Electron and Hole Capture Cross-Sections of Fe Acceptors in GaN:Fe Epitaxially Grown on Sapphire von AGGERSTAM, T, PINOS, A, MARCINKEVICIUS, S, LINNARSSON, M, LOURDUDOSS, S

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Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates von Ougazzaden, A., Rogers, D.J., Hosseini Teherani, F., Moudakir, T., Gautier, S., Aggerstam, T., Ould Saad, S., Martin, J., Djebbour, Z., Durand, O., Garry, G., Lusson, A., McGrouther, D., Chapman, J.N.

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Investigation of the interface properties of MOVPE grown AlGaN/GaN high electron mobility transistor (HEMT) structures on sapphire von Aggerstam, T., Lourdudoss, S., Radamson, H.H., Sjödin, M., Lorenzini, P., Look, D.C.

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Electrical and structural characterization of ion implanted GaN von Usman, M., Nazir, A., Aggerstam, T., Linnarsson, M.K., Hallén, A.

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Enhancement of both direct-current and microwave characteristics of AlGaN∕GaN high-electron-mobility transistors by furnace annealing von Arulkumaran, S., Ng, G. I., Tan, C. L., Liu, Z. H., Bu, J., Radhakrishnan, K., Aggerstam, T., Sjödin, M., Lourdudoss, S.

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Growth of GaN and GaN/AlN multiple quantum wells on sapphire, Si and GaN template by molecular beam epitaxy von Liu, X.Y., Jänes, P., Holmström, P., Aggerstam, T., Lourdudoss, S., Thylén, L., Andersson, T.G.

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AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas von Gautier, S., Aggerstam, T., Pinos, A., Marcinkevičius, S., Liu, K., Shur, M., O’Malley, S.M., Sirenko, A.A., Djebbour, Z., Migan-Dubois, A., Moudakir, T., Ougazzaden, A.

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AlGaN/GaN high-electron-mobility transistors on sapphire with Fe-doped GaN buffer layer by MOVPE von Aggerstam, T., Sjödin, M., Lourdudoss, S.

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Cracks in GaN/AlN multiple quantum well structures grown by MBE von Liu, X Y, Aggerstam, T, Holmström, P, Lourdudoss, S, Andersson, T G

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Investigation of intersubband absorption in GaN/AlN multiple quantum wells grown on different substrates by molecular beam epitaxy von Liu, X.Y., Aggerstam, T., Jänes, P., Holmström, P., Lourdudoss, S., Thylén, L., Andersson, T.G.

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High dose Fe implantation of GaN: damage build-up and dopant redistribution von Azarov, A Y, Hallén, A, Jensen, J, Aggerstam, T, Lourdudoss, S

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GaN thin films on z- and x -cut LiNbO3 substrates by MOVPE von Ougazzaden, A., Moudakir, T., Aggerstam, T., Orsal, G., Salvestrini, J. P., Gautier, S., Sirenko, A. A.

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Anomalous k-dependent spin splitting in wurtzite AlxGa1-xN/GaN heterostructures von Lo, Ikai, Gau, M. H., Tsai, J. K., Chen, Y. L., Chang, Z. J., Wang, W. T., Chiang, J. C., Aggerstam, T., Lourdudoss, Sebastian

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Dopant distribution in high fluence Fe implanted GaN von Azarov, A. Yu, Jensen, J., Hallén, A., Aggerstam, T.

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Macroscopic defects in GaN/AlN multiple quantum well structures grown by MBE on GaN templates von Andersson, T.G., Liu, X.Y., Aggerstam, T., Holmström, P., Lourdudoss, S., Thylen, L., Chen, Y.L., Hsieh, C.H., Lo, I.

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AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas von Gautier, S., Aggerstam, T., Pinos, A., Marcinkevicius, S., Liu, K., Shur, M., O'Malley, S.M., Sirenko, A.A., Djebbour, Zakaria, Migan-Dubois, Anne, Moudakir, T., Ougazzaden, A.

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GaN thin films on z‐ and x ‐cut LiNbO 3 substrates by MOVPE von Ougazzaden, A., Moudakir, T., Aggerstam, T., Orsal, G., Salvestrini, J. P., Gautier, S., Sirenko, A. A.

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Enhancement of both direct-current and microwave characteristics of Al Ga N ∕ Ga N high-electron-mobility transistors by furnace annealing von Arulkumaran, S., Ng, G. I., Tan, C. L., Liu, Z. H., Bu, J., Radhakrishnan, K., Aggerstam, T., Sjödin, M., Lourdudoss, S.

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AlGaN/AIN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas von GAUTIER, S, AGGERSTAM, T, MOUDAKIR, T, OUGAZZADEN, A, PINOS, A, MARCINKEVICUS, S, LIU, K, SHUR, M, O'MALLEY, S. M, SIRENKO, A. A, DJEBBOUR, Z, MIGAN-DUBOIS, A

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Anomalous k -dependent spin splitting in wurtzite Al x Ga 1 − x N ∕ Ga N heterostructures von Lo, Ikai, Gau, M. H., Tsai, J. K., Chen, Y. L., Chang, Z. J., Wang, W. T., Chiang, J. C., Aggerstam, T., Lourdudoss, S.

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