Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor von Passlack, M., Abrokwah, J.K., Droopad, R., Zhiyi Yu, Overgaard, C., Sang In Yi, Hale, M., Sexton, J., Kummel, A.C.

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Growth and physical properties of Ga2O3 thin films on GaAs(001) substrate by molecular-beam epitaxy von Yu, Z., Overgaard, C. D., Droopad, R., Passlack, M., Abrokwah, J. K.

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Thermally induced oxide crystallinity and interface destruction in Ga2O3–GaAs structures von Passlack, M., Abrokwah, J. K., Yu, Z., Droopad, R., Overgaard, C., Kawayoshi, H.

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Nonalloyed InGaAs/GaAs ohmic contacts for self-aligned ion implanted GaAs heterostructure field effect transistors von HUANG, J. H, ABROKWAH, J. K, OOMS, W. J

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NiZnAl-based p-type ohmic contacts on AlGaAs/InGaAs heterostructures von Abrokwah, J.K., Huang, J.H., Baker, J., Polito, T., Ooms, W.

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Experimental observation of velocity overshoot in n-channel AlGaAs/InGaAs/GaAs enhancement mode MODFETs von Passlack, M., Abrokwah, J.K., Lucero, R.

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Anisotype-gate self-aligned p-channel heterostructure field-effect transistors von Abrokwah, J.K., Huang, J.-H., Ooms, W.J., Hallmark, J.A.

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High-performance self-aligned (Al,Ga)As/(In,Ga)As pseudomorphic HIGFETs von Abrokwah, J.K., Stephens, J.M.

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Realization of n-channel and p-channel high-mobility (Al,GA)As/GaAs heterostructure insulating gate FET's on a planar wafer surface von Cirillo, N.C., Shur, M.S., Vold, P.J., Abrokwah, J.K., Tufte, O.N.

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High-performance self-aligned p+/n GaAs epitaxial JFET's incorporating AlGaAs etch-stop layer von ABROKWAH, J. K, LEYBOVICH, I. S, SZALKOWSKI, F. I, WATANABE, S. H

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Electronic subbands for AlxGa1-xAs/GaAs multilayer and superlattice structures von RUDEN, P. P, ENGELHARDT, D. C, ABROKWAH, J. K

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Current-voltage and capacitance-voltage characteristics of heterostructure insulated-gate field-effect transistors von Baek, J., Shur, M.S., Daniels, R.R., Arch, D.K., Abrokwah, J.K., Tufte, O.N.

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Residual donors and acceptors in high-purity GaAs and InP grown by hydride VPE von SKROMME, B. J, LOW, T. S, ROTH, T. J, STILLMAN, G. E, KENNEDY, J. K, ABROKWAH, J. K

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Superlattice conduction in superlattice modulation-doped field-effect transistors von ARCH, D. K, SHUR, M, ABROKWAH, J. K, DANIELS, R. R

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New negative resistance regime of heterostructure insulated gate transistor (HIGFET) operation von Shur, M.S., Arch, D.K., Daniels, R.R., Abrokwah, J.K.

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Mobility enhancement in highly doped GaAs quantum wells von SHUR, M. S, ABROKWAH, J. K, DANIELS, R. R, ARCH, D. K

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Inverted GaAs/AlGaAs modulation-doped field-effect transistors with extremely high transconductances von Cirillo, N.C., Shur, M.S., Abrokwah, J.K.

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Self-aligned modulation-doped (Al,Ga)As/GaAs field-effect transistors von Cirillo, N.C., Abrokwah, J.K., Shur, M.S.

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Optical measurement system for characterizing compound semiconductor interface and surface states von Passlack, M., Legge, R.N., Convey, D., Zhiyi Yu, Abrokwah, J.K.

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New mechanism of gate current in heterostructure insulated gate field-effect transistors von Jun Ho Baek, Shur, M., Daniels, R.R., Arch, D.K., Abrokwah, J.K., Tufte, O.N.

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