Enhancement-Mode GaAs n-Channel MOSFET von Rajagopalan, K., Abrokwah, J., Droopad, R., Passlack, M.

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Implant-free high-mobility flatband MOSFET: principles of operation von Passlack, M., Rajagopalan, K., Abrokwah, J., Droopad, R.

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1-μm enhancement mode GaAs N-channel MOSFETs with transconductance exceeding 250 mS/mm von RAJAGOPALAN, K, DROOPAD, R, ABROKWAH, J, ZURCHER, P, FEJES, P, PASSLACK, M

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Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor von Passlack, M., Abrokwah, J.K., Droopad, R., Zhiyi Yu, Overgaard, C., Sang In Yi, Hale, M., Sexton, J., Kummel, A.C.

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Growth and physical properties of Ga2O3 thin films on GaAs(001) substrate by molecular-beam epitaxy von Yu, Z., Overgaard, C. D., Droopad, R., Passlack, M., Abrokwah, J. K.

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Compound semiconductor MOSFETs von Droopad, R., Rajagopalan, K., Abrokwah, J., Zurcher, P., Passlack, M.

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Compact Harmonic Filter Design and Fabrication Using IPD Technology von Lianjun Liu, Shun-Meen Kuo, Abrokwah, J., Ray, M., Maurer, D., Miller, M.

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Gate dielectrics on compound semiconductors von Droopad, R., Passlack, M., England, N., Rajagopalan, K., Abrokwah, J., Kummel, A.

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Low damage ashing and etching processes for ion implanted resist and Si3N4 removal by ICP and RIE methods von Li, X., Zhou, H., Abrokwah, J., Zurcher, P., Rajagopalan, K., Liu, W., Gregory, R., Passlack, M., Thayne, I.G.

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High mobility NMOSFET structure with high-/spl kappa/ dielectric von Passlack, M., Droopad, R., Rajagopalan, K., Abrokwah, J., Gregory, R., Nguyen, D.

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High mobility NMOSFET structure with high-κ dielectric von PASSLACK, Matthias, DROOPAD, Ravi, RAJAGOPALAN, Karthik, ABROKWAH, Jonathan, GREGORY, Rich, NGUYEN, Danh

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Thermally induced oxide crystallinity and interface destruction in Ga2O3–GaAs structures von Passlack, M., Abrokwah, J. K., Yu, Z., Droopad, R., Overgaard, C., Kawayoshi, H.

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Morphology of Ruptured Abdominal Aortic Aneurysms von Golledge, J., Abrokwah, J., Shenoy, K.N., Armour, R.H.

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Experimental observation of velocity overshoot in n-channel AlGaAs/InGaAs/GaAs enhancement mode MODFETs von Passlack, M., Abrokwah, J.K., Lucero, R.

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Nonradiative recombination at GaAs homointerfaces fabricated using an As cap deposition/removal process von Passlack, M., Droopad, R., Yu, Z., Overgaard, C., Bowers, B., Abrokwah, J.

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Nonalloyed InGaAs/GaAs ohmic contacts for self-aligned ion implanted GaAs heterostructure field effect transistors von HUANG, J. H, ABROKWAH, J. K, OOMS, W. J

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High Mobility III-V MOSFETs For RF and Digital Applications von Passlack, M., Zlotnicka, A., Fejes, P., Hill, R.J.W., Moran, D.A.J., Li, X., Zhou, H., Macintyre, D., Thoms, S., Asenov, A., Kalna, K., Zurcher, P., Thayne, I.G., Rajagopalan, K., Droopad, R., Abrokwah, J., Tutt, M., Park, Y.-B., Johnson, E., Hartin, O.

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Anisotype-gate self-aligned p-channel heterostructure field-effect transistors von Abrokwah, J.K., Huang, J.-H., Ooms, W.J., Hallmark, J.A.

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NiZnAl-based p-type ohmic contacts on AlGaAs/InGaAs heterostructures von Abrokwah, J.K., Huang, J.H., Baker, J., Polito, T., Ooms, W.

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Optical measurement system for characterizing compound semiconductor interface and surface states von Passlack, M., Legge, R.N., Convey, D., Zhiyi Yu, Abrokwah, J.K.

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