MICROWAVE METHOD FOR DETERMINATION OF DIELECTRIC PROPERTIES OF LIQUIDS von N. A. Pevneva, A. V. Gusinskii, A. L. Gurskii

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Results of classic carotid endarterectomy using temporary carotid shunt von Mikhaĭlov, I V, Gusinskiĭ, A V, Drozhzhin, I G, Perrevalov, E A

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WAYS OF IMPROVEMENT OF LOOP ENDARTERECTOMY RESULTS FROM ILIAC-FEMORAL SEGMENT von Ivanov, A S, Maĭstrenko, D N, Generalov, M I, Zherebtsov, F K, Oleshchuk, A N, Granov, D A, Gusinskiĭ, A V, Mikhaĭlov, I V

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Submicron source of free electrons von Gusinskii, G. M., Baranova, L. A., Naidenov, V. O.

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Nickel field-emission microcathode: Art of fabrication, properties, and applications von Baranova, L.A., Baryshev, S.V., Gusinskii, G.M., Konnikov, S.G., Nashchekin, A.V.

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Study of CdTe etching process in alcoholic solutions of bromine von Kotina, I M, Tukhkonen, L M, Patsekina, G V, Shchukarev, A V, Gusinskii, G M

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Track technology for creating the arrays of nickel microtips, micronozzles, and microtubes von Gusinskii, G. M., Baryshev, S. V., Nashchekin, A. V., Sakseev, D. A., Naidenov, V. O., Konnikov, S. G.

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Formation of desired concentration profiles of embedded atoms and radiation-induced defects by using monochromatic fast ion beams von Gusinskii, G. M., Matyukov, A. V.

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A method for investigation of light-element distribution in the surface layers of semiconductors and dielectrics von Gusinskii, G M, Kudryavtsev, I V, Kudoyarova, V K, Naidenov, V O, Rassadin, L A

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Deep levels in the band gap of GaN layers irradiated with protons von Sobolev, M. M., Sobolev, N. A., Usikov, A. S., Shmidt, N. M., Yakimenko, A. N., Gusinskii, G. M., Naidenov, V. O.

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Strongly compensated InAs obtained by proton irradiation von Zotova, N. V., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Voronova, N. A., Gusinskii, G. M., Naidenov, V. O.

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Nuclear methods in technology of Si:Er structures von Naidenov, V.O., Sobolev, N.A., Alexandrov, O.B., Bresler, M.S., Gusev, O.V., Gusinskii, G.M., Shek, E.I., Makaviichuk, M.I., Parshin, E.O.

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Influence of oxygen on the photoluminescence intensity of erbium (at 1.54 µm) in erbium-doped a-Si:H films von Kudoyarova, V. Kh, Kuznetsov, A. N., Terukov, E. I., Gusev, O. B., Kudryavtsev, Yu. A., Ber, B. Ya, Gusinskii, G. M., Fuhs, W., Weiser, G., Kuehne, H.

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Visualization of the ion projected range region in GaAs irradiated with argon ions von Busov, V. M., Venus, G. B., Gusinskii, G. M., Il’inskaya, N. D., Naidenov, V. O., Pasternak, A. A., Portnoi, E. L., Troshkov, S. I.

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Low-temperature photoluminescence of heavy-ion-implanted InGaP solid solutions von Bhattachar-yya, D., Vinokurov, D. A., Gusinskii, G. M., Elyukhin, V. A., Kovalenkov, O. V., Kyutt, R. N., Marsh, J. H., Naidenov, V. O., Portnoi, E. L.

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Defect Engineering in Erbium-Doped Silicon Structure Technology von Gusinskii, G.M., Alexandrov, O.V., Stepanov, V.I., Troshina, E.P., Vyzhigin, Yu.V., Sheck, E.I., Gresserov, B.N., Sobolev, N.A., Chepik, L.F., Naidenov, V.O.

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Study of CdTe etching process in alcoholic solutions of bromine von KOTINA, I. M, TUKHKONEN, L. M, PATSEKINA, G. V, SHCHUKAREV, A. V, GUSINSKII, G. M

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A Study of hole Scattering in Ge by Cyclotron Resonance von Gershenson, E. M., Gusinskii, E. N., Rabinovich, R. I., Soina, N. V.

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Determination of the size of micropores in nuclear microfilters with small diameter von Gusinskii, G. M., Kremer, E. B., Kremer, M. I., Mchedlishvili, B. V.

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