Structural and electrical characteristics of ultra-thin Si-doped GaN film regrown on patterned GaN/sapphire von Shin, Jaehyeok, Noh, Siyun, Lee, Jinseong, Kim, Jin Soo, Choi, Ilgyu, Ahn, Ho-Kyun

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Effects of parasitic gate capacitance and gate resistance on radiofrequency performance in LG = 0.15 μm GaN high‐electron‐mobility transistors for X‐band applications von Chang, Sung‐Jae, Jeong, Hyeon‐Seok, Jung, Hyun‐Wook, Choi, Su‐Min, Choi, Il‐Gyu, Noh, Youn‐Sub, Kim, Seong‐Il, Lee, Sang‐Heung, Ahn, Ho‐Kyun, Kang, Dong Min, Kim, Dae‐Hyun, Lim, Jong‐Won

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Integrated microHall magnetometer to measure the magnetic properties of nanoparticles von Min, Changwook, Park, Jongmin, Mun, Jae Kyoung, Lim, Yongjun, Min, Jouha, Lim, Jong-Won, Kang, Dong-Min, Ahn, Ho-Kyun, Shin, Tae-Hyun, Cheon, Jinwoo, Lee, Hae-Seung, Weissleder, Ralph, Castro, Cesar M, Lee, Hakho

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Effects of DC and AC stress on the VT shift of AlGaN/GaN MIS-HEMTs von Kang, Soo Cheol, Jung, Hyun-Wook, Chang, Sung-Jae, Choi, Ilgyu, Lee, Sang Kyung, Kim, Seung Mo, Lee, Byoung Hun, Ahn, Ho-Kyun, Lim, Jong-Won

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Recess-Etched and Tetramethylammonium Hydroxide-Treated Nanoscale Pattern on AlGaN/GaN High-Electron-Mobility-Transistors for Improved Ohmic Contact von Jung, Hyun-Wook, Chang, Sung-Jae, Ahn, Ho-Kyun, Kim, Haecheon, Lim, Jong-Won, Do, Jae-Won

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GaN MIS-HEMT PA MMICs for 5G Mobile Devices von Kim, Seong-Il, Ahn, Ho-Kyun, Lim, Jong-Won, Lee, Kijun

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The effects of tetramethylammonium hydroxide treatment on the performance of recessed-gate AlGaN/GaN high electron mobility transistors von Do, Jae-Won, Jung, Hyun-Wook, Shin, Min Jeong, Ahn, Ho-Kyun, Kim, Haecheon, Kim, Ryun-Hwi, Cho, Kyu Jun, Chang, Sung-Jae, Min, Byoung-Gue, Yoon, Hyung Sup, Kim, Ji-Heon, Yang, Jin-Mo, Lee, Jung-Hee, Lim, Jong-Won

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C-Band GaN Dual-Feedback Low-Noise Amplifier MMIC with High-Input Power Robustness von Sung, Ha-Wuk, Han, Seong-Hee, Kim, Seong-Il, Ahn, Ho-Kyun, Lim, Jong-Won, Kim, Dong-Wook

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High temperature storage test and its effect on the thermal stability and electrical characteristics of AlGaN/GaN high electron mobility transistors von Lee, Jong-Min, Min, Byoung-Gue, Ju, Cheol-Won, Ahn, Ho-Kyun, Lim, Jong-Won

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Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors von Chang, Sung-Jae, Cho, Kyu-Jun, Lee, Sang-Youl, Jeong, Hwan-Hee, Lee, Jae-Hoon, Jung, Hyun-Wook, Bae, Sung-Bum, Choi, Il-Gyu, Kim, Hae-Cheon, Ahn, Ho-Kyun, Lim, Jong-Won

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Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer von Chang, Sung-Jae, Kim, Dong-Seok, Kim, Tae-Woo, Lee, Jung-Hee, Bae, Youngho, Jung, Hyun-Wook, Kang, Soo Cheol, Kim, Haecheon, Noh, Youn-Sub, Lee, Sang-Heung, Kim, Seong-Il, Ahn, Ho-Kyun, Lim, Jong-Won

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Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator von Chang, Sung-Jae, Kim, Dong-Seok, Kim, Tae-Woo, Bae, Youngho, Jung, Hyun-Wook, Choi, Il-Gyu, Noh, Youn-Sub, Lee, Sang-Heung, Kim, Seong-Il, Ahn, Ho-Kyun, Kang, Dong-Min, Lim, Jong-Won

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Characteristics of enhanced-mode AlGaN/GaN MIS HEMTs for millimeter wave applications von Lee, Jong-Min, Ahn, Ho-Kyun, Jung, Hyun-Wook, Shin, Min Jeong, Lim, Jong-Won

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Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors von Kang, Soo Cheol, Jung, Hyun-Wook, Chang, Sung-Jae, Kim, Seung Mo, Lee, Sang Kyung, Lee, Byoung Hun, Kim, Haecheon, Noh, Youn-Sub, Lee, Sang-Heung, Kim, Seong-Il, Ahn, Ho-Kyun, Lim, Jong-Won

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Fabrication of enhancement-mode AlGaN/GaN high electron mobility transistors using double plasma treatment von Lim, Jong-Won, Ahn, Ho-Kyun, Kim, Seong-il, Kang, Dong-Min, Lee, Jong-Min, Min, Byoung-Gue, Lee, Sang-Heung, Yoon, Hyung-Sup, Ju, Chull-Won, Kim, Haecheon, Mun, Jae-Kyoung, Nam, Eun-Soo, Park, Hyung-Moo

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Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaN/GaN Epitaxial Wafer for High-Performance Radio Frequency Applications von Moon, Seokho, Chang, Sung-Jae, Kim, Youngjae, Okello, Odongo Francis Ngome, Kim, Jiye, Kim, Jaewon, Jung, Hyun-Wook, Ahn, Ho-Kyun, Kim, Dong-Seok, Choi, Si-Young, Lee, JaeDong, Lim, Jong-Won, Kim, Jong Kyu

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Experimental Study on Isolation Characteristics Between Adjacent Microstrip Lines Employing Periodically Perforated Ground Metal for Application to Highly Integrated GaAs MMICs von YUN, Young, JUNG, Ji-Won, KIM, Ki-Man, KIM, Hae-Cheon, CHANG, Woo-Jin, JI, Hong-Gu, AHN, Ho-Kyun

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Effect of Fluoride‐based Plasma Treatment on the Performance of AlGaN/GaN MISHFET von Ahn, Ho‐Kyun, Kim, Hae‐Cheon, Kang, Dong‐Min, Kim, Sung‐Il, Lee, Jong‐Min, Lee, Sang‐Heung, Min, Byoung‐Gue, Yoon, Hyoung‐Sup, Kim, Dong‐Young, Lim, Jong‐Won, Kwon, Yong‐Hwan, Nam, Eun‐Soo, Park, Hyoung‐Moo, Lee, Jung‐Hee

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Improved frequency performance in AlGaN/GaN HEMTs on Si using hydrogen silsesquioxane-assisted gate von Jung, Hyun-Wook, Choi, Il-Gyu, Kim, Do-Hyun, Jung, Hyeon-Seok, Choi, Su-Min, Chang, Sung-Jae, Ahn, Ho-Kyun, Lim, Jong-Won, Kang, Dong-Min, Kim, Dae-Hyun, Won, Sang Min

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Microwave Low-Noise Performance of 0.17~\mu \text Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate von Yoon, Hyung Sup, Min, Byoung-Gue, Lee, Jong Min, Kang, Dong Min, Ahn, Ho-Kyun, Kim, Haecheon, Lim, Jongwon

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