Propagation of THz acoustic wave packets in GaN at room temperature von Maznev, A. A., Hung, T.-C., Yao, Y.-T., Chou, T.-H., Gandhi, J. S., Lindsay, L., Shin, H. D., Stokes, D. W., Forrest, R. L., Bensaoula, A., Sun, C.-K., Nelson, K. A.

Volltext

A photoluminescence study of plasma reactive ion etching-induced damage in GaN von Mouffak, Z., Bensaoula, A., Trombetta, L.

Volltext

Enhancement of adhesive joint strength by laser surface modification von Baburaj, E.G., Starikov, D., Evans, J., Shafeev, G.A., Bensaoula, A.

Volltext

Effect of N2 and N on GaN nanocolumns grown on Si(111) by molecular beam epitaxy von Debnath, A., Gandhi, J. S., Kesaria, M., Pillai, R., Starikov, D., Bensaoula, A.

Volltext

Dynamic range and sensitivity of field emission pressure sensors with non-silicon membranes von Badi, N., Bensaoula, A., Nair, A.M.

Volltext

GaN nanorod arrays as a high-stability field emitter von Seo, H. W., Tu, L. W., Chen, M., Chen, Q. Y., Bensaoula, A., Wang, X. M., Chu, W. K.

Volltext

Quantitative depth profile analysis of boron implanted silicon by pulsed radiofrequency glow discharge time-of-flight mass spectrometry von Pisonero, J., Lobo, L., Bordel, N., Tempez, A., Bensaoula, A., Badi, N., Sanz-Medel, A.

Volltext

Determination of optical constants and stoichiometry of BxOyNz films deposited by ECR-PVD von Badi, N., Morales, M., Boney, C., Bensaoula, A., Zomorrodian, A.

Volltext

Raman scattering by folded acoustic phonons in InGaN/GaN superlattices von Ibáñez, J., Rapaport, A., Boney, C., Oliva, R., Cuscó, R., Bensaoula, A., Artús, L.

Volltext

High-pressure Raman scattering in InGaN heteroepitaxial layers: Effect of the substrate on the phonon pressure coefficients von Oliva, R., Ibáñez, J., Cuscó, R., Dadgar, A., Krost, A., Gandhi, J., Bensaoula, A., Artús, L.

Volltext

The effects of nitrogen plasma on reactive-ion etching induced damage in GaN von Mouffak, Z., Bensaoula, A., Trombetta, L.

Volltext

Field emission pressure sensors with non-silicon membranes von Badi, N., Nair, A.M., Bensaoula, A.

Volltext

Gallium adlayer adsorption and desorption studies with real-time analysis by spectroscopic ellipsometry and RHEED on A-, M-, and C-plane GaN grown by PAMBE von Misra, P., Boney, C., Starikov, D., Bensaoula, A.

Volltext

Formation of carbon nitride films on Si(100) substrates by electron cyclotron resonance plasma assisted vapor deposition von Bousetta, A., Lu, M., Bensaoula, A., Schultz, A.

Volltext

Influence of HiPIMS pulse widths on the deposition behaviour and properties of CuAgZr compositionally graded films von Lapeyre, L., Wieczerzak, K., Hain, C., Metzger, J., Sharma, A., Bensaoula, A., Michler, J., Nelis, T.

Volltext

Multiphononon resonant Raman scattering in He+-implanted InGaN von Domènech-Amador, N, Cuscó, R, García-Hernansanz, R, González-Díaz, G, Gandhi, J, Bensaoula, A, Artús, L

Volltext

Visible emission from AlN doped with Eu and Tb ions von Jadwisienczak, W. M., Lozykowski, H. J., Berishev, I., Bensaoula, A., Brown, I. G.

Volltext

Growth and characterization of InGaN for photovoltaic devices von Boney, C., Hernandez, I., Pillai, R., Starikov, D., Bensaoula, A., Henini, M., Syperek, M., Misiewicz, J., Kudrawiec, R.

Volltext

Deep level transient spectroscopy characterisation of defects in AlGaN/Si dual-band (UV/IR) detectors grown by MBE von Aziz, M., Mari, R. H., Felix, J. F., Mesli, A., Taylor, D., Lemine, M. O., Henini, M., Pillai, R., Starikov, D., Boney, C., Bensaoula, A.

Volltext

Thermal Analysis of Micro-Column Arrays for Tailored Temperature Control in Space von Adjim, M, Pillai, R, Bensaoula, A, Starikov, D, Boney, C, Saidane, A

Volltext