Versatile, High‐Power, Flexible, Stretchable Carbon Nanotube Sheet Heating Elements Tolerant to Mechanical Damage and Severe Deformation von Lee, Yourack, Le, Viet Thong, Kim, Jeong‐Gyun, Kang, Haeyong, Kim, Eun Sung, Ahn, Seung‐Eon, Suh, Dongseok

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Understanding tunneling electroresistance effect through potential profile in Pt/Hf0.5Zr0.5O2/TiN ferroelectric tunnel junction memory von Yoon, Jungkyu, Hong, Seunghyeon, Song, Yong Won, Ahn, Ji-Hoon, Ahn, Seung-Eon

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Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays von Jeon, Sanghun, Ahn, Seung-Eon, Song, Ihun, Kim, Chang Jung, Chung, U-In, Lee, Eunha, Yoo, Inkyung, Nathan, Arokia, Lee, Sungsik, Ghaffarzadeh, Khashayar, Robertson, John, Kim, Kinam

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Comparison of the evolution of internal bias field of doped hafnia ferroelectric capacitors for the field-cycling reliability von Hong, Seunghyeon, Lee, Yoseop, Ahn, Dante, Ahn, Seung-Eon

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Metal Oxide Thin Film Phototransistor for Remote Touch Interactive Displays von Ahn, Seung-Eon, Song, Ihun, Jeon, Sanghun, Jeon, Youg Woo, Kim, Young, Kim, Changjung, Ryu, Byungki, Lee, Je-Hun, Nathan, Arokia, Lee, Sungsik, Kim, Gyu Tae, Chung, U-In

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Origin of High Photoconductive Gain in Fully Transparent Heterojunction Nanocrystalline Oxide Image Sensors and Interconnects von Jeon, Sanghun, Song, Ihun, Lee, Sungsik, Ryu, Byungki, Ahn, Seung-Eon, Lee, Eunha, Kim, Young, Nathan, Arokia, Robertson, John, Chung, U-In

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Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory von Lee, Myoung-Jae, Kim, Sun I., Lee, Chang B., Yin, Huaxiang, Ahn, Seung-Eon, Kang, Bo S., Kim, Ki H., Park, Jae C., Kim, Chang J., Song, Ihun, Kim, Sang W., Stefanovich, Genrikh, Lee, Jung H., Chung, Seok J., Kim, Yeon H., Park, Youngsoo

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Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory von Lee, Myoung-Jae, Han, Seungwu, Jeon, Sang Ho, Park, Bae Ho, Kang, Bo Soo, Ahn, Seung-Eon, Kim, Ki Hwan, Lee, Chang Bum, Kim, Chang Jung, Yoo, In-Kyeong, Seo, David H, Li, Xiang-Shu, Park, Jong-Bong, Lee, Jung-Hyun, Park, Youngsoo

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Highly Stable Artificial Synapses Based on Ferroelectric Tunnel Junctions for Neuromorphic Computing Applications von Song, Sungmun, Ham, Woori, Park, Gyuil, Kho, Wonwoo, Kim, Jisoo, Hwang, Hyunjoo, Kim, Hyo‐Bae, Song, Hyunsun, Ahn, Ji‐Hoon, Ahn, Seung‐Eon

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Exploring Multi‐Bit Logic In‐Memory with Memristive HfO2‐Based Ferroelectric Tunnel Junctions von Wonwoo Kho, Hyunjoo Hwang, Seung‐Eon Ahn

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Compensation Charge Control and Modeling for Reproducing Negative Capacitance Effect of Hafnia Ferroelectric Thin Films von Ahn, Dante, Jung, Moonyoung, Lee, Yoseop, Song, Sungmun, Ham, Woori, Suh, Dongseok, Ahn, Seung‐Eon

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Oxide Semiconductor Memristor‐Based Optoelectronic Synaptic Devices With Quaternary Memory Storage von Kim, Jeong‐Hyeon, Lee, Hye Jin, Kim, Hee‐Jin, Choi, Jongyun, Oh, Jae‐Hyeok, Choi, Dae‐Choul, Byun, Jisu, Ahn, Seung‐Eon, Lee, Sung‐Nam

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Analysis of Polarization Characteristics Change of the Si-doped HfO2 with Temperature Using Impedance Spectroscopy von Jung, Moonyoung, Ahn, Dante, Ahn, Seung-Eon

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A Simple Strategy to Realize Super Stable Ferroelectric Capacitor via Interface Engineering von Kim, Hyo‐Bae, Dae, Kyun Seong, Oh, Youkyoung, Lee, Seung‐Won, Lee, Yoseop, Ahn, Seung‐Eon, Jang, Jae Hyuck, Ahn, Ji‐Hoon

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Origin of the slow photoresponse in an individual sol-gel synthesized ZnO nanowire von Ahn, Seung-Eon, Ji, Hyun Jin, Kim, Kanghyun, Kim, Gyu Tae, Bae, Chang Hyun, Park, Seung Min, Kim, Yong-Kwan, Ha, Jeong Sook

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High-Performance Low-Cost Back-Channel-Etch Amorphous Gallium–Indium–Zinc Oxide Thin-Film Transistors by Curing and Passivation of the Damaged Back Channel von Park, Jae Chul, Ahn, Seung-Eon, Lee, Ho-Nyeon

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High-Performance Nanowire Oxide Photo-Thin Film Transistor von Ahn, Seung-Eon, Jeon, Sanghun, Jeon, Youg Woo, Kim, Changjung, Lee, Myoung-Jae, Lee, Chang-Won, Park, Jongbong, Song, Ihun, Nathan, Arokia, Lee, Sungsik, Chung, U-In

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Improvement of Resistance Change Memory Characteristics in Ferroelectric and Antiferroelectric (like) Parallel Structures von Kho, Wonwoo, Hwang, Hyunjoo, Kim, Jisoo, Park, Gyuil, Ahn, Seung-Eon

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Impact of transparent electrode on photoresponse of ZnO-based phototransistor von Lee, Seunghyup, Ahn, Seung-Eon, Jeon, Yongwoo, Ahn, Ji-Hoon, Song, Ihun, Jeon, Sanghun, Yun, Dong-Jin, Kim, Jungwoo, Choi, Hyung, Chung, U-in, Park, Jaechul

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Yttrium Doping Effects on Ferroelectricity and Electric Properties of As-Deposited Hf1−xZrxO2 Thin Films via Atomic Layer Deposition von Oh, Youkyoung, Lee, Seung Won, Choi, Jeong-Hun, Ahn, Seung-Eon, Kim, Hyo-Bae, Ahn, Ji-Hoon

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