Room-Temperature Ferromagnetism in Transparent Transition Metal-Doped Titanium Dioxide von Matsumoto, Yuji, Murakami, Makoto, Shono, Tomoji, Hasegawa, Tetsuya, Fukumura, Tomoteru, Kawasaki, Masashi, Ahmet, Parhat, Chikyow, Toyohiro, Koshihara, Shin-ya, Koinuma, Hideomi

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EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature von Kawanago, T., Yeonghun Lee, Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., Iwai, H.

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Activated boron and its concentration profiles in heavily doped Si studied by soft x-ray photoelectron spectroscopy and Hall measurements von Tsutsui, Kazuo, Matsuda, Toru, Watanabe, Masamitsu, Jin, Cheng-Guo, Sasaki, Yuichiro, Mizuno, Bunji, Ikenaga, Eiji, Kakushima, Kuniyuki, Ahmet, Parhat, Maruizumi, Takuya, Nohira, Hiroshi, Hattori, Takeo, Iwai, Hiroshi

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Rapid and Reproducible Fabrication of Carbon Nanotube AFM Probes by Dielectrophoresis von Tang, Jie, Yang, Guang, Zhang, Qi, Parhat, Ahmet, Maynor, Ben, Liu, Jie, Qin, Lu-Chang, Zhou, Otto

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La2O3 gate insulators prepared by atomic layer deposition: Optimal growth conditions and MgO/La2O3 stacks for improved metal-oxide-semiconductor characteristics von Suzuki, Takuya, Kouda, Miyuki, Ahmet, Parhat, Iwai, Hiroshi, Kakushima, Kuniyuki, Yasuda, Tetsuji

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Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors von Sato, Soshi, Kakushima, Kuniyuki, Ahmet, Parhat, Ohmori, Kenji, Natori, Kenji, Yamada, Keisaku, Iwai, Hiroshi

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Effects of corner angle of trapezoidal and triangular channel cross-sections on electrical performance of silicon nanowire field-effect transistors with semi gate-around structure von Sato, Soshi, Kakushima, Kuniyuki, Ahmet, Parhat, Ohmori, Kenji, Natori, Kenji, Yamada, Keisaku, Iwai, Hiroshi

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Si nanowire FET and its modeling von Iwai, Hiroshi, Natori, Kenji, Shiraishi, Kenji, Iwata, Jun-ichi, Oshiyama, Atsushi, Yamada, Keisaku, Ohmori, Kenji, Kakushima, Kuniyuki, Ahmet, Parhat

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Molecular Beam Epitaxy of Wurtzite GaN-Based Magnetic Alloy Semiconductors von Seiji Kuwabara, Seiji Kuwabara, Tsuyoshi Kondo, Tsuyoshi Kondo, Toyohiro Chikyow, Toyohiro Chikyow, Parhat Ahmet, Parhat Ahmet, Hiroo Munekata, Hiroo Munekata

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Cobalt valence states and origins of ferromagnetism in Co doped TiO2 rutile thin films von Murakami, Makoto, Matsumoto, Yuji, Hasegawa, Tetsuya, Ahmet, Parhat, Nakajima, Kiyomi, Chikyow, Toyohiro, Ofuchi, Hironori, Nakai, Izumi, Koinuma, Hideomi

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Covalent Nature in La-Silicate Gate Dielectrics for Oxygen Vacancy Removal von Kawanago, T., Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., Iwai, H.

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Influence of strained drain on performance of ballistic channel devices von Abudukelimu, Abudureheman, Yasenjiang, Wufuer, Kakushima, Kuniyuki, Ahmet, Parhat, Geni, Mamtimin, Natori, Kenji, Iwai, Hiroshi

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Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness von Kobayashi, Yusuke, Kakushima, Kuniyuki, Ahmet, Parhat, Ramgopal Rao, V., Tsutsui, Kazuo, Iwai, Hiroshi

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Effects of Scattering Direction of Hot Electrons in the Drain of Ballistic n+--i--n+ Diode von Abudukelimu, Abudureheman, Yasenjiang, Wufuer, Kakushima, Kuniyuki, Ahmet, Parhat, Geni, Mamtimin, Natori, Kenji, Iwai, Hiroshi

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Rare Earth Oxide Capping Effect on La2O3 Gate Dielectrics for Equivalent Oxide Thickness Scaling toward 0.5 nm von Kouda, Miyuki, Kakushima, Kuniyuki, Ahmet, Parhat, Tsutsui, Kazuo, Nishiyama, Akira, Sugii, Nobuyuki, Natori, Kenji, Hattori, Takeo, Iwai, Hiroshi

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Silicate Reaction Control at Lanthanum Oxide and Silicon Interface for Equivalent Oxide Thickness of 0.5 nm: Adjustment of Amount of Residual Oxygen Atoms in Metal Layer von Kitayama, Daisuke, Kubota, Toru, Koyanagi, Tomotsune, Kakushima, Kuniyuki, Ahmet, Parhat, Tsutsui, Kazuo, Nishiyama, Akira, Sugii, Nobuyuki, Natori, Kenji, Hattori, Takeo, Iwai, Hiroshi

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Effects of Scattering Direction of Hot Electrons in the Drain of Ballistic n + –i–n + Diode von Abudukelimu, Abudureheman, Yasenjiang, Wufuer, Kakushima, Kuniyuki, Ahmet, Parhat, Geni, Mamtimin, Natori, Kenji, Iwai, Hiroshi

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Improvement of thermal stability of Ni silicide on N +–Si by direct deposition of group III element (Al, B) thin film at Ni/Si interface von Tsutsui, Kazuo, Shiozawa, Takashi, Nagahiro, Koji, Ohishi, Yoshihisa, Kakushima, Kuniyuki, Ahmet, Parhat, Urushihara, Nobuyuki, Suzuki, Mineharu, Iwai, Hiroshi

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Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability von Wu, Yan, Dou, Chunmeng, Wei, Feng, Kakushima, Kuniyuki, Ohmori, Kenji, Ahmet, Parhat, Watanabe, Takanobu, Tsutsui, Kazuo, Nishiyama, Akira, Sugii, Nobuyuki, Natori, Kenji, Yamada, Keisaku, Kataoka, Yoshinori, Hattori, Takeo, Iwai, Hiroshi

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Thermal stability of Ni silicide films on heavily doped n + and p + Si substrates von Ahmet, Parhat, Shiozawa, Takashi, Nagahiro, Koji, Nagata, Takahiro, Kakushima, Kuniyuki, Tsutsui, Kazuo, Chikyow, Toyohiro, Iwai, Hiroshi

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