High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers von Lichtenwalner, Daniel J., Cheng, Lin, Dhar, Sarit, Agarwal, Anant, Palmour, John W.

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Time-Dependent Dielectric Breakdown of Commercial 1.2 kV 4H-SiC Power MOSFETs von Liu, Tianshi, Zhu, Shengnan, White, Marvin H., Salemi, Arash, Sheridan, David, Agarwal, Anant K.

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Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs von Qian, Jiashu, Shi, Limeng, Jin, Michael, Bhattacharya, Monikuntala, Shimbori, Atsushi, Yu, Hengyu, Houshmand, Shiva, White, Marvin H, Agarwal, Anant K

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1200-V SiC MOSFET Short-Circuit Ruggedness Evaluation and Methods to Improve Withstand Time von Xing, Diang, Hu, Boxue, Kang, Minseok, Zhang, Yue, Nayak, Suvendu, Wang, Jin, Agarwal, Anant K.

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Characterization, Modeling, and Application of 10-kV SiC MOSFET von Jun Wang, Tiefu Zhao, Jun Li, Huang, A.Q., Callanan, R., Husna, F., Agarwal, A.

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Experimental Determination of Interface Trap Density and Fixed Positive Oxide Charge in Commercial 4H-SiC Power MOSFETs von Yu, Susanna, White, Marvin H., Agarwal, Anant K.

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SiC Trench MOSFET with Depletion-Mode pMOS for Enhanced Short-Circuit Capability and Switching Performance von Yu, Hengyu, Shi, Limeng, Bhattacharya, Monikuntala, Jin, Michael, Qian, Jiashu, Agarwal, Anant K.

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Effects of JFET Region Design and Gate Oxide Thickness on the Static and Dynamic Performance of 650 V SiC Planar Power MOSFETs von Zhu, Shengnan, Liu, Tianshi, Fan, Junchong, Maddi, Hema Lata Rao, White, Marvin H., Agarwal, Anant K.

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A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching von Zhu, Shengnan, Liu, Tianshi, Fan, Junchong, Salemi, Arash, White, Marvin H., Sheridan, David, Agarwal, Anant K.

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The Road to a Robust and Affordable SiC Power MOSFET Technology von Maddi, Hema Lata Rao, Yu, Susanna, Zhu, Shengnan, Liu, Tianshi, Shi, Limeng, Kang, Minseok, Xing, Diang, Nayak, Suvendu, White, Marvin H., Agarwal, Anant K.

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A New Degradation Mechanism in High-Voltage SiC Power MOSFETs von Agarwal, A., Fatima, H., Haney, S., Sei-Hyung Ryu

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Should planning of cervical pedicle screws be race specific? Computed tomography–based morphometric analysis von Agarwal, Ashish, Agarwal, Anant, Kumar, Ashutosh

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Failed nonunion subtrochanteric femur fracture managed with uncemented total hip replacement von Kumar, Ashutosh, Singh Ishank, Agarwal Anant, Thimarappa, Somasekarapp

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An Investigation of Body Diode Reliability in Commercial 1.2 kV SiC Power MOSFETs with Planar and Trench Structures von Qian, Jiashu, Shi, Limeng, Jin, Michael, Bhattacharya, Monikuntala, Shimbori, Atsushi, Yu, Hengyu, Houshmand, Shiva, White, Marvin H, Agarwal, Anant K

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Non-isothermal simulation of SiC DMOSFET short circuit capability von Nayak, Suvendu, Yu, Susanna, Maddi, Hema Lata Rao, Jin, Michael, Shi, Limeng, Ganguly, Swaroop, Agarwal, Anant K.

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Gate Oxide Reliability in Silicon Carbide Planar and Trench Metal-Oxide-Semiconductor Field-Effect Transistors Under Positive and Negative Electric Field Stress von Shi, Limeng, Qian, Jiashu, Jin, Michael, Bhattacharya, Monikuntala, Houshmand, Shiva, Yu, Hengyu, Shimbori, Atsushi, White, Marvin H., Agarwal, Anant K.

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A 400 V Buck Converter integrated with Gate-Drivers and low-voltage Controller in a 25–600 V mixed-mode SiC CMOS technology von Gupta, Utsav, Zhang, Hua, Liu, Tianshi, Isukapati, Sundar, Ashik, Emran, Morgan, Adam, Lee, Bongmook, Sung, Woongje, Agarwal, Anant, Fayed, Ayman

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Graphite: A distributed parallel simulator for multicores von Miller, Jason E, Kasture, Harshad, Kurian, George, Gruenwald, Charles, Beckmann, Nathan, Celio, Christopher, Eastep, Jonathan, Agarwal, Anant

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SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology von Liu, Tianshi, Zhang, Hua, Isukapati, Sundar Babu, Ashik, Emran, Morgan, Adam J., Lee, Bongmook, Sung, Woongje, Fayed, Ayman, White, Marvin H., Agarwal, Anant K.

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A Study on Pre-Oxidation Nitrogen Implantation for the Improvement of Channel Mobility in 4H-SiC MOSFETs von Dhar, Sarit, Sei-Hyung Ryu, Agarwal, Anant K

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