On the Performance Limits of Cryogenically Operated SiGe HBTs and Its Relation to Scaling for Terahertz Speeds von Jiahui Yuan, Cressler, J.D., Krithivasan, R., Thrivikraman, T., Khater, M.H., Ahlgren, D.C., Joseph, A.J., Jae-Sung Rieh

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SiGe heterojunction bipolar transistors and circuits toward terahertz communication applications von Jae-Sung Rieh, Jagannathan, B., Greenberg, D.R., Meghelli, M., Rylyakov, A., Guarin, F., Zhijian Yang, Ahlgren, D.C., Freeman, G., Cottrell, P., Harame, D.

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Structure optimization of trench-isolated SiGe HBTs for simultaneous improvements in thermal and electrical performances von Jae-Sung Rieh, Greenberg, D., Qizhi Liu, Joseph, A.J., Freeman, G., Ahlgren, D.C.

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Cryogenic operation of third-generation, 200-GHz Peak-fT, silicon-germanium heterojunction bipolar transistors von BANERJEE, Bhaskar, VENKATARAMAN, Sunitha, FREEMAN, Greg, AHLGREN, David C, YUAN LU, QINGQING LIANG, LEE, Chang-Ho, NUTTINCK, Sebastien, HEO, Dekhyuon, CHEN, Yi-Jan Emery, CRESSLER, John D, LASKAR, Joy

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Measurement of collector-base junction avalanche multiplication effects in advanced UHV/CVD SiGe HBT's von Niu, G., Cressler, J.D., Zhang, S., Gogineni, U., Ahlgren, D.C.

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A simple four-port parasitic deembedding methodology for high-frequency scattering parameter and noise characterization of SiGe HBTs von Qingqing Liang, Cressler, J.D., Guofu Niu, Yuan Lu, Freeman, G., Ahlgren, D.C., Malladi, R.M., Newton, K., Harame, D.L.

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Enhanced low-temperature corner current-carrying inherent to shallow trench isolation (STI) von Niu, G., Cressler, J.D., Mathew, S.J., Ahlgren, D.C.

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Transistor design and application considerations for >200-GHz SiGe HBTs von Freeman, G., Jagannathan, B., Shwu-Jen Jeng, Jae-Sung Rieh, Stricker, A.D., Ahlgren, D.C., Subbanna, S.

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On the Frequency Limits of SiGe HBTs for TeraHertz Applications von Jiahui Yuan, Krithivasan, R., Cressler, J.D., Khater, M.H., Ahlgren, D.C., Joseph, A.J.

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Gate-Induced-Drain-Leakage Current in 45-nm CMOS Technology von Xiaobin Yuan, Jae-Eun Park, Jing Wang, Enhai Zhao, Ahlgren, D.C., Hook, T., Jun Yuan, Chan, V., Huiling Shang, Chu-Hsin Liang, Lindsay, R., Sungjoon Park, Hyotae Choo

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SiGe fuels high-speed communications von Ahlgren, David C, Jagannathan, Basanth, Stephen St Onge, Dupuis, Mark D

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Vertical device with optimal trench shape von ADAM THOMAS N, DIVAKARUNI RAMACHANDRA, AHLGREN DAVID C, CHENG KANGGUO

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Vertical device with optimal trench shape von Adam, Thomas N, Ahlgren, David C, Cheng, Kangguo, Divakaruni, Ramachandra

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Bipolar transistor with isolation and direct contacts von Ahlgren, David C, Freeman, Gregory G, Pagette, Francois, Schnabel, Christopher M, Topol, Anna W

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Bipolar transistor with isolation and direct contacts von TOPOL ANNA W, SCHNABEL CHRISTOPHER M, AHLGREN DAVID C, PAGETTE FRANCOIS, FREEMAN GREGORY G

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Fully silicided extrinsic base transistor von Ahlgren, David C, Cohen, Guy M, Lavoie, Christian, Pagette, Francois, Topol, Anna W

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Fully silicided extrinsic base transistor von LAVOIE CHRISTIAN, TOPOL ANNA W, AHLGREN DAVID C, PAGETTE FRANCOIS, COHEN GUY M

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VERTICAL DEVICE WITH OPTIMAL TRENCH SHAPE von ADAM THOMAS N, DIVAKARUNI RAMACHANDRA, AHLGREN DAVID C, CHENG KANGGUO

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Bipolar transistor having self-aligned silicide and a self-aligned emitter contact border von VOLANT RICHARD P, AHLGREN DAVID C, KHATER MARWAN H, FREEMAN GREGORY G

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Bipolar transistor having self-aligned silicide and a self-aligned emitter contact border von Ahlgren, David C, Freeman, Gregory G, Khater, Marwan H, Volant, Richard P

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