Indication of ferromagnetism in molecular-beam-epitaxy-derived N-type GaMnN von Overberg, Mark E., Abernathy, Cammy R., Pearton, Stephen J., Theodoropoulou, Nikoleta A., McCarthy, Kevin T., Hebard, Arthur F.

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Wide Bandgap Semiconductor Nanorod and Thin Film Gas Sensors von Kang, Byoung Sam, Wang, Hung-Ta, Tien, Li- Chia, Ren, Fan, Gila, Brent P., Norton, David P., Abernathy, Cammy R., Lin, Jenshan, Pearton, Stepehn J.

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Gallium Nitride Processing for Electronics, Sensors and Spintronics von Pearton, Stephen J, Abernathy, Cammy R, Ren, Fan

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Growth of (SmxGa1−x)2O3 by molecular beam epitaxy von Stewart, Anthony D., Gila, Brent P., Abernathy, Cammy R., Pearton, S. J.

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Growth and characterization of (Sc2O3)x(Ga2O3)1−x by molecular beam epitaxy von Hlad, Mark S., Gila, Brent P., Abernathy, Cammy R., Ren, Fan, Pearton, S. J.

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Chemical/surface mechanistic considerations in the design of novel precursors for metalorganic molecular beam epitaxy von Bohling, David A., Abernathy, Cammy R., Jensen, Klavs F.

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Effect of pH on the production of chalcopyrite CuInSe2 prepared by spray pyrolysis von BATES, C. W. JR, UEKITA, M, NELSON, K. F, ABERNATHY, C. R, MOONEY, J. B

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Magnetic properties of P-type GaMnP grown by molecular-beam epitaxy von Overberg, Mark E., Gila, Brent P., Abernathy, Cammy R., Pearton, Stephen J., Theodoropoulou, Nikoleta A., McCarthy, Kevin T., Arnason, Stephen B., Hebard, Arthur F.

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Effect of carbon doping on GaN:Er von Overberg, Mark, Abernathy, Cammy R., MacKenzie, J.Devin, Pearton, Stephen J., Wilson, Robert G., Zavada, John M.

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Characterization and annealing of Eu-doped GaN von Overberg, Mark, Lee, K.N., Abernathy, Cammy R., Pearton, Stephen J., Hobson, W.S., Wilson, Robert G., Zavada, John M.

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Defect Trapping and Annealing for Transition Metal Implants in Group III Nitrides von Lorenz, K, Vianden, R, Pearton, S J, Abernathy, Cammy R, Zavada, J M

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AlGaN/GaN-based diodes and gateless HEMTs for gas and chemical sensing von Kang, B.S., Suku Kim, Ren, F., Gila, B.P., Abernathy, C.R., Pearton, S.J.

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Production of single phase chalcopyrite CuInSe2 by spray pyrolysis von ABERNATHY, C. R, BATES, C. W. JR, ANANI, A. A, HABA, B, SMESTAD, G

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300°C GaN/AlGaN Heterojunction Bipolar Transistor von Ren, Fan, Abernathy, Cammy R., Van Hove, J. M., Chow, P. P., Hickman, R., Klaasen, JJ, Kopf, R. F., Cho, Hyun, Jung, K. B., La Roche, J. R., Wilson, R. G., Han, J., Shul, R. J., Baca, A. G., Pearton, S.J.

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Kinetic effects in film formation of CuInSe2 prepared by chemical spray pyrolysis von ABERNATHY, C. R, BATES, C. W. JR, ANANI, A. A, BELGACEM HABA

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(Electronics and Photonics Division Award) Dielectrics for III-V Materials von Abernathy, Dean Cammy R.

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Nitride-based Ohmic and Schottky Contacts to GaN von Voss, Lars F., Stafford, Luc, Wright, Jonathan, Gila, Brent, Abernathy, Cammy R., Pearton, Steve, Ren, Fan, Kravchenko, Ivan I.

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Ferromagnetic Properties of GaGdN Co-Doped with Si von Hite, Jennifer, Frazier, Rachel M., Davies, Ryan P., Thaler, Gerald T., Abernathy, Cammy R., Pearton, Steve J., Zavada, John M.

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Dry etching of GaN and related materials: comparison of techniques von Jewon Lee, Hyun Cho, Hays, D.C., Abernathy, C.R., Pearton, S.J., Shul, R.J., Vawter, G.A., Han, J.

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Oxide Dielectrics for Reliable Passivation of AlGaN/GaN HEMTs and Insulated Gates von Gila, Brent, Hlad, Mark, Anderson, Travis, Chen, Jau-Jiun, Allums, Kimberly, Gerger, Andrew, Herrero, Andrew, Jang, Soohwan, Kang, B.S., Abernathy, Cammy R., Ren, F., Pearton, Steve J.

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