Effects of a carbon implant on thermal stability of Ni0.95（Pt0.05）Si von 冯帅 赵利川 张青竹 杨鹏鹏 唐兆云 闫江 吴次南

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A simulation analysis of performance of both implanted doping and in situ doping ETSOI PMOSFETs von 冯帅 赵利川 张青竹 杨鹏鹏 唐兆云 吴次南 闫江

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Effects of a carbon implant on thermal stability of Ni0.95(Pt0.05)Si von Feng, Shuai, Zhao, Lichuan, Zhang, Qingzhu, Yang, Pengpeng, Tang, Zhaoyun, Yan, Jiang, Wu, Cinan

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A simulation analysis of performance of both implanted doping and in situ doping ETSOI PMOSFETsProject supported by the Institute of Microelectronics, Chinese Academy of Sciences von Feng, Shuai, Zhao, Lichuan, Zhang, Qingzhu, Yang, Pengpeng, Tang, Zhaoyun, Wu, Cinan, Yan, Jiang

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