Position-controlled growth of GaN nanowires and nanotubes on diamond by molecular beam epitaxy von Schuster, Fabian, Hetzl, Martin, Weiszer, Saskia, Garrido, Jose, De La Mata, Maria, Magen Dominguez, Cesar, Arbiol i Cobos, Jordi, Stutzmann, Martin, ALBA Laboratori de Llum de Sincrotró

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Position-controlled growth of GaN nanowires and nanotubes on diamond by molecular beam epitaxy von Schuster, Fabian, Hetzl, Martin, Weiszer, Saskia, Garrido, Jose, De La Mata, Maria, Magen Dominguez, Cesar, Arbiol i Cobos, Jordi, Stutzmann, Martin, ALBA Laboratori de Llum de Sincrotró

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Resonant tunnelling features in a suspended silicon nanowire single-hole transistor von Llobet Sixto, Jordi, Krali, Emiljana, Wang, Chen, Arbiol i Cobos, Jordi, Jones, Mervyn E, Pérez Murano, Francesc, Durrani, Zahid A. K, ALBA Laboratori de Llum de Sincrotró

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