, Samuel, Thielemans, Wim, De Gendt, Stefan, Mali, Kunal S, De Feyter, Steven

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Devices and Circuits Using Novel 2-D Materials: A Perspective for Future VLSI Systems von Resta, Giovanni V., Leonhardt, Alessandra, Balaji, Yashwanth, De Gendt, Stefan, Gaillardon, Pierre-Emmanuel, De Micheli, Giovanni

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Material and device aspects of 2D transition metal dichalcogenides von Leonhardt, Alessandra

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Understanding ambipolar transport in MoS 2 field effect transistors: the substrate is the key von Mootheri, Vivek, Leonhardt, Alessandra, Verreck, Devin, Asselberghs, Inge, Huyghebaert, Cedric, de Gendt, Stefan, Radu, Iuliana, Lin, Dennis, Heyns, Marc

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Understanding ambipolar transport in MoS2 field effect transistors: the substrate is the key von Mootheri, Vivek, Leonhardt, Alessandra, Verreck, Devin, Asselberghs, Inge, Huyghebaert, Cedric, de Gendt, Stefan, Radu, Iuliana, Lin, Dennis, Heyns, Marc

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Understanding ambipolar transport in MoS2 field effect transistors: the substrate is the key von Mootheri, Vivek, Leonhardt, Alessandra, Verreck, Devin, Asselberghs, Inge, Huyghebaert, Cedric, de Gendt, Stefan, Radu, Iuliana, Lin, Dennis, Heyns, Marc

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Layer-controlled epitaxy of 2D semiconductors: bridging nanoscale phenomena to wafer-scale uniformity von Chiappe, Daniele, Ludwig, Jonathan, Leonhardt, Alessandra, El Kazzi, Salim, Nalin Mehta, Ankit, Nuytten, Thomas, Celano, Umberto, Sutar, Surajit, Pourtois, Geoffrey, Caymax, Matty, Paredis, Kristof, Vandervorst, Wilfried, Lin, Dennis, De Gendt, Stefan, Barla, Kathy, Huyghebaert, Cedric, Asselberghs, Inge, Radu, Iuliana

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Multicomponent Covalent Chemical Patterning of Graphene von Gonzalez, Miriam C. Rodriguez, Leonhardt, Alessandra, Stadler, Hartmut, Eyley, Samuel, Thielemans, Wim, De Gendt, Stefan, Mali, Kunal S, De Feyter, Steven

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Devices and Circuits Using Novel 2-D Materials: A Perspective for Future VLSI Systems von Resta, Giovanni V, Leonhardt, Alessandra, Balaji, Yashwanth, De Gendt, Stefan, Gaillardon, Pierre-Emmanuel, De Micheli, Giovanni

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Graphene based Van der Waals contacts on MoS2 field effect transistors von Mootheri, Vivek, Arutchelvan, Goutham, Banerjee, Sreetama, Sutar, Surajit, Leonhardt, Alessandra, Boulon, Marie-Emmanuelle, Huyghebaert, Cedric, Houssa, Michel, Asselberghs, Inge, Radu, Iuliana, Heyns, Marc, Lin, Dennis

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Improving MOCVD MoS 2 Electrical Performance: Impact of Minimized Water and Air Exposure Conditions von Leonhardt, Alessandra, Chiappe, Daniele, Asselberghs, Inge, Huyghebaert, Cedric, Radu, Iuliana, De Gendt, Stefan

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Improving MOCVD MoS2 Electrical Performance: Impact of Minimized Water and Air Exposure Conditions von Leonhardt, Alessandra, Chiappe, Daniele, Asselberghs, Inge, Huyghebaert, Cedric, Radu, Iuliana, De Gendt, Stefan

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Material-Selective Doping of 2D TMDC through AlxOy Encapsulation von Leonhardt, Alessandra, Chiappe, Daniele, Afanas'ev, Valeri V, El Kazzi, Salim, Shlyakhov, Ilya, Conard, Thierry, Franquet, Alexis, Huyghebaert, Cedric, de Gendt, Stefan

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Material-Selective Doping of 2D TMDC through Al x O y Encapsulation von Leonhardt, Alessandra, Chiappe, Daniele, Afanas’ev, Valeri V, El Kazzi, Salim, Shlyakhov, Ilya, Conard, Thierry, Franquet, Alexis, Huyghebaert, Cedric, de Gendt, Stefan

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The Role of Nonidealities in the Scaling of MoS2 FETs von Verreck, Devin, Arutchelvan, Goutham, Lockhart De La Rosa, Cesar J., Leonhardt, Alessandra, Chiappe, Daniele, Lu, Anh Khoa Augustin, Pourtois, Geoffrey, Matagne, Philippe, Heyns, Marc M., De Gendt, Stefan, Mocuta, Anda, Radu, Iuliana P.

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