Influence of Doping Engineering in 1 μm Drift Layer Quasi‐Vertical Fin Field‐Effect Transistor for Achieving >139 V Breakdown Voltage von Michel, Ancy, I. V., Binola K. Jebalin, Franklin, S. Angen, Juliet Rani, Sylvia, A., Angelin Delighta, Nirmal, D.

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A new Vertical C-shaped Silicon Channel Nanosheet FET with Stacked High-K Dielectrics for Low Power Applications von A, Angelin Delighta, I.V, Binola K Jebalin, Ajayan, J., Franklin, S. Angen, Nirmal, D.

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A comprehensive review of AlGaN/GaN High electron mobility transistors: Architectures and field plate techniques for high power/ high frequency applications von Raj Kumar, J.S., Victor Du John, H., I.V, Binola K Jebalin, Ajayan, J., Delighta A, Angelin, Nirmal, D.

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