HfB2 and Hf-B-N hard coatings by chemical vapor deposition von JAYARAMAN, S, GERBI, J. E, YANG, Y, KIM, D. Y, CHATTERJEE, A, BELLON, P, GIROLAMI, G. S, CHEVALIER, J. P, ABELSON, J. R

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Tribological behavior of hafnium diboride thin films von Chatterjee, A., Jayaraman, S., Gerbi, J.E., Kumar, N., Abelson, J.R., Bellon, P., Polycarpou, A.A., Chevalier, J.P.

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Field-directed sputter sharpening for tailored probe materials and atomic-scale lithography von Schmucker, S.W., Kumar, N., Abelson, J.R., Daly, S.R., Girolami, G.S., Bischof, M.R., Jaeger, D.L., Reidy, R.F., Gorman, B.P., Alexander, J., Ballard, J.B., Randall, J.N., Lyding, J.W.

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Anomalously high thermal conductivity of amorphous Si deposited by hot-wire chemical vapor deposition von Yang, Ho-Soon, Cahill, David G., Liu, X., Feldman, J. L., Crandall, R. S., Sperling, B. A., Abelson, J. R.

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Growth Inhibitor To Homogenize Nucleation and Obtain Smooth HfB2 Thin Films by Chemical Vapor Deposition von Babar, S, Kumar, N, Zhang, P, Abelson, J. R, Dunbar, A. C, Daly, S. R, Girolami, G. S

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Improved transparent conductive oxide/p +/i junction in amorphous silicon solar cells by tailored hydrogen flux during growth von Nuruddin, A., Abelson, J.R.

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Absence of an abrupt phase change from polycrystalline to amorphous in silicon with deposition temperature von Voyles, P M, Gerbi, J E, Treacy, M M, Gibson, J M, Abelson, J R

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Deposition of microcrystalline silicon: Direct evidence for hydrogen-induced surface mobility of Si adspecies von Gerbi, J. E., Abelson, J. R.

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Plasma deposition of hydrogenated amorphous silicon: Studies of the growth surface von Abelson, J. R.

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Low-Temperature Polycrystalline Silicon Thin-Film Transistors and Circuits on Flexible Substrates von van der Wilt, P.C., Kane, M.G., Limanov, A.B., Firester, A.H., Goodman, L., Lee, J., Abelson, J.R., Chitu, A.M., Im, James S.

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Hydrogen-induced modification of the medium-range structural order in amorphous silicon films von Nittala, L. N., Jayaraman, S., Sperling, B. A., Abelson, J. R.

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Conformal growth of low friction HfBxCy hard coatings von Mohimi, E., Ozkan, T., Babar, S., Polycarpou, A.A., Abelson, J.R.

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Structural disorder induced in hydrogenated amorphous silicon by light soaking von Gibson, J. M., Treacy, M. M. J., Voyles, P. M., Jin, H-C., Abelson, J. R.

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Advantages of the “optical cavity substrate” for real time infrared spectroscopy of plasma–surface interactions von von Keudell, A., Abelson, J. R.

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Highly conformal film growth by chemical vapor deposition. I. A conformal zone diagram based on kinetics von Yanguas-Gil, A., Yang, Y., Kumar, N., Abelson, J. R.

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Highly conformal film growth by chemical vapor deposition. II. Conformality enhancement through growth inhibition von Yanguas-Gil, A., Kumar, N., Yang, Y., Abelson, J. R.

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An amorphous silicon thin film transistor fabricated at 125 °C by dc reactive magnetron sputtering von McCormick, C. S., Weber, C. E., Abelson, J. R., Gates, S. M.

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Dependence of the saturated light-induced defect density on macroscopic properties of hydrogenated amorphous silicon von PARK, H. R, LIU, J. Z, CABARROCAS, P. R, MARUYAMA, A, ISOMURA, M, WAGNER, S, ABELSON, J. R, FINGER, F

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Hydrogen-surface reactions during the growth of hydrogenated amorphous silicon by reactive magnetron sputtering: A real time kinetic study by in situ infrared absorption von Katiyar, M., Yang, Y. H., Abelson, J. R.

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Unexpected short- and medium-range atomic structure of sputtered amorphous silicon upon thermal annealing von Haberl, B., Bogle, S. N., Li, T., McKerracher, I., Ruffell, S., Munroe, P., Williams, J. S., Abelson, J. R., Bradby, J. E.

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