Selective area epitaxy of GaAs using GaAs oxide as a mask von HIRATANI, Y, OHKI, Y, SUGIMOTO, Y, AKITA, K, TANEYA, M, HIDAKA, H

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Development of Precise Telerobotic System for Unmanned Spacecraft von Machida, Kazuo, Mikami, Tatsuo, Akita, Kenzo

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Space Experiment of Sensor-Fused Telerobotics for High Precision Tasks von Machida, Kazuo, Toda, Yoshitsugu, Moriya, Masayoshi, Tsuda, Naozumi, Akita, Kenzo

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Fine pattern formation of gallium arsenide by in situ electron-beam lithography using an ultrathin surface oxide as a resist von TANEYA, M, SUGIMOTO, Y, HIDAKA, H

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Space Experiment Evaluation of Advanced Robotic Hand System Boarded on ETS-VII von MACHIDA, Kazuo, AKITA, Kenzo, OHNO, Keitaro, MORIYA, Masayoshi, NISHIDA, Hirotaka, OHSAWA, Tsutomu

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Determination of In-Ga-As phase diagram at 650 °C and LPE growth of lattice-matched In0.53Ga0.47As on InP von Nakajima, Kazuo, Tanahashi, Toshiyuki, Akita, Kenzo, Yamaoka, Toyoshi

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Development of 3-Fingers Multi-Sensory Hand for Space Robot von Murase, Yuichi, Ishii, Satoshi, Komada, Satoru, Machida, Kazuo, Akita, Kenzo

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Substrate Orientation Dependence of Growth Rate of InGaAs / InP Grown by Liquid Phase Epitaxy von Nakajima, Kazuo, Akita, Kenzo

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Phase Diagram of the In‐Ga‐As‐P Quaternary System and LPE Growth Conditions for Lattice Matching on InP Substrates von Nakajima, Kazuo, Kusunoki, Toshihiro, Akita, Kenzo, Kotani, Tsuyoshi

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Direct liquid phase epitaxial growth of high-quality InP on (111)A oriented In0.53Ga0.47As von Nakajima, Kazuo, Yamazaki, Susumu, Akita, Kenzo

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Observation of etch pits produced in InP by new etchants von Akita, Kenzo, Kusunoki, Toshihiro, Komiya, Satoshi, Kotani, Tsuyoshi

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Calculation of III-III-V-V quaternary layer thickness grown by liquid phase epitaxy - application to InGaAsP von Nakajima, Kazuo, Yamazaki, Susumu, Akita, Kenzo

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The effects of impurities and cooling rates on the surface morphology of LPE grown InP von Tanahashi, Toshiyuki, Akita, Kenzo

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Misfit dislocations in InP/InGaAsP/InP double-heterostructure wafers grown by liquid phase epitaxy von Yamazaki, Susumu, Kishi, Yutaka, Nakajima, Kazuo, Yamaguchi, Akio, Akita, Kenzo

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Transmission electron microscope observation of dark-spot defects in InGaAsP/InP double-heterostructure light-emitting diodes aged at high temperature von Ueda, Osamu, Yamakoshi, Shigenobu, Komiya, Satoshi, Akita, Kenzo, Yamaoka, Toyoshi

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Photoluminescence Intensity in InGaAsP/InP Double-Heterostructures von Yamaguchi, Akio, Komiya, Satoshi, Umebu, Itsuo, Wada, Osamu, Akita, Kenzo

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Calculation of impurity concentrations in LPE InP layers von TAKANOHASHI, T, KOMIYA, S, YAMAZAKI, S, UMEBU, I, AKITA, K

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The effect of growth temperature and impurity doping on composition of LPE InGaAsP on InP von Kusunoki, Toshihiro, Akita, Kenzo, Komiya, Satoshi, Nishitani, Yorimitsu

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Development and Space Operation of Advanced Robotic Hand System von Machida, Kazuo, Nishida, Hirotaka, Akita, Kenzo

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Deformation of V-grooves on InP substrate by heat treatment von Tanahashi, Toshiyuki, Ushijima, Ichiro, Umebu, Itsuo, Nakai, Sabro, Nishitani, Yorimitsu, Akita, Kenzo

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