1-μm enhancement mode GaAs N-channel MOSFETs with transconductance exceeding 250 mS/mm von RAJAGOPALAN, K, DROOPAD, R, ABROKWAH, J, ZURCHER, P, FEJES, P, PASSLACK, M

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Compound semiconductor MOSFETs von Droopad, R., Rajagopalan, K., Abrokwah, J., Zurcher, P., Passlack, M.

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Social Health Insurance and the Use of Formal and Informal Care in Developing Countries: Evidence from Ghana's National Health Insurance Scheme von Abrokwah, Stephen O., Callison, Kevin, Meyer, Donald J.

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Enhancement-Mode GaAs n-Channel MOSFET von Rajagopalan, K., Abrokwah, J., Droopad, R., Passlack, M.

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Implant-free high-mobility flatband MOSFET: principles of operation von Passlack, M., Rajagopalan, K., Abrokwah, J., Droopad, R.

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Growth and physical properties of Ga2O3 thin films on GaAs(001) substrate by molecular-beam epitaxy von Yu, Z., Overgaard, C. D., Droopad, R., Passlack, M., Abrokwah, J. K.

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Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor von Passlack, M., Abrokwah, J.K., Droopad, R., Zhiyi Yu, Overgaard, C., Sang In Yi, Hale, M., Sexton, J., Kummel, A.C.

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Gate dielectrics on compound semiconductors von Droopad, R., Passlack, M., England, N., Rajagopalan, K., Abrokwah, J., Kummel, A.

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Compact Harmonic Filter Design and Fabrication Using IPD Technology von Lianjun Liu, Shun-Meen Kuo, Abrokwah, J., Ray, M., Maurer, D., Miller, M.

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Low damage ashing and etching processes for ion implanted resist and Si3N4 removal by ICP and RIE methods von Li, X., Zhou, H., Abrokwah, J., Zurcher, P., Rajagopalan, K., Liu, W., Gregory, R., Passlack, M., Thayne, I.G.

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High mobility NMOSFET structure with high-/spl kappa/ dielectric von Passlack, M., Droopad, R., Rajagopalan, K., Abrokwah, J., Gregory, R., Nguyen, D.

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False aneurysm of the thyrocervical trunk: An unconventional surgical approach von Abrokwah, J., Shenoy, K.N., Armour, R.H.

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Thermally induced oxide crystallinity and interface destruction in Ga2O3–GaAs structures von Passlack, M., Abrokwah, J. K., Yu, Z., Droopad, R., Overgaard, C., Kawayoshi, H.

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High mobility NMOSFET structure with high-κ dielectric von PASSLACK, Matthias, DROOPAD, Ravi, RAJAGOPALAN, Karthik, ABROKWAH, Jonathan, GREGORY, Rich, NGUYEN, Danh

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Morphology of Ruptured Abdominal Aortic Aneurysms von Golledge, J., Abrokwah, J., Shenoy, K.N., Armour, R.H.

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New mechanism of gate current in heterostructure insulated gate field-effect transistors von Jun Ho Baek, Shur, M., Daniels, R.R., Arch, D.K., Abrokwah, J.K., Tufte, O.N.

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Experimental observation of velocity overshoot in n-channel AlGaAs/InGaAs/GaAs enhancement mode MODFETs von Passlack, M., Abrokwah, J.K., Lucero, R.

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Statistical investigation of dielectric breakdown of strontium bismuth tantalate thin film capacitors von Finder, J., Melnick, B. M., Abrokwah, J., Ooms, B.

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1-[mu]m Enhancement Mode GaAs N-Channel MOSFETs With Transconductance Exceeding 250 mS/mm von Rajagopalan, K, Droopad, R, Abrokwah, J, Zurcher, P, Fejes, P, Passlack, M

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1- \mu\hbox Enhancement Mode GaAs N-Channel MOSFETs With Transconductance Exceeding 250 mS/mm von Rajagopalan, K., Droopad, R., Abrokwah, J., Zurcher, P., Fejes, P., Passlack, M.

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