Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor von Passlack, M., Abrokwah, J.K., Droopad, R., Zhiyi Yu, Overgaard, C., Sang In Yi, Hale, M., Sexton, J., Kummel, A.C.

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Enhancement-Mode GaAs n-Channel MOSFET von Rajagopalan, K., Abrokwah, J., Droopad, R., Passlack, M.

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High mobility NMOSFET structure with high-κ dielectric von PASSLACK, Matthias, DROOPAD, Ravi, RAJAGOPALAN, Karthik, ABROKWAH, Jonathan, GREGORY, Rich, NGUYEN, Danh

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Implant-free high-mobility flatband MOSFET: principles of operation von Passlack, M., Rajagopalan, K., Abrokwah, J., Droopad, R.

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In0.75Ga0.25As channel layers with record mobility exceeding 12,000cm2/Vs for use in high-κ dielectric NMOSFETs von Droopad, Ravi, Rajagopalan, Karthik, Abrokwah, Jonathan, Canonico, Michael, Passlack, Matthias

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In0.75Ga0.25As channel layers with record mobility exceeding 12,000 cm2/Vs for use in high-κ dielectric NMOSFETs von Droopad, Ravi, Rajagopalan, Karthik, Abrokwah, Jonathan, Canonico, Michael, Passlack, Matthias

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Anisotype-gate self-aligned p-channel heterostructure field-effect transistors von Abrokwah, J.K., Huang, J.-H., Ooms, W.J., Hallmark, J.A.

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In0.75Ga0.25As channel layers with record mobility exceeding 12,000 cm2/vs for use in high-k dielectric NMOSFETs von DROOPAD, Ravi, RAJAGOPALAN, Karthik, ABROKWAH, Jonathan, CANONICO, Michael, PASSLACK, Matthias

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Enhancement-Mode GaAs MOSFETs With an \hbox \hbox\hbox Channel, a Mobility of Over 5000 \hbox^/\hbox \cdot \hbox, and Transconductance of Over 475 \mu\hbox/\mu\hbox von Hill, R.J.W., Moran, D.A.J., Xu Li, Haiping Zhou, Macintyre, D., Thoms, S., Asenov, A., Zurcher, P., Rajagopalan, K., Abrokwah, J., Droopad, R., Passlack, M., Thayne, I.G.

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Experimental observation of velocity overshoot in n-channel AlGaAs/InGaAs/GaAs enhancement mode MODFETs von Passlack, M., Abrokwah, J.K., Lucero, R.

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Enhancement-mode GaAs MOSFETs with an In0.3Ga0.7As channel, a mobility of over 5000 cm2/V. s, and transconductance of over 475 μS/μm von HILL, Richard J. W, MORAN, David A. J, DROOPAD, Ravi, PASSLACK, Matthias, THAYNE, Iain G, XU LI, HAIPING ZHOU, MACINTYRE, Douglas, THORNS, Stephen, ASENOV, Asen, ZURCHER, Peter, RAJAGOPALAN, Karthik, ABROKWAH, Jonathan

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Semiconductor structure with strain reduction von Dixon, Forest, Snodgrass, William, Dungan, Thomas Edward, Abrokwah, Jonathan Kwadwo

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SEMICONDUCTOR STRUCTURE WITH STRAIN REDUCTION von Dixon, Forest, Snodgrass, William, Dungan, Thomas Edward, Abrokwah, Jonathan Kwadwo

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High-Dielectric Constant Capacitor Structures on III-V Substrates von Dungan, Thomas, Nikkel, Phil, Abrokwah, Jonathan, Yeldandi, Satish

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Optical measurement system for characterizing compound semiconductor interface and surface states von Passlack, M., Legge, R.N., Convey, D., Zhiyi Yu, Abrokwah, J.K.

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Submicron p-channel (Al,Ga)As/(In,Ga)As HIGFETs von Abrokwah, J.K., Lucero, R., Hallmark, J.A., Bernhardt, B.

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Moisture barrier for semiconductor structures with stress relief von Snyder Rick, Abrokwah Jonathan, Halac Greg, Dixon Forest, Dungan Thomas

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Moisture barrier for semiconductor structures with stress relief von Snyder Rick, Abrokwah Jonathan, Halac Greg, Dixon Forest, Dungan Thomas

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MOISTURE BARRIER FOR SEMICONDUCTOR STRUCTURES WITH STRESS RELIEF von Snyder Rick, Abrokwah Jonathan, Halac Greg, Dixon Forest, Dungan Thomas

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Insulated gate field effect transistors von PASSLACK MATTHIAS, ABROKWAH JONATHAN K, DROOPAD RAVINDRANATH

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