Growth and structural characterization of intrinsic, acceptor, and donor doped (Mg,Zn)O epilayers via metalorganic vapor phase epitaxy on (1 0 1¯ 0) ZnO substrates von Pierce, J.M., Wen, H., Liu, K., Kumrr, M., Tresback, J., Ali, Y.S., Krahnert, A., Adekore, B.T.

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Homoepitaxial growth of dense ZnO(0001) and ZnO (112¯0) films via MOVPE on selected ZnO substrates von Pierce, J.M., Adekore, B.T., Davis, R.F., Stevie, F.A.

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Synthesis of erbium-doped gallium nitride crystals by the ammonothermal route von Adekore, B.T., Callahan, M.J., Bouthillette, L., Dalmau, R., Sitar, Z.

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Ammonothermal synthesis of aluminum nitride crystals on group III-nitride templates von ADEKORE, B. T, RAKES, K, WANG, B, CALLAHAN, M. J, PENDURTI, S, SITAR, Z

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Growth of dense ZnO films via MOVPE on GaN(0 0 0 1) epilayers using a low/high-temperature sequence von Pierce, J.M., Adekore, B.T., Davis, R.F., Stevie, F.A.

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SIMS analysis of zinc oxide LED structures: quantification and analysis issues von Stevie, F. A., Maheshwari, P., Pierce, J. M., Adekore, B. T., Griffis, D. P.

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Photoluminescence studies of (Mg, Zn)O epilayers via metalorganic vapor phase epitaxy on m -plane ZnO substrates von Liu, K., Pierce, J. M., Ali, Y. S., Krahnert, A., Adekore, B. T.

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Highly Controlled Wet and Dry Etching of Gallium Doped (Mg, Zn) O Epilayers Grown Using Metalorganic Vapor Phase Epitaxy von Tresback, J., Pierce, J. M., Ali, Y. S., Krahnert, A., Wen, H., Kumar, M., Adekore, B. T.

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Nitrogen acceptors in bulk ZnO (0001¯) substrates and homoepitaxial ZnO films von Adekore, B. T., Pierce, J. M., Davis, R. F., Barlage, D. W., Muth, J. F.

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Electrical and optical properties of ZnO ( 000 1 ¯ ) wafers implanted with argon von Adekore, B. T., Davis, R. F., Barlage, D. W.

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Nitrogen acceptors in bulk ZnO ( 000 1 ¯ ) substrates and homoepitaxialZnO films von Adekore, B. T., Pierce, J. M., Davis, R. F., Barlage, D. W., Muth, J. F.

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Growth of dense ZnO films via MOVPE on GaN(0 0 0 1) epilayers using a low/high-temperature sequence von Pierce, J M, Adekore, B T, Davis, R F, Stevie, F A

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Defect reduction of selective Ge epitaxy in trenches on Si(001) substrates using aspect ratio trapping von Park, J.-S., Bai, J., Curtin, M., Adekore, B., Carroll, M., Lochtefeld, A.

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Defect reduction of GaAs epitaxy on Si (001) using selective aspect ratio trapping von Li, J. Z., Bai, J., Park, J.-S., Adekore, B., Fox, K., Carroll, M., Lochtefeld, A., Shellenbarger, Z.

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Study of the defect elimination mechanisms in aspect ratio trapping Ge growth von Bai, J., Park, J.-S., Cheng, Z., Curtin, M., Adekore, B., Carroll, M., Lochtefeld, A., Dudley, M.

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Study of the Defect Eliminations Mechanisms in Aspect Ratio Trapping Ge Growth von Bai,J., Park, J., Cheng, Z., Curtin, M., Adekore, B., Carroll, M., Lochtefeld, A., Dudley, M.

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Defect reduction of GaAs epitaxy on Si (001) using selective aspectratio trapping von Li, J. Z., Bai, J., Park, J.-S., Adekore, B., Fox, K., Carroll, M., Lochtefeld, A., Shellenbarger, Z.

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Study of the defect elimination mechanisms in aspect ratio trappingGe growth von Bai, J., Park, J.-S., Cheng, Z., Curtin, M., Adekore, B., Carroll, M., Lochtefeld, A., Dudley, M.

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Autonomous Modular Flare Gas Conversion Systems and Methods von Yelvington, Paul E, Browne, Joshua B, Adekore, Bunmi Tolu, Dean, John Anthony, Randolph, Andrew

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AUTONOMOUS MODULAR FLARE GAS CONVERSION SYSTEMS AND METHODS von ADEKORE, Bunmi Tolu, DEAN, John Anthony, YELVINGTON, Paul E, RANDOLPH, Andrew, BROWNE, Joshua B

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