Materials issues and devices of α- and β-Ga2O3 von Ahmadi, Elaheh, Oshima, Yuichi

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Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications von Oshima, Yuichi, Ahmadi, Elaheh

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Temperature-dependent current-voltage characteristics of β-Ga2O3 trench Schottky barrier diodes von Jian, Zhe (Ashley), Mohanty, Subhajit, Ahmadi, Elaheh

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Deep UV-assisted capacitance–voltage characterization of post-deposition annealed Al2O3/β-Ga2O3 (001) MOSCAPs von Jian, Zhe (Ashley), Mohanty, Subhajit, Ahmadi, Elaheh

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Sn doping of (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy von Mauze, Akhil, Zhang, Yuewei, Itoh, Takeki, Ahmadi, Elaheh, Speck, James S.

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N-polar ScAlN and HEMTs grown by molecular beam epitaxy von Wang, Ping, Wang, Ding, Wang, Boyu, Mohanty, Subhajit, Diez, Sandra, Wu, Yuanpeng, Sun, Yi, Ahmadi, Elaheh, Mi, Zetian

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Donors and deep acceptors in β-Ga2O3 von Neal, Adam T., Mou, Shin, Rafique, Subrina, Zhao, Hongping, Ahmadi, Elaheh, Speck, James S., Stevens, Kevin T., Blevins, John D., Thomson, Darren B., Moser, Neil, Chabak, Kelson D., Jessen, Gregg H.

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Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs von Romanczyk, Brian, Wienecke, Steven, Guidry, Matthew, Li, Haoran, Ahmadi, Elaheh, Zheng, Xun, Keller, Stacia, Mishra, Umesh K.

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Influence of pH on Heat-Induced Changes in Skim Milk Containing Various Levels of Micellar Calcium Phosphate von Ahmadi, Elaheh, Vasiljevic, Todor, Huppertz, Thom

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(010) β-(Alx, Ga1−x)2O3 growth using tritertiarybutylaluminum as Al gas precursor via hybrid molecular beam epitaxy von Wen, Zhuoqun, Zhai, Xin, Khan, Kamruzzaman, Odabasi, Oguz, Kim, Mijung, Ahmadi, Elaheh

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Model to explain the behavior of 2DEG mobility with respect to charge density in N-polar and Ga-polar AlGaN-GaN heterostructures von Ahmadi, Elaheh, Keller, Stacia, Mishra, Umesh K.

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Evaluation of linearity at 30 GHz for N-polar GaN deep recess transistors with 10.3 W/mm of output power and 47.4% PAE von Romanczyk, Brian, Guidry, Matthew, Zheng, Xun, Shrestha, Pawana, Li, Haoran, Ahmadi, Elaheh, Keller, Stacia, Mishra, Umesh K.

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W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs von Romanczyk, Brian, Zheng, Xun, Guidry, Matthew, Li, Haoran, Hatui, Nirupam, Wurm, Christian, Krishna, Athith, Ahmadi, Elaheh, Keller, Stacia, Mishra, Umesh K.

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Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy von Oshima, Yuichi, Ahmadi, Elaheh, Kaun, Stephen, Wu, Feng, Speck, James S

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Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels von Li, Haoran, Wienecke, Steven, Romanczyk, Brian, Ahmadi, Elaheh, Guidry, Matthew, Zheng, Xun, Keller, Stacia, Mishra, Umesh K.

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Demonstration of device-quality 60% relaxed In0.2Ga0.8N on porous GaN pseudo-substrates grown by PAMBE von Wurm, Christian, Collins, Henry, Hatui, Nirupam, Li, Weiyi, Pasayat, Shubhra, Hamwey, Robert, Sun, Kai, Sayed, Islam, Khan, Kamruzzaman, Ahmadi, Elaheh, Keller, Stacia, Mishra, Umesh

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Band alignment of sputtered and atomic layer deposited SiO2 and Al2O3 on ScAlN von Xia, Xinyi, Li, Jian-Sian, Khan, Md Irfan, Khan, Kamruzzaman, Ahmadi, Elaheh, Hays, David C., Ren, Fan, Pearton, S. J.

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Electron transport in N-polar GaN-based heterostructures von Rakoski, Alexa, Diez, Sandra, Li, Haoran, Keller, Stacia, Ahmadi, Elaheh, Kurdak, Çağlıyan

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Influence of Heating Temperature and pH on Acid Gelation of Micellar Calcium Phosphate-Adjusted Skim Milk von Ahmadi, Elaheh, Vasiljevic, Todor, Huppertz, Thom

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Bibliotherapy by medical librarians for the blind females von Shekofteh, Maryam, Ahmadi, Elaheh, Kazerani, Maryam, Salabifar, Sedighe

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