Effect of a high temperature AlN buffer layer grown by initially alternating supply of ammonia on AIGaN/GaN heterostuctures von 段焕涛 郝跃 张进成

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The effects of vicinal sapphire substrates on the properties of AlGaN/GaN heterostructures von 许志豪 张进成 张忠芬 朱庆玮 段焕涛 郝跃

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Stress, structural and electrical properties of Si-doped GaN film grown by MOCVD von 许志豪 张进成 段焕涛 张忠芬 朱庆玮 徐浩 郝跃

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Characterization of GaN grown on 4H-SiC and sapphire by Raman spectroscopy and high resolution XRD von 段焕涛 谷文萍 张进成 郝跃 陈炽 倪金玉 许昇瑞

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Effects of the strain relaxation of an A1GaN barrier layer induced by various cap layers on the transport properties in A1GaN/GaN heterostructures von 刘子扬 张进成 段焕涛 薛军帅 林志宇 马俊彩 薛晓咏 郝跃

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Effects of the strain relaxation of an AlGaN barrier layer induced by various cap layers on the transport properties in AlGaN/GaN heterostructures von Liu, Zi-Yang (子扬 刘), Zhang, Jin-Cheng (进成 张), Duan, Huan-Tao (焕涛 段), Xue, Jun-Shuai (军帅 薛), Lin, Zhi-Yu (志宇 林), Ma, Jun-Cai (俊彩 马), Xue, Xiao-Yong (晓咏 薛), Hao, Yue (跃郝)

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