Experimental analysis of the electric field distribution in semi-insulating GaAs detectors via alpha particles von Kurucova, N., Šagátová, A., Pavlovič, M., Zaťko, B., Kováčová, E., Boháček, P., Škriniarová, J., Predanocy, M.

Volltext

Investigation of the AZ 5214E photoresist by the laser interference, EBDW and NSOM lithographies von Škriniarová, J., Pudiš, D., Andok, R., Lettrichová, I., Uherek, F.

Volltext

Investigation of volume fraction of GaP nanowires by SEM characterization and spectroscopic ellipsometry von Škriniarová, J., Hronec, P., Chlpík, J., Laurenčíková, A., Kováč, J., Novák, J., Andok, R.

Volltext

Plasmonic behaviour of sputtered Au nanoisland arrays von Tvarožek, V., Szabó, O., Novotný, I., Kováčová, S., Škriniarová, J., Šutta, P.

Volltext

Study of ZnO nanostructures grown by a hydrothermal process on GaP/ZnO nanowires von Kováč, J., Hronec, P., Búc, D., Škriniarová, J., Šutta, P., Kováč, J., Novák, J.

Volltext

Structural, electrical and optical properties of ZnO/Si structures prepared by sputtering or pulsed laser deposition von Škriniarová, J, Kovác, J, Haško, D, Vincze, A, Jakabovic, J, Jánoš, L, Veselý, M, Novotný, I, Bruncko, J

Volltext

Electrical and Optical Characterization of Ni/Al0.3Ga0.7N/GaN Schottky Barrier Diodes von Kordoš, P., Škriniarová, J., Chvála, A., Florovič, M., Kováč, J., Donoval, D.

Volltext

Comparative study of electrical properties of nano to polycrystalline diamond films von Vojs, M, Kromka, A, Ižák, T, Škriniarová, J, Novotný, I, Valent, P, Michalka, M, Kováčik, T, Veselý, M

Volltext

Standard AZ 5214E photoresist in laser interference and EBDW lithographies von Škriniarová, J., Andok, R., Pudiš, D., Benčurová, A., Nemec, P., Šušlik, L.

Volltext

Proposal and performance analysis of normally off n++ GaN/InAlN/AlN/GaN HEMTs with 1-nm-thick InAlN barrier von Kuzmik, J., Ostermaier, C., Pozzovivo, G., Basnar, B., Schrenk, W., Carlin, J.F., Gonschorek, M., Feltin, E., Grandjean, N., Douvry, Y., Gaquière, Christophe, de Jaeger, Jean-Claude, Cico, K., Frölich, K., Skriniarova, J., Kovacs, J., Strasser, G., Pogany, D., Gornik, E.

Volltext

Impact of SF6 plasma treatment on performance of AlGaN/GaN HEMT von Vanko, G., Lalinský, T., Haščík, Š., Rýger, I., Mozolová, Ž., Škriniarová, J., Tomáška, M., Kostič, I., Vincze, A.

Volltext

Light extraction from a light emitting diode with photonic structure in the surface layer investigated by NSOM von Pudis, D, [Utilde]uslik, L', [Utilde]kriniarova, J, KovaAe, J, MartinAeek, I, HasAeik, [Utilde], Kubicova, I, Novak, J, Vesely, M

Volltext

Properties of MOVPE GaN grown on ZnO deposited on Si(0 0 1) and Si(1 1 1) substrates von Paszkiewicz, R., Paszkiewicz, B., Wosko, M., Szyszka, A., Marciniak, L., Prażmowska, J., Macherzyński, W., Serafińczuk, J., Kozłowski, J., Tlaczala, M., Kováč, J., Novotný, I., Škriniarová, J., Haško, D.

Volltext

Proposal and Performance Analysis of Normally Off \hbox^ GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier von Kuzmik, J, Ostermaier, C, Pozzovivo, G, Basnar, B, Schrenk, W, Carlin, J.-F, Gonschorek, M, Feltin, E, Grandjean, N, Douvry, Y, Gaquière, C, De Jaeger, J.-C, Čičo, K, Fröhlich, K, Škriniarová, J, Kováč, J, Strasser, G, Pogany, D, Gornik, E

Volltext

Technology and performance of 150nm gate length InGaP/InGaAs/GaAs pHEMTs von Lalinský, T, Škriniarová, J, Kuzmı́k, J, Hasenöhrl, S, Fox, A, Tomáška, M, Mozolová, Ž, Kovac̆ik, T, Krajcer, A, Kordoš, P

Volltext

Surface modification of doped ZnO thin films von Flickyngerova, S., Skriniarova, J., Netrvalova, M., Kovac, J., Novotny, I., Sutta, P., Tvarozek, V.

Volltext

Technology and performance of 150 nm gate length InGaP/InGaAs/GaAs pHEMTs von Lalinský, T, Škriniarová, J, Kuzmı́k, J, Hasenöhrl, S, Fox, A, Tomáška, M, Mozolová, Ž, Kovac̆ik, T, Krajcer, A, Kordoš, P

Volltext

Mechanically fixed and thermally insulated micromechanical structures for GaAs heterostructure based MEMS devices von Lalinsky´, T, Haš ík, S, Mozolová, ., Burian, E, Krná, M, Tomáška, M, Škriniarová, J, Drz ík, M, Kostic, I, Matay, L

Volltext

Impact of SF 6 plasma treatment on performance of AlGaN/GaN HEMT von Vanko, G., Lalinský, T., Haščík, Š., Rýger, I., Mozolová, Ž., Škriniarová, J., Tomáška, M., Kostič, I., Vincze, A.

Volltext

InGaAs/InGaP HEMTs: technological optimization and analytical modelling von Kuzmı&#x0301, k, J., Hasenöhrl, S., Kúdela, R., Haščı&#x0301, k, Š., Mozolová, Ž., Lalinský, T., Vogrinčič, P., Breza, J., Škriniarová, J., Fox, A., Kordoš, P.

Volltext