Lead‐Free Highly Efficient Blue‐Emitting Cs3Cu2I5 with 0D Electronic Structure von Jun, Taehwan, Sim, Kihyung, Iimura, Soshi, Sasase, Masato, Kamioka, Hayato, Kim, Junghwan, Hosono, Hideo

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A Highly Efficient and Stable Blue‐Emitting Cs5Cu3Cl6I2 with a 1D Chain Structure von Li, Jiangwei, Inoshita, Takeshi, Ying, Tianping, Ooishi, Atsushi, Kim, Junghwan, Hosono, Hideo

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Material Design of p‐Type Transparent Amorphous Semiconductor, Cu–Sn–I von Jun, Taehwan, Kim, Junghwan, Sasase, Masato, Hosono, Hideo

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Transparent amorphous oxide semiconductors for organic electronics: Application to inverted OLEDs von Hosono, Hideo, Kim, Junghwan, Toda, Yoshitake, Kamiya, Toshio, Watanabe, Satoru

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Mobility–stability trade-off in oxide thin-film transistors von Shiah, Yu-Shien, Sim, Kihyung, Shi, Yuhao, Abe, Katsumi, Ueda, Shigenori, Sasase, Masato, Kim, Junghwan, Hosono, Hideo

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Unintended Carbon-Related Impurity and Negative Bias Instability in High-Mobility Oxide TFTs von Shiah, Yu-Shien, Sim, Kihyung, Ueda, Shigenori, Kim, Junghwan, Hosono, Hideo

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Approach to Low Contact Resistance Formation on Buried Interface in Oxide Thin-Film Transistors: Utilization of Palladium-Mediated Hydrogen Pathway von Shi, Yuhao, Tsuji, Masatake, Cho, Hanjun, Ueda, Shigenori, Kim, Junghwan, Hosono, Hideo

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Role of hydrogen-doping for compensating oxygen-defect in non-stoichiometric amorphous In2O3−x: Modeling with a machine-learning potential von Urata, Shingo, Nakamura, Nobuhiro, Kim, Junghwan, Hosono, Hideo

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Exploration of Stable Strontium Phosphide-Based Electrides: Theoretical Structure Prediction and Experimental Validation von Wang, Junjie, Hanzawa, Kota, Hiramatsu, Hidenori, Kim, Junghwan, Umezawa, Naoto, Iwanaka, Koki, Tada, Tomofumi, Hosono, Hideo

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Highly Dense and Stable p‑Type Thin-Film Transistor Based on Atomic Layer Deposition SnO Fabricated by Two-Step Crystallization von Kim, Hye-Mi, Choi, Su-Hwan, Jeong, Hyun Jun, Lee, Jung-Hoon, Kim, Junghwan, Park, Jin-Seong

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High-performance a-ITZO TFTs with high bias stability enabled by self-aligned passivation using a-GaOx von Shi, Yuhao, Shiah, Yu-Shien, Sim, Kihyung, Sasase, Masato, Kim, Junghwan, Hosono, Hideo

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Room-Temperature Solid-State Synthesis of Cs3Cu2I5 Thin Films and Formation Mechanism for Its Unique Local Structure von Tsuji, Masatake, Sasase, Masato, Iimura, Soshi, Kim, Junghwan, Hosono, Hideo

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Extremely Shallow Valence Band in Lanthanum Trihydride von Yamasaki, Tomoyuki, Iimura, Soshi, Kim, Junghwan, Hosono, Hideo

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Ultra-wide bandgap amorphous oxide semiconductors for NBIS-free thin-film transistors von Kim, Junghwan, Bang, Joonho, Nakamura, Nobuhiro, Hosono, Hideo

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Hole Concentration Reduction in CuI by Zn Substitution and its Mechanism: Toward Device Applications von Tsuji, Masatake, Iimura, Soshi, Kim, Junghwan, Hosono, Hideo

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Performance boosting strategy for perovskite light-emitting diodes von Sim, Kihyung, Jun, Taehwan, Bang, Joonho, Kamioka, Hayato, Kim, Junghwan, Hiramatsu, Hidenori, Hosono, Hideo

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18‐Crown‐6 Additive to Enhance Performance and Durability in Solution‐Processed Halide Perovskite Electronics von Sim, Kihyung, Nakao, Takuya, Sasase, Masato, Iimura, Soshi, Kim, Junghwan, Hosono, Hideo

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One-step solution synthesis of white-light-emitting films via dimensionality control of the Cs–Cu–I system von Jun, Taehwan, Handa, Taketo, Sim, Kihyung, Iimura, Soshi, Sasase, Masato, Kim, Junghwan, Kanemitsu, Yoshihiko, Hosono, Hideo

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Zeolitic Intermetallics: LnNiSi (Ln = La–Nd) von Mizoguchi, Hiroshi, Park, Sang-Won, Kishida, Kazuhisa, Kitano, Masaaki, Kim, Junghwan, Sasase, Masato, Honda, Takashi, Ikeda, Kazutaka, Otomo, Toshiya, Hosono, Hideo

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High-Performance Indium Gallium Tin Oxide Transistors with an Al2O3 Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 °C: Roles of Hydrogen and Excess... von Choi, Cheol Hee, Kim, Taikyu, Ueda, Shigenori, Shiah, Yu-Shien, Hosono, Hideo, Kim, Junghwan, Jeong, Jae Kyeong

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