Experimental analysis of the electric field distribution in semi-insulating GaAs detectors via alpha particles von Kurucova, N., Šagátová, A., Pavlovič, M., Zaťko, B., Kováčová, E., Boháček, P., Škriniarová, J., Predanocy, M.

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Imaging and spectrometric performance of SiC Timepix3 radiation camera von Zaťko, B., Šagátová, A., Hrubčín, L., Kováčová, E., Novák, A., Kurucová, N., Polansky, Š., Jakůbek, J.

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From a single silicon carbide detector to pixelated structure for radiation imaging camera von Zat'ko, B., Šagátová, A., Gál, N., Novák, A., Osvald, J., Boháček, P., Polansky, Š., Jakůbek, J., Kováčová, E.

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Radiation hardness study of the ePix100 sensor and ASIC under direct illumination at the European XFEL von Klačková, I., Ahmed, K., Blaj, G., Cascella, M., Cerantola, V., Chang, C., Dragone, A., Göde, S., Hauf, S., Kenney, C., Segal, J., Kuster, M., Šagátová, A.

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Study of the contrast resolution of Timepix detector with a semi-insulating GaAs sensor von Zatko, B., Sagatova, A., Zaprazny, Z., Bohacek, P., Sekacova, M., Kovacova, E., Zemlicka, J., Jakubek, J., Korytar, D., Gal, N., Necas, V.

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Performance of bulk semi-insulating GaAs-based sensor and its comparison to Si-based sensor for Timepix radiation camera von Kubanda, D., Zaťko, B., Šagátová, A., Žemlička, J., Zápražný, Z., Boháček, P., Dudák, J., Kováčová, E., Nečas, V.

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Imaging performance of a Timepix detector based on semi-insulating GaAs von Zaťko, B., Zápražný, Z., Jakůbek, J., Šagátová, A., Boháček, P., Sekáčová, M., Korytár, D., Nečas, V., Žemlička, J., Mora, Y., Pichotka, M.

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Radiation hardness study of semi-insulating GaAs detectors against 5 MeV electrons von Šagátová, A., Zaťko, B., Nečas, V., Sedlačková, K., Boháček, P., Fülöp, M., Pavlovič, M.

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Schottky barrier detectors based on high quality 4H-SiC semiconductor: Electrical and detection properties von Zaťko, B., Hrubčín, L., Šagátová, A., Osvald, J., Boháček, P., Zápražný, Z., Sedlačková, K., Sekáčová, M., Dubecký, F., Skuratov, V.A., Korytár, D., Nečas, V.

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First tests of Timepix detectors based on semi-insulating GaAs matrix of different pixel size von Zaťko, B., Kubanda, D., Žemlička, J., Šagátová, A., Zápražný, Z., Boháček, P., Nečas, V., Mora, Y., Pichotka, M., Dudák, J.

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Radiation detector based on 4H-SiC used for thermal neutron detection von Zaťko, B., Šagátová, A., Sedlačková, K., Boháček, P., Sekáčová, M., Kohout, Z., Granja, C., Nečas, V.

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Semi-insulating GaAs detectors optimized for fast neutron detection von Sagatova, A, Zat'ko, B, Sedlackova, K, Necas, V, Dubecky, F, Bohacek, P, Chodak, I

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Radiation hardness limits in gamma spectrometry of semi-insulating GaAs detectors irradiated by 5 MeV electrons von Sagatova, A., Zatko, B., Necas, V., Fulop, M.

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Strategies to Better Target Fungal Squalene Monooxygenase von Sagatova, Alia A.

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Structural and Functional Elucidation of Yeast Lanosterol 14α-Demethylase in Complex with Agrochemical Antifungals von Tyndall, Joel D A, Sabherwal, Manya, Sagatova, Alia A, Keniya, Mikhail V, Negroni, Jacopo, Wilson, Rajni K, Woods, Matthew A, Tietjen, Klaus, Monk, Brian C

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Spreading of an active region of semi-insulating GaAs detectors after radiation degradation von Sagatova, A., Kurucova, N., Necas, V., Kovacova, E., Zatko, B.

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High resolution alpha particle detectors based on 4H-SiC epitaxial layer von Zat'ko, B., Dubecký, F., Šagátová, A., Sedlačová, K., Ryć, L.

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Spectral tracking of proton beams by the Timepix3 detector with GaAs, CdTe and Si sensors von Novak, A., Granja, C., Sagatova, A., Zach, V., Stursa, J., Oancea, C.

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Semi-insulating GaAs detectors degraded by 8 MeV electrons up to 1500 kGy von Sagatova, A., Krsjak, V., Sojak, S., Riabukhin, O., Kovacova, E., Zatko, B.

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GaAs radiation-degraded detectors: gamma spectrometry at lowered temperatures von Sagatova, A., Gal, N., Novak, A., Kotorova, S., Riabukhin, O., Kovacova, E., Zatko, B.

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