Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers von 仵乐娟 李述体 刘超 王海龙 卢太平 张康 肖国伟 周玉刚 尹以安 杨孝东

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The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer von Lu, Tai-Ping (太平 卢), Li, Shu-Ti (述体 李), Zhang, Kang (康张), Liu, Chao (超刘), Xiao, Guo-Wei (国伟 肖), Zhou, Yu-Gang (玉刚 周), Zheng, Shu-Wen (树文 郑), Yin, Yi-An (以安 尹), Wu, Le-Juan (乐娟 仵), Wang, Hai-Long (海龙 王), Yang, Xiao-Dong (孝东 杨)

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Blue InGaN light-emitting diodes with dip-shaped quantum wells von Lu, Tai-Ping (太平 卢), Li, Shu-Ti (述体 李), Zhang, Kang (康张), Liu, Chao (超刘), Xiao, Guo-Wei (国伟 肖), Zhou, Yu-Gang (玉刚 周), Zheng, Shu-Wen (树文 郑), Yin, Yi-An (以安 尹), Wu, Le-Juan (乐娟 仵), Wang, Hai-Long (海龙 王), Yang, Xiao-Dong (孝东 杨)

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