Quantitative strain analysis of surfaces and interfaces using extremely asymmetric x-ray diffraction von Akimoto, Koichi, Emoto, Takashi

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Structure of the quasi-one-dimensional Si(553)-Au surface: Gold dimer row and silicon honeycomb chain von Voegeli, Wolfgang, Takayama, Toru, Shirasawa, Tetsuroh, Abe, Makoto, Kubo, Kimitaka, Takahashi, Toshio, Akimoto, Koichi, Sugiyama, Hiroshi

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The measurement of GaN crystal surfaces with the X-ray crystal truncation rod scattering von Umino, Yuka, Kitajima, Yuri, Akimoto, Koichi

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Crystal orientation changes of Ag thin films on the Si(111) substrate due to tribo-assisted recrystallization von Akimoto, Koichi, Fukagawa, Koji, Goto, Minoru, Honda, Fumihiro

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Structure of the oxidized 4H–SiC(0 0 0 1)-3 × 3 surface von Voegeli, Wolfgang, Akimoto, Koichi, Urata, Tomoaki, Nakatani, Shinichiro, Sumitani, Kazushi, Takahashi, Toshio, Hisada, Yoshiyuki, Mitsuoka, Yoshihito, Mukainakano, Shinichi, Sugiyama, Hiroshi, Zhang, Xiao-Wei, Kawata, Hiroshi

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Study of the surface structure of Si(1 1 1)-6 × 1(3 × 1)-Ag using X-ray crystal truncation rod scattering von Sumitani, Kazushi, Masuzawa, Kosuke, Hoshino, Takashi, Nakatani, Sinichiro, Takahashi, Toshio, Tajiri, Hiroo, Akimoto, Koichi, Sugiyama, Hiroshi, Zhang, Xiao-Wei, Kawata, Hiroshi

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SiO2/Si interface structures and reliability characteristics von HASEGAWA, E, ISHITANI, A, AKIMOTO, K, TSUKIJI, M, OHTA, N

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Quantitative evaluation of strain near reconstructed Si surfaces von EMOTO, Takashi, AKIMOTO, Koichi, ISHIKAWA, Yuya, ICHIMIYA, Ayahiko

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24pPSA-34 Theoretical study of the initial oxidation of the SiC(0001) surface von VOEGELI, Wolfgang, TAKAHASHI, Toshio, AKIMOTO, Koichi

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High-k Gate Dielectric Films Studied by Extremely Asymmetric X-ray Diffraction and X-ray Photoelectron Spectroscopy von Ito, Yuki, Akimoto, Koichi, Yoshida, Hironori, Emoto, Takashi, Kobayashi, Daisuke, Hirose, Kazuyuki

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Surface X-ray Diffraction Study of the Metal-Insulator Transition on the Si(553)-Au Surface von Voegeli, Wolfgang, Takayama, Toru, Kubo, Kimitaka, Abe, Makoto, Iwasawa, Yusaku, Shirasawa, Tetsuroh, Takahashi, Toshio, Akimoto, Koichi, Sugiyama, Hiroshi, Tajiri, Hiroo, Sakata, Osami

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Quantitative Strain Analysis of Surfaces and Interfaces Using Extremely Asymmetric X-Ray Diffraction von Akimoto, Koichi, Emoto, Takashi

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Structure of the SiC(0001)-[inline image] x [inline image]-R30 surface after initial oxidation von Voegeli, Wolfgang, Aoyama, Tomohiro, Akimoto, Koichi, Ichimiya, Ayahiko, Hisada, Yoshiyuki, Mitsuoka, Yoshihito, Mukainakano, Shinichi

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Structure of the SiC(0001)-×-R30° surface after initial oxidation von Voegeli, Wolfgang, Aoyama, Tomohiro, Akimoto, Koichi, Ichimiya, Ayahiko, Hisada, Yoshiyuki, Mitsuoka, Yoshihito, Mukainakano, Shinichi

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Study of lattice distortion by using X-ray indirect reflection von Ochi, Rio, Kumoi, Miho, Miyashita, Haruka, Akimoto, Koichi

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Polarity Determination of GaN Thin Films by Anomalous X-Ray Diffraction von AKIMOTO, Koichi

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Structure of the SiC(0001)-V3 × V3-R30° surface after initial oxidation von VOEGELI, Wolfgang, AOYAMA, Tomohiro, AKIMOTO, Koichi, ICHIMIYA, Ayahiko, HISADA, Yoshiyuki, MITSUOKA, Yoshihito, MUKAINAKANO, Shinichi

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Structure of the SiC(0001)- 3 × 3 -R30° surface after initial oxidation von Voegeli, Wolfgang, Aoyama, Tomohiro, Akimoto, Koichi, Ichimiya, Ayahiko, Hisada, Yoshiyuki, Mitsuoka, Yoshihito, Mukainakano, Shinichi

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Energy-Dispersive Grazing Incidence Diffraction with Synchrotron Radiation White X-Rays of Very Thin Polycrystalline Silicon Films von TANIKAWA, A, AKIMOTO, K

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Characterization of GaN crystals with the X-ray topography von Kitano, Yuko, Miyakawa, Satoko, Shoro, Mizuki, Akimoto, Koichi

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