Nitrogen and Hydrogen Induced Trap Passivation at the SiO2/4H-SiC Interface von Ahyi, Ayayi Claude, Isaacs-Smith, Tamara, Pantelides, Sokrates T., Williams, John R., Dhar, S., Wang, S.R., Feldman, Leonard C.

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On the anomaly in the electrical characteristics of thin film transistors with multi-layered sol-gel processed ZnO von Mirkhani, Vahid, Yapabandara, Kosala, Wang, Shiqiang, Khanal, Min Prasad, Uprety, Sunil, Sultan, Muhammad Shehzad, Ozden, Burcu, Ahyi, Ayayi Claude, Hamilton, Michael C., Sk, Mobbassar Hassan, Park, Minseo

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High dose gamma irradiation effects on properties of active layers in ZnO thin film transistors von Mirkhani, Vahid, Wang, Shiqiang, Yapabandara, Kosala, Sultan, Muhammad Shehzad, Khanal, Min Prasad, Uprety, Sunil, Ozden, Burcu, Hassani, Ehsan, Schoenek, Benjamin V, Kim, Dong-Joo, Oh, Tae-Sik, Ahyi, Ayayi Claude, Dhar, Sarit, Hamilton, Michael C, Sk, Mobbassar Hassan, Park, Minseo

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Borosilicate Glass (BSG) as Gate Dielectric for 4H-SiC MOSFETs von Zheng, Yong Ju, Dhar, Sarit, Isaacs-Smith, Tamara, Ahyi, Ayayi Claude

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Isotropic Oxidation by Plasma Oxidation and Investigation of RIE Induced Effects for Development of 4H-SiC Trench MOSFETs von Ahyi, Ayayi Claude, Dhar, Sarit, Jayawardena, Asanka, Liu, Gang, Shaw, Rob G.

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Erratum: “Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si” [Ap... von Ozden, Burcu, Yang, Chungman, Tong, Fei, Khanal, Min P., Mirkhani, Vahid, Sk, Mobbassar Hassan, Ahyi, Ayayi Claude, Park, Minseo

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Temperature Dependence of Inversion Layer Carrier Concentration and Hall Mobility in 4H-SiC MOSFETs von Ryu, Sei Hyung, Ahyi, Ayayi Claude, Agarwal, Anant K., Dhar, Sarit, Williams, John R.

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Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si von Ozden, Burcu, Yang, Chungman, Tong, Fei, Khanal, Min P., Mirkhani, Vahid, Sk, Mobbassar Hassan, Ahyi, Ayayi Claude, Park, Minseo

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Channel Mobility Improvement in 4H-SiC MOSFETs Using a Combination of Surface Counter-Doping and NO Annealing von Ahyi, Ayayi Claude, Dhar, Sarit, Feldman, L.C., Jiao, C., Zheng, Y., Modic, Aaron, Liu, Gang

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The Limits of Post Oxidation Annealing in NO von Rozen, John, Ahyi, Ayayi Claude, Zhu, Xing Guang, Williams, John R., Feldman, Leonard C.

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The Effects of Phosphorus at the SiO2/4H-SiC Interface von Ahyi, Ayayi Claude, Issacs-Smith, Tamara, Shen, Xiao, Zhu, Xing Guang, Garfunkel, Eric, Sharma, Yogesh K., Rozen, John, Xu, Yi, Pantelides, Sokrates T., Williams, John R., Feldman, Leonard C.

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Gamma Irradiation Effects on 4H-SiC MOS Capacitors and MOSFETs von Ahyi, Ayayi Claude, Williams, John R., Wang, S.R.

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Growth of ZnO Nanorod Arrays on Flexible Substrates : Effect of Precursor Solution Concentration von Modic, Aaron, Sharma, Yogesh, Thapa, Resham, Wang, Yaqi, Kim, Kyusang, Tong, Fei, Claude Ahyi, Ayayi, Issacs-Smith, Tamara, Williams, John, Ahn, Hosang, Park, Hyejin, Kim, Dong-Joo, Lee, Sungkoo, Lim, Eunhee, Lee, Kyeong K., Park, Minseo

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Composite Ohmic Contacts to SiC von Ahyi, Ayayi Claude, Mohney, S.E., Bozack, M.J., Scofield, James D., Adedeji, A.V., Liu, B., Williams, John R.

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Low temperature impurity doping of silicon carbide von ATABAEV BAKHTIYAR GAFUROVICH, AHYI AYAYI CLAUDE, SALIEV TOJIDDIN MUTALOVICH, MENDIS BALAPUWADUGE SUWAN PATHUM, LI MINGYU, ATABAYEV ILKHAM GAFUROVICH, BAKHRANOV ERKIN NUROVICH, TIN CHIN, ADEDEJI ADETAYO VICTOR

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Low temperature impurity doping of silicon carbide von Tin, Chin-Che, Adedeji, Adetayo Victor, Atabayev, Ilkham Gafurovich, Atabaev, Bakhtiyar Gafurovich, Saliev, Tojiddin Mutalovich, Bakhranov, Erkin Nurovich, Li, Mingyu, Mendis, Balapuwaduge Suwan Pathum, Ahyi, Ayayi Claude

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Low temperature impurity doping of silicon carbide von ATABAEV BAKHTIYAR GAFUROVICH, AHYI AYAYI CLAUDE, SALIEV TOJIDDIN MUTALOVICH, MENDIS BALAPUWADUGE SUWAN PATHUM, LI MINGYU, ATABAYEV ILKHAM GAFUROVICH, BAKHRANOV ERKIN NUROVICH, TIN CHIN, ADEDEJI ADETAYO VICTOR

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