Chemical bonding of nitrogen formed by nitridation of crystalline and amorphous aluminum oxide studied by X-ray photoelectron spectroscopy von Lawniczak-Jablonska, K, Zytkiewicz, Z. R, Gieraltowska, S, Sobanska, M, Kuzmiuk, P, Klosek, K

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Influence of substrate nitridation temperature on epitaxial alignment of GaN nanowires to Si(111) substrate von Wierzbicka, A, Zytkiewicz, Z R, Kret, S, Borysiuk, J, Dluzewski, P, Sobanska, M, Klosek, K, Reszka, A, Tchutchulashvili, G, Cabaj, A, Lusakowska, E

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Kinetics of self-induced nucleation and optical properties of GaN nanowires grown by plasma-assisted molecular beam epitaxy on amorphous AlxOy von Sobanska, M., Korona, K. P., Zytkiewicz, Z. R., Klosek, K., Tchutchulashvili, G.

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Growth by molecular beam epitaxy and properties of inclined GaN nanowires on Si(001) substrate von Borysiuk, J, Zytkiewicz, Z R, Sobanska, M, Wierzbicka, A, Klosek, K, Korona, K P, Perkowska, P S, Reszka, A

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Laterally overgrown structures as substrates for lattice mismatched epitaxy von Zytkiewicz, Z.R

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Comprehensive analysis of the self-assembled formation of GaN nanowires on amorphous AlxOy: in situ quadrupole mass spectrometry studies von Sobanska, M, Zytkiewicz, Z R, Calabrese, G, Geelhaar, L, Fernández-Garrido, S

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Analysis of Incubation Times for the Self-Induced Formation of GaN Nanowires: Influence of the Substrate on the Nucleation Mechanism von Sobanska, M, Dubrovskii, V. G, Tchutchulashvili, G, Klosek, K, Zytkiewicz, Z. R

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Comprehensive analysis of the self-assembled formation of GaN nanowires on amorphous Al x O y : in situ quadrupole mass spectrometry studies von Sobanska, M, Zytkiewicz, Z R, Calabrese, G, Geelhaar, L, Fernández-Garrido, S

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Surface Diffusion of Gallium as the Origin of Inhomogeneity in Selective Area Growth of GaN Nanowires on Al x O y Nucleation Stripes von Sobanska, M, Zytkiewicz, Z. R, Ekielski, M, Klosek, K, Sokolovskii, A. S, Dubrovskii, V. G

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Compositionally Graded AlGaN Nanostructures: Strain Distribution and X‑ray Diffraction Reciprocal Space Mapping von Stanchu, H, Auf der Maur, M, Kuchuk, A. V, Mazur, Yu. I, Sobanska, M, Zytkiewicz, Z. R, Wu, S, Wang, Z, Salamo, G

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Self-assembled growth of GaN nanowires on amorphous AlxOy: from nucleation to the formation of dense nanowire ensembles von Sobanska, M, Fernández-Garrido, S, Zytkiewicz, Z R, Tchutchulashvili, G, Gieraltowska, S, Brandt, O, Geelhaar, L

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Optimization of nitrogen plasma source parameters by measurements of emitted light intensity for growth of GaN by molecular beam epitaxy von Klosek, K., Sobanska, M., Tchutchulashvili, G., Zytkiewicz, Z.R., Teisseyre, H., Klopotowski, L.

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High-temperature ultraviolet detection based on surface photovoltage effect in SiN passivated n-GaN films von Matys, M., Adamowicz, B., Zytkiewicz, Z. R., Taube, A., Kruszka, R., Piotrowska, A.

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Engineering of electric field distribution in GaN(cap)/AlGaN/GaN heterostructures: theoretical and experimental studies von Gladysiewicz, M, Janicki, L, Misiewicz, J, Sobanska, M, Klosek, K, Zytkiewicz, Z R, Kudrawiec, R

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Arrangement of GaN nanowires grown by plasma-assisted molecular beam epitaxy on silicon substrates with amorphous Al2O3 buffers von Sobanska, M., Wierzbicka, A., Klosek, K., Borysiuk, J., Tchutchulashvili, G., Gieraltowska, S., Zytkiewicz, Z.R.

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Dynamics of stacking faults luminescence in GaN/Si nanowires von Korona, K.P., Reszka, A., Sobanska, M., Perkowska, P.S., Wysmołek, A., Klosek, K., Zytkiewicz, Z.R.

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Reflectance and fast polarization dynamics of a GaN/Si nanowire ensemble von Korona, K P, Zytkiewicz, Z R, Sobanska, M, Sosada, F E, Dró d, P A, Klosek, K, Tchutchulashvili, G

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Surface-enhanced Raman scattering of graphene caused by self-induced nanogating by GaN nanowire array von Kierdaszuk, J., Kaźmierczak, P., Bożek, R., Grzonka, J., Krajewska, A., Zytkiewicz, Z.R., Sobanska, M., Klosek, K., Wołoś, A., Kamińska, M., Wysmołek, A., Drabińska, A.

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Structural, electrical, and optical characterization of coalescent p-n GaN nanowires grown by molecular beam epitaxy von Kolkovsky, Vl, Zytkiewicz, Z. R., Korona, K. P., Sobanska, M., Klosek, K.

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A model for epitaxial lateral overgrowth of GaAs by liquid-phase electroepitaxy von Liu, Y.C., Zytkiewicz, Z.R., Dost, S.

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