Thermal stability of emitter ballasted HBT's von Adlerstein, M.G.

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Thermal resistance measurements for AlGaAs/GaAs heterojunction bipolar transistors von Adlerstein, M.G., Zaitlin, M.P.

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In Need of Correction: The "Iron Triangle" of the Prison Litigation Reform Act von Adlerstein, David M.

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Current induced degradation in GaAs HBT's von Adlerstein, M.G., Gering, J.M.

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GaAs IMPATT diodes for 60 GHz von Adlerstein, M.G., Chu, S.L.G.

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High gain, pulsed power AlGaAs/GaAs HBTs von JACKSON, G, STRUBLE, W, ADLERSTEIN, M, SHANFIELD, S, COBB, M, ZAITLIN, M, TONG, E, PUCEL, R, SALEDAS, P

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Double-velocity IMPATT diodes von Adlerstein, M.G., Statz, H.

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Conduction current injection delay in Read GaAs IMPATT diodes von Adlerstein, M.G., Statz, H.

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A high-gain, low-noise 1/2- mu m pulse-doped pseudomorphic HEMT von Huang, J.C., Zaitlin, M., Hoke, W., Adlerstein, M., Lyman, P., Saledas, P., Jackson, G., Tong, E., Flynn, G.

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Approximate formulas for the thermal resistance of IMPATT diodes compared with computer calculations von Holway, L.H., Adlerstein, M.G.

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Measurement of series resistance in IMPATT diodes von Adlerstein, M.G., Holway, L.H., Chu, S.L.G.

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Ka-band GaAs HBT PIN diode switches and phase shifters von Teeter, D., Wohlert, R., Cole, B., Jackson, G., Tong, E., Saledas, P., Adlerstein, M., Schindler, M., Shanfield, S.

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Retinomorphic system design in three dimensional SOI-CMOS von Adlerstein Marwick, M., Andreou, A.G.

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The Accuracy of Clinical Psychologists' Estimates of Interviewees' Intelligence von Sperber, Zanwil, Adlerstein, Arthur M

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35 GHz pulsed HBT MMIC amplifiers von Wohlert, R.M., Jackson, G., Adlerstein, M.G.

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A 60-W CW Solid-State Oscillator at C Band (Letters) von Wallace, R.N., Adlerstein, M.G., Steele, S.R.

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HALOPERIDOL IN THE PSYCHIATRIC DISORDERS OF OLD AGE von SUGERMAN, A. ARTHUR, WILLIAMS, BENJAMIN H, ADLERSTEIN, ARTHUR M

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Emerging Issues in Decentralized Governance and the Lessons of Corporate Governance von Schwartz, Kevin S, Adlerstein, David M, Kirk, David E, Mun, I Andrew

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Pulsed 1-watt heterojunction bipolar transistors at 35 GHz von Adlerstein, M.G., Zaitlin, M.P., Hoke, W., Tong, E., Jackson, G.

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Avalanche response time in GaAs as determined from microwave admittance measurements von Adlerstein, M.G., McClymonds, J.W., Statz, H.

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